基片

TiO2 film was deposited on the stainless seel substrate by using Sol- Gel mehod with Ti(OB4) as a precursor.

采用钛酸正丁酯作为前驱体，通过溶胶-凝胶法在不锈钢基片上制备了TiO2纳米薄膜。

Stickly controlling the stabilization of deposition condition is the key to delimate outgrowths and precipitates. Defects and contaminations on the substrate surface are also the cause of surface outgrouths and precipitates.

严格控制工艺条件稳定在理想范围内是消除薄膜表面突出物和杂相的关键，而基片表面的缺陷和污染也是引入杂相的重要因素。

The stoichiometrical preferred-orientation AlN (100) polycrystalline films were deposited on Si (100) wafers with DE=1.0 J*cm-2, PN2=13.333 kPa, Tsub=200℃, V=650 V, f=5 Hz, and dS-T=4 cm.

实验结果表明，当DE=1.0 J*cm-2，PN2=13.333 kPa，Tsub=200℃，V=650 V，f=5 Hz，dS-T=4 cm时，高质量的AlN薄膜被成功地沉积于Si(100)基片上。

The substract is (100) single crystal silicon, and operating gases are mixture of Cl-I4 and H2 in all experiments.

实验中所用的基片为P型硅（100）单晶片，工作气体为高纯甲烷（CH_4）和高纯氢（H_2）。

The results showed:there were some differences in phase structure,composition and morphology for the films synthesized at different sulphurization temperatures and time;the films sulphurized at a temperature of 240 ℃ for 45 min were polycrystalline SnS films with orthorhombic structure.

当硫化温度为240 ℃、硫化时间为45 min时，所制得的薄膜为正交结构的SnS多晶薄膜，其均匀性、致密性以及对基片的附着力都较好，具有(111)方向优先生长，薄膜粒径在200～800 nm，且晶格常数与标样的数值吻合很好。

The unlifting pressure process in solid abrasive doublesides lapping has been studied through the mathmatics model established in this paper.

针对固着磨料研磨的特点，通过所建立的数学模型，对固着磨料双面研磨过程中压力的变化进行研究，并对研磨过程的压力实施进行优化，从而找到在研磨过程中最佳的施压方法，以达到对硅晶片、玻璃硬盘基片等进行高速精密和超精密加工的目的。

The polymerized film has better antiwear lifethan the unpolymerized film because polymerization enhances the strenthof the thin film.

并用超分子自组装法将其与甲基丙烯酸十二醇酯和双甲基丙烯酸己二醇酯在玻璃基片上共组装成二氧化钛/有机物复合薄膜。

The specimensdeposited under different temperature are annealed and the structure and optical properties are analyzed.

本文研究了退火工艺对不同基片温度下制备薄膜的结构以及光学常数的影响。

The grain size of the films increased with the increase of substrate temperature, deposition time and atomizing rate of precursor.

基片温度对薄膜的组成影响较大，高沉积温度会导致LaNiO〓薄膜的分解，使薄膜的电阻率异常增大。

The main research focuses on the cracking and crystallizing of the thick silica film deposited on silicon substrate.

重点对硅基片上沉积厚SiO2 时的龟裂和析晶问题进行了深入研究。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。