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The solder removing device comprises the restoring chamber(37) used to store the liquid heating medium whose temperature is above the solder's melting point, the substrate conveying machine used to convey the defectively soldered substrate in and out the solder treating pond, and the brush(45) used to rub the surface of the defectively soldered substrate immerged in the heating medium in the solder treating pond and rub off the solders which are over heated by the heating medium.

焊料移除设备(31)包括用于存储温度高于焊料的熔点的液体形式的加热介质的修复腔室(37)、用于输送有缺陷地焊接的基片进出焊料处理池的基片运输机、和用于摩擦浸入焊料处理池内的加热介质的有缺陷地焊接的基片的表面由此擦去通过加热介质过度加热的焊料的刷子(45)。

The properties of thin films have been investigated with modern analysis technique, such as AFM, SEM, XRD (X-ray diffraction) and Rocking curve. And the properties of YBCO thin film and its substrate and deposition temperature have been analysed, comparing with LAO substrates crystallization quality, YBCO thin film properties, such as morphology and degree of grain alignment, was concluded to correlate with the crystal orientation uniform of LAO substrate as revealed by XRD.

本文结合AFM、SEM研究YBCO薄膜的表面形貌,XRD、FWHM分析薄膜的结晶情况,并结合成膜温度和基片的质量进行一系列结构与性能的对比研究,发现LaAlO3基片的质量对YBCO薄膜的结构完整性有很大影响,不仅影响了薄膜的c轴取向性,而且影响了YBCO的超导性能。

The joining material may be a solder paste, the substrate may be a semiconductor chip substrate, a computer chip. The process may be used to produce flip chips, ball grid array modules, column grid array modules, circuit boards, and attachment structures of the preceding components including information handling systems.

连接材料可以是焊剂糊料,基片可以是半导体芯片基片,计算机芯片,本方法可用于制造倒装式芯片、球粒格网阵列式模块、柱形件格网阵列式模块、电路板、以及包括信息管理系统的上述元件的附着结构。

The analysis gets the result: the two methods both make out the heteromorphism InSb nanocrystals, which have different crystal lattices. There are few In and Sb elementary substance grains mixed in the samples and the ratio of two kinds of chemical elements nears to 1:1. The crystal structure of the particle which is gained in vacuum evaporation method is affected by the crystal structure of substrate surface and anneal, the size of grain is direct proportion to evaporation time.

分析得到结果表明:两种方法均制备出了多晶态的InSb纳米微粒,但晶格结构不同,样品中都混有少量的In和Sb单质颗粒,且两种元素的比均接近1:1;真空蒸镀法得到的微粒的晶态受基片表面晶格和退火的影响,颗粒的尺寸与蒸镀时间成正比;而惰性气体中蒸发法得到的微粒结晶过程与基片无关,颗粒的尺寸与惰性气体的种类和压强有关。

After annealing at 150℃,the moleculesorientate to ordered columnar structure with a intercolumnar spacing of 17.4〓The ringplane of TNPPcZn is orientated nearly perpendicular to the substrate.

采用红外掠射光谱、X射线衍射等方法研究了沉积在基片上的TNPPcZn旋涂膜的结构特征,首次发现原本呈无序排列的酞菁分子,于150℃退火后,分子发生了共面聚集并以接近垂直的角度直立在基片表面上,X射线衍射实验进一步证实了薄膜结构的有序性,并测定出了17.4〓的晶面间距。

Contrast measures acerbity Strontium of anneal around titanium radical piece macle sways curve, show anneal can improve crystal quality apparently, be helpful for implementation exceeding smooth STO base piece treatment.

对比测量退火前后钛酸锶基片的双晶摇摆曲线,表明退火可以明显改善晶体质量,有利于实现超光滑STO基片的加工。

The paper introduced the method and the theory of Lead Sulfide film preparation——Chemical Deposition and analyzed the reason of outshoot cling to the surface of Lead Sulfide film during the process of chemical deposition .

本文介绍了PbS薄膜常用化学沉淀的制备方法及原理,深入分析了基片沉淀过程中表面出现突出物现象的原因,薄膜基片电镜分析以及改善PbS基片表面均匀性的工艺方法。

Then the MEMS solenoid type electromagnetic actuating and novel, frictionless and wear-free, and simple structure are designed for fiber-deflecting type MEMS VOA: One of the two coupled single mode fibers is completely fastened in one of the three aligned U-shaped grooves while the deflectable fiber is partially fixed in another groove with a long front section suspending over the wider groove as a cantilever beam. The two fibers, any one for input and the other for output, are well aligned initially so that the insertion loss is very low. Beside the deflectable fiber is a solenoid microactuator with a U-shaped permalloy core attracting a permalloy piece glued on side of the fiber cantilever so that the fiber is deflected and the optical power coupled between the fibers decreased continuously. Using MEMS solenoid as a continuous actuator and the novel structure of VOA are not seen in literature.

为光纤偏移型MEMS可变光衰减器设计了MEMS螺线管电磁驱动方式以及新颖的避免了静摩擦、磨损而且简单的整体结构形式:在硅基片的三段V形槽结构中,将两个对接单模光纤之一完全固定在基片上,只将另一根光纤的稍后部位固定于基片上而使其前端的一定长度悬空,形成一个悬臂梁结构;初始对准后两根光纤之间的光传输损耗很小;通过U型铁芯MEMS螺线管吸引固定于光纤悬臂梁上的坡莫合金片,驱动光纤悬臂梁连续偏移以使两根光纤之间功率传输系数连续变化,从而达到光功率连续衰减的目的。

The composition of the device comprises a substrate and a cover plate. A cross-form groove is disposed on the base material of the substrate; a disperse phase fluid inlet pipe and a fluid outlet pipe are respectively inlaid in the groove to form a coaxial sleeve structure; a continuous phase fluid inlet pipe is embedded in a groove on the two sides and connected with the coaxial sleeve; and the cover plate is hermitically attached to the upper surface of the substrate and seals the groove.

其组成包括基片和盖片:所述基片的基材上开有一个十字型凹槽;分散相流体入口管和流体出口管分别嵌入到凹槽内形成同轴套管结构;连续相流体入口管嵌入到两侧的凹槽内与所述同轴套管相连;所述盖片紧密贴合在所述基片的上表面上将所述凹槽进行密封。

This invention relates to a circular small UHF antenna with high dielectric constant and its processing method, among which, the UHF antenna characterizes that 1,it is composed of a radiation plate, a feed point and a medium chip, 2, the radiation plate is closely adhered to the top surface of the medium chip, the bottom surface is the metal ground face, the chip and the radiation plate is rectangle or square, 3, the feed point is at the 1/3 place of the diagonal line of the rectangular or square radiation plate apart from the top point.

本发明涉及一种高介电常数圆极化小型超高频天线及其制作方法。UHF天线特征在于(1)所述的超高频天线是由辐射贴片、馈电点和介质基片组成;(2)辐射贴片紧贴在介质基片的上表面,介质基片的下表面为金属接地面;介质基片和辐射贴片呈矩形或正方形;(3)馈电点位于矩形或正方形的辐射贴片的对角线离顶点的1/3处。其制作方法是采用ε≥38高均匀性陶瓷基片,再结合丝网印刷技术完成厚膜焙银后形成辐射贴片,然后再圆极化。具有制作工艺成熟、体积小及使用灵活等特点。

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