基极电流

The symbol for a PNP transistor has an arrow on the emitter indicating the diredtion of current flow, always towards the base.

PNP晶体管有一个表住在发射极的箭头符号用来指示电流的流向，总是围绕在基极的。

Current flow between the emitter and base controls the current flow between the emitter and collector.the emitter of the transistor is the most heavily doped so it has the most excess electrons or holes.

由发射极到基极间的电流控制发射极到集电极间的电流，晶体管的发射极是重掺硅型的，所以它有过量的电子或空穴。练习翻译？遇到难题？快来翻吧

The design rules of silicon low temperature bipolar junction transistor are obtained from the simulation results. One way is that the concentrations of emitter and base are decreased on the base of the normal bipolar junction transistor. Another way is that base concentration is higher than that of emitter, i.

模拟了普通常温工作的双极晶体管在低温下性能的退变，如电流增益、截止频率、基极电阻和基极-发射极电容等，模拟结果和解析模型分析的结果一致，并与常温的结果作了对比分析。

When choosing a value for R6, ensure that Q2's base-emitter voltage is less than approximately 0.5V at the maximum permissible value of the load current.

选择R6的阻值时要确保在负载电流的最高允许值的条件下，Q2的基极-发射极电压大约低於0.5V。

However, because of the obvious snapback breakdown characteristic of NMOS transistor and the layout geometry effect on the distributed base resistance of each parasitic lateral bipolar transistor, multi-finger NMOS cannot be triggered on uniformly under ESD stress.

然而由於N型金氧半电晶体具有明显的骤回崩溃特性，以及布局上每根指状N型寄生横向双载子电晶体之等效基极电阻之不同，造成多指状结构N型金氧半电晶体在静电放电轰击下，并不会均匀的导通来排放静电放电电流，而是集中於某些指状N型金氧半电晶体。

If the emitter ledge is too thick, current will flow through the undepleted ledge, which increases the emitter-size effect.

假如，射极突出部太厚，电流将会沿著未完全空乏的路径，横向扩散至未保护且裸露之基极表面区域，衍生非理想之大量表面复合电流。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。