外延

The effect of δ-doping in n-type layers on crystal performance of GaN epitaxial films on Si substrates was studied by ω-scan of different crystal planes with X-ray diffraction method.

用X射线衍射方法通过不同晶面的ω扫描测试，分析了Si衬底GaN蓝光LED外延膜中n-型层δ掺杂Si处理对外延膜结晶性能的影响。

As American educator Walter once said:the denotation of Chinese is equal to the connotation of life.

美国教育家华特说过"语文的外延与生活的外延相等"。

And the devices'properties and improve the properties to prepare the artificial boundary. The bi-epitaxial YBCO superconducting film with 45°grain boundary in a-b plane was made for the first time in China in this article by magnetic sputtering instrument that was designed and fabricated by ourselves. The x-ray θ～ 2θ scan 、Ф scan、rocking curve、non-symmetry diffraction and SEM、 TEM、AES etc. were utilized in the study.

为此，本工作采用自行设计制造的全金属密封超高真空磁控溅射设备，利用x射线θ～2θ扫描、Ф扫描、摇摆曲线、非对称衍射及SEM、TEM、AES等分析测试手段，在国内首次、也是至今唯一的一家，制得a—b平面内具有45°人工晶界的双外延YBCO超导薄膜，并进而得到双外延晶界Josephson结。

The secondary intension is the ordinary intension, the one to which the externalist arguments apply. It is the function from worlds to extensions that are the values of the two-dimensional function.

第二内涵是日常内涵，是外在论自变量所使用的内涵，这是从诸世界到外延的函数，而外延就是二维函数的值。

The epitaxial wafer is equipped with two detached quantum traps, by preparing three electrodes on the p-type layer I, the n-type layer and the p-type layer II, the two quantum traps can respectively emit light with different wavelength under applied voltage, after the epitaxial wafer is prepared to LED chip, mixing light with different wavelength emitted by the quantum trap I and the quantum trap II are obtained, or a single-color light emitted by the quantum trap I or the quantum trap II is obtained, thereby greatly extending application area of the LED.

本发明外延片设有两个分隔的量子阱，通过在p型层I、n型层、和p型层II制作三个电极，可使两量子阱在外加电压下分别发射不同波长的光，该外延片制作成LED芯片后，可获得由量子阱I和量子阱II发出的不同波长的混合光，或者分别发出由量子阱I或量子阱II产生的一种颜色的单色光，大大拓展LED的应用范围。

An N-type epitaxial layer (115), which is formed above an N-type semiconductor substrate (114) in each of a pixel region and a peripheral circuit region; a first P-type well (1) formed above the N-type epitaxial layer (115) in the pixel region; and light receiving regions (117), which are formed within the first P-type well (1) and each of which is a component of a photodiode, are included.

包括在每个像素区域和外围电路区域中的N型半导体衬底114之上形成的N型外延层115；在像素区域中的N型外延层115上形成的第一P型阱1；以及在第一P型阱1中形成的并都是光电二极管部件的光接收区域117。

On the basis of common GM(1,1) model and by means of establishing residual error periodic extensional model, the authors extract predominant period and reconstruct a new data sequence; then after superposing the values of the same time in different period, a ray-periodic extensional combinatorial model is built.

提出了灰色–周期外延组合模型，即在一般灰色模型GM(1，1)的基础上建立残差周期外延模型，并提取优势周期以重新构造新的数据序列，再将不同周期同一时刻的值叠加。

The main task of this paper is to investigate the growth of high quality single crystalline Zinc Oxide thin film on sapphire (0001;α-Al_2O_3) substrate via radio frequency plasma-assisted molecular beam epitaxy. The work will lay a foundation for application of novel semiconductor material, ZnO, in the field of photoelectronic devices.

本论文的主要任务是研究在蓝宝石(0001)衬底上利用射频等离子体辅助分子束外延系统生长出高质量的氧化锌单晶外延薄膜，为ZnO这一新颖的半导体材料在光电子器件方面得到应用打下基础。

This text has described the epitaxy and intension of the mobile phone systematically in terms of semiology , it expounds epitaxy and practical operation rule of intension to combine the instance analysis.

本文从符号学角度系统论述了手机的符号的外延和内涵，并结合实例分析阐明了外延与内涵的实际操作法则。

Epitaxial growth of GaN on sapphire and novel substrate LiAlO〓 1 The growth mechanism of GaN on sapphire substrate was investigated using AFM, X-ray diffraction, X-ray double crystal diffraction, Rutherford back scattering etc.

阐明了衬底表面的氮化处理、缓冲层的生长对外延膜结晶形貌、结晶质量、以及外延匹配关系的影响规律。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐