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The optimized processing parameters including screen print and hot pressing were obtained. In order to reduce error, the method of double-face screen print in key electrode layer and stepped press were used. Ceramics are dense after sintering. The thickness of electrode is about 5μm. The test fixtures based on microstripe for SMD were design and fabricated.

采用平面电感和平板电容结构实现的LC谐振器,由于集总电感的Q值较小以及高介电常数介质基片杂散参数效应,这种结构的谐振器Q值较小;采用新的耦合结构-间隙电容耦合结构,实现谐振器和外电路的匹配耦合,使谐振器和耦合电容在同一层上实现,即单层结构,和传统的平行板电容耦合方式相比减小了耦合电容对位误差。

Should the ink reticulate, the surface energy of the substrate is lower than that of the ink.

如果油墨网状,基片表面能量低于油墨。

TiN film is prepared by using multi-arc ion plating technique on the stainless steel substrate. The microhardness is measured by the Hv sclerometer.

采用电弧离子镀技术在不锈钢基片上沉积了TiN薄膜,利用显微硬度计测量了薄膜的表面硬度。

The adhesion force of the resulting carbon nitride film was measured making use of scratch test.

采用磁控溅射法在高速钢基片上制备了氮化碳薄膜,并以划痕法对其附着力进行了研究。

Cu/Zr nano-multilayer films are prepared by Direct Current magnetron sputtering in the silex substrate, and the box-type furnace is used to anneal. Micro-sclerometer, X-ray Diffractometer and Scanning Probe Microscope are used to analyze the mechanical performance and microstructure of Cu/Zr nano-multilayer films. The relation of process parameters and performance is investigated.

本文利用直流磁控溅射方法在石英玻璃基片上制备了一系列自支撑Cu/Zr纳米多层膜,使用箱式电炉对多层膜进行退火处理,利用显微硬度计、X射线衍射仪、扫描探针显微镜表征了多层膜的力学性能与微观结构,研究了不同工艺参数对纳米多层膜性能的影响。

It is a versatile splicer, handling substrates from unsupported film to paperboard.

这是一个功能捻接器,处理从不受支持的基片的纸板。

Higher substrate temperature contributes to crystal grain growth, which can get better TiO2 thin films of stoichiometric ratio.

基片温度的升高有助于晶粒的长大,可以得到较好的化学计量比的TiO2薄膜。

Vanadium oxide thin films deposited on slide glass substrates are prepared by facing-target magnetron sputtering.The effect of sputtering conditions on temperature coefficient of resistance is analyzed by orthogonal experiment,and the optimum process recipes are achieved,including Ar∶O2=48∶0.4,gas pressure is 2 Pa,substrate temperature is 27 ℃,sputtering power is 180 W.

利用对靶磁控溅射法在玻璃基片上制备VOx薄膜,采用正交实验方法研究了镀膜条件对VOx薄膜电阻温度系数的影响,得到优化的镀膜工艺参数,主要包括Ar∶O2为48∶0.4、工作压力恒定为2 Pa、基底的温度为室温27℃、溅射功率保持在180W,在此基础上,进行不同温度条件的真空退火,得到薄膜TCR在-2.5%~-4.5%范围。

A two-electrode configuration has been fabricated by depositing gold film on a polyethylene terephthalate substrate.

在塑料基片上制备了金薄膜的两电极系统的生物传感器。

In another embodiment, the card substrate (402) is of the same size and shape as is the card blank (420) and the space therebetween is filled with melt flowable adhesive (424) to bond them together and embed the electronic device (410) therebetween.

在另一个实施例中,卡基片(402)的尺寸和形状与空白卡(420)相同,它们两者之间的空间填满熔融可流动粘结剂(424),以将它们粘结在一起,并在它们两者之间嵌入该电子装置(410)。

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