基板

Our company main products has: IC integer machine; IC legs cut machine; IC grinding machine word; Automatic Tube Forming Machine crystals; electromagnetic, pneumatic machine parts; automatic bulk, loaded with parts cut legs, molding machine ; in bulk, with mounted machine resistance; jumper machine; electric crystal automatic molding machine; V-CUT substrate folded plate machine; automatic feed plate; hand solder immersion heaters; PCB Units cars, trolleys and block tin, the ordinary anti - welding kit aircraft series Reflow Solder Products.

本公司主要产品有：I.C整型机；IC切脚机；IC磨字机；自动管装晶体成型机；电磁式、气动式零件成型机；全自动散装、带装零件剪脚、成型机；散装、带装电阻成型机；跳线机；电晶体自动成型机；V-CUT基板折板机；自动送料盘；手浸式焊锡炉；P.C.B台车、手推车及挡锡条、金手指防焊套、流焊架等系列防焊产品。

Main Product: resistors forming shear pin machine, shear pin capacitance molding machine, molding machine crystal, V-CUT substrate sub-board machine, Grinding, cutting foot machine, pneumatic molding machine, IC plastic plane, IC legs cut machine, IC grinding the word machine, automatic feeding plate, tungsten steel chip, PCB solder placed Units cars and exclusive framework, block tin, the ordinary solder Series Des Welding Products

主要产品：电阻成型切脚机、电容成型切脚机、晶体成型加工机、V-CUT基板分板机、磨刀机、切脚机、气动成型机、IC整型机、IC切脚机、IC磨字机、自动送料盘、钨钢刀片，PCB放置台车及焊锡专用框架、挡锡条、金手指防焊系列辅焊产品

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程，利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝，再直接溅镀金属铝作为指叉电极，比较目前文献制作出来的氮化铝MSM元件，可得到很好的元件金半接面之理想因子1.0125，算出萧特基能障高度为0.916eV，并有很低的暗电流为1.39 pA，提升了元件的特性，使用150 W氘灯入射，光暗电流差距可到两个order，且元件之光电流与入射光功率呈线性，显示所制作之氮化铝MSM元件，很适合针对深紫外光波段侦测。

A complete WP instrument consists of one enhanced main board and several plug-in boards, which is suitable for constructing basic instruments, typical instruments and advanced instruments. The main concerns in all WP instruments design, namely the VXI-VVP interface circuit design project, are discussed in details.

VVP仪器采用了加强的基板加若干功能插板的实现形式，可以构建无处理器的基本应用系统，单处理器的典型应用系统直到多处理器的高端应用系统，文中对VXI-VVP接口部分这一共性关键技术的实现方法进行了详细阐述。

When the concentration of zinc nitrite is lower than 0.1 M,(002) is the prior face for zinc oxide. As the concentration raise, the other kinds of crystal face would appear. Among those data,(002) grows the best when the concentration of zinc nitrite is 0.06 M. We add lactic acid and citric acid respectively; there is an carboxyl group on the lactic acid and three carboxyl groups on the citric acid. The monodentate of lactic acid helps the growth of zinc oxide, compared to the tridentate of citric acid which can only produce zinc oxide film under very low concentration, but the growth of (002) face is not that stable as adding the lactic acid and zinc will electrodeposit to substrate.

实验中，当硝酸锌浓度低於0.1 M 时，氧化锌以(002)面为优选位相，当浓度提高，其他晶面将会出现，当硝酸锌为0.06 M，(002)晶面成长最佳，分别加入乳酸和柠檬酸，乳酸结构上有一羧基团而柠檬酸有三个羧基团，单芽基的乳酸有助於氧化锌成长，对照於三芽基的柠檬酸，则必须在极低的浓度下才能制备氧化锌薄膜，但(002)面成长却没有添加乳酸来的稳定而金属锌也会电沉积到基板上。

All the above ensure quick and high quality metallurgical bonding between flyer plate and base plate.

这些特征保证了复板和基板之间的快速优质冶金结合。

The three control systems respectively were as follows:(1) The measuring part of the first one was displacement piezoelectric sensor. A pair of piezoelectric sensor/actuator was collocated by each side of the first solar array plate. The compensator was H = 2395-s;(2) The measuring part of the second one was also displacement piezoelectric sensor.A pair of piezoelectric sensor/actuator was collocated by each side of the whole solarfan.Tthe compensator was H = 244s;(3) The measuring part of the third one was velocity piezoelectric sensor.A pair of piezoelectric sensor/actuator was collocated by each side of the three solars array plates near to the body of satellite.

三种控制系统分别是：(1)、采用压电位移传感器，压电传感器／驱动器对同位布置于内板的边缘，控制器补偿函数为H=2395s~(1／2)；(2)采用压电位移传感器，压电传感器／驱动器对同位布置于整个太阳帆板的边缘，这是一种理想的情况，控制器补偿函数为H=244s~(1／2)；(3)采用压电速率传感器，压电传感器／驱动器对同位布置于靠近星体的三块基板边缘，控制器补偿函数为H=2370s~(1／2)。

A manipulation portion, which is located on the harmonic tuning element, tunes the harmonic of each string at a position above the base plate while the string is held by the associated string holder.

在用相关琴弦压板保持住琴弦的同时，设在泛音调节部件上的操纵部分在基板上方位置处调节每根琴弦的泛音。

Recently , TFT-LCD(Thin-Film Transistor Liquid crystal Display) is very important to major industries in Taiwan . In order to of satisfy the panel manufacture industry requiring large sizes of panel of cell processes , the conventional processes will be replaced with new technology of cell processes : One Drop Filling (Abbreviation:ODF) in the future . It is important to develop UV/Heat curable resin.In this investigations , we focused on Epoxy Acrylate Oligomer which are major components of ODF Sealant materials. The films are exposed to UV by different times , then the absorption peaks of ethylene and epoxy function group were idendifed with Attenuated Total Reflection-Fourier Transform Infrared Spectroscope to discuss curing ratio and reaction condition .

实验中，将探讨以紫外光和热双效硬化型树脂主要组成为寡聚物为主的ODF封胶材料，将其涂布在玻璃基板上形成薄膜，经过紫外光不同曝光时间及在恒温120℃下不同加热时间，再以衰减全反射式傅立叶转换红外线光谱仪(Attenuated Total Reflection-Fourier Transform Infrared Spectroscope)分析乙烯基和环氧基相关官能基在吸收图谱的变化，探讨在不同环境条件下ODF封胶材料硬化反应程度以及分析鉴定的要素。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。