外延的

The relaxing ability of atoms in epilayer is also important in the formation of Moiré structure, which can be related to the bulk modulus of epilayer.

外延岛的面内弛豫行为与外延层和基体之间的相对刚度有关，弹性模量较大的外延层具有较强的延展能力，对Moir 结构的形成有利。

The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

用X射线衍射方法通过不同晶面的ω扫描测试，分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。

The tea art extension is bigger than the sado, its extension is situated between the sado and the tea culture.

茶艺的外延大于茶道，其外延介于茶道和茶文化之间。

We have epitaxially grown ultrathin Pb and Co films on the Cu(111)surface bymolecular beam exitaxialgrowth technique,and studied in detail the growthand surface alloying of submonolayer Pb on Cu(111),the shift of Pb 5d core levelbinding energy on Cu(111),the surfactant-assisted epitaxial growth of Co on Cu(111)using Pb as a surfactant,and the spin exchange splitting of ultrathin Co films onCu(111)using synchron radiation photoemission spectra as well as Auger electronspectraand low energy electron diffraction.

利用分子束外延生长技术在单晶Cu(111)表面外延生长了超薄Pb和Co膜，并利用同步辐射光电子发射谱，结合俄歇谱和低能电子衍射，详细研究了超薄Pb在Cu(111)表面的生长、表面合金化，Cu(111)表面Pb的5d芯能级位移，以Pb作活性剂时Co膜的活化外延生长，以及超薄Co在Cu(111)表面的自旋交换劈裂，得到了一些有意义的结果。

Based on the above investigation of ideal layer-by-layer growth process, the surface roughening phenomena during the real epitaxial growth are discussed. Some important microscopic dynamic models for molecular-beam epitaxy , which have attracted much attention recently, are studied. Using the master-equation method, the corresponding growth equations are directly derived, and then the scaling behaviors, the universalities, as well as the crossover effects are determined.

在这一理想层状外延生长研究的基础上对实际外延生长过程中十分显著的表面粗化现象进行了探讨，深入研究了几类近年来受到广泛关注的描述分子束外延生长的重要的微观动力学生长模型，采用主方程方法直接得到了相应的非线性生长方程，并确定了标度性质、普适类以及渡越行为。

Experimental results show that the film qualities are greatly affected by the ion-implantation temperature as well as the epitaxial annealing temperature.

通过实验系统地研究了离子注入过程中温度条件的控制对外延层质量的影响以及外延退火条件的选择与外延层结晶质量的关系。

The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs l...

结果表明，低温外延是制备较高质量外延层的一种可取方法。

Precise measurement and control of GaN-film thickness is very important for GaN-based materials epitaxy and devices fabrication.

在GaN基材料外延和器件制作中，对外延膜厚度的精确测量和控制至关重要。

A study of the low temperature epitaxy process for GaAs has been made together with evaluation of the quality of the epitaxial layers obtained.

本文研究了GaAs低温气相外延过程和评价了外延层的质量。

The terrace widths and step densities increase with increasing the GaAs layer thickness and then saturates.

原子力显微镜测试表明：在常规分子束外延情况下，GaAs外延层台阶的厚度和台面的宽度随衬底温度的升高而增加，增加外延层厚度会导致台阶的密度和台面的宽度增加然后饱和。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。