基板

D Flexible LC notepaper:After a flexible PDCLC sample is irradiated with a suitable UV light for a suitable period at isotropic state, the CLC texture in whole sample is changed to scattered focal conic.

应用在软性基板的PDCLC元件在受到适当紫外光照射后可得一散射态之可挠式面板，若施加适当压力，可如触控笔般在元件上写入讯息或图像，该图像为反射结构。

Up to now, it has been running on the Neo Geo platform; one that had limited capabilities.

到目前为止，它都是运行在Neo Geo基板上的，限制了很多可能性。

Epitaxial AlN films have been successfully deposited on GaN/Sapphire substrates at low-temperature (300℃) using Helicon sputtering system.

本研究之目的是在GaN/Sapphire基板上低温成长AlN的磊晶薄膜，并探讨各种溅镀条件对AlN薄膜品质的影响，以及研究AlN/GaN介面所感应之二维电子气现象，证实介面间受极化效应感应产生的二维电子气确实存在。

In this thesis, the AlN thin films were deposited on SiO2/Si and GaN/Sapphire substrates respectively for layered structure SAW devices by Helicon sputtering system. Laser ultrasound system was used to measure the acoustic wave velocity of AlN/SiO2/Si layered structure. Frequency response and insertion loss were measured by an HP8510C vector network analyzer to analysis insertion loss, sidelobe and quality factor. The results showed the possibility of incorporating thin films SAW devices with other semiconductor devices.

本研究使用回旋溅镀系统分别在SiO2/Si、GaN/Sapphire两种基板上沉积AlN并制作层状表面声波元件，并利用雷射超音波系统量测AlN/SiO2/Si结构之表面波速及机电耦合系数，再利用网路分析仪量测其频率响应，分析其插入耗损、 sidelobe、品质因子Q，以比较不同基材所制作之层状表面声波元件之特性，此研究成果初步验证AlN层状表面声波元件与半导体元件整合之可行性。

For the transition of waveguide to microstrip in LTCC modules with irregular shape, hard hermetical package and bad reliability, a new type of waveguide to microstrip transition in LTCC modules is described in this paper.

针对LTCC 组件中波导到微带过渡基板形状加工不规则、密闭封装困难和可靠性差等问题，本文提出了一种用于毫米波LTCC 组件中波导到微带的新型过渡结构。

The two chips are mounted on a ceramic substrate, and then hermetically sealed in a ceramic surface mount package.

这两款芯片安装在陶瓷基板，然后密封在一个密封的陶瓷表面贴装封装。

In this work, ZnO nanorods were synthesized on the silicon substrates in a solution of zinc nitrate hexahydrate and methenamine at ~85C for 2 hours.

摘要在本研究中，氧化锌奈米柱是使用硝酸锌六水合物及四氮六甲圜在矽基板上以大约85C温度处理两小时来合成的。

The ostium of frontal sinus Positions should be divided into two type by the interaction of basal lamella of bulla and cribriform roof. TypeⅠ: The ostium of frontal sinus is located in lateral sinus, flows through superiorsemilunar hiatus to middle nasal meatus. It is about 20%. TypeⅡ: The ostium of frontal sinus is located in ethmoid infundibulum, frontal recess and its cell, flows through interior semilunar hiatus to middle nasal meatus. It is about 80%. Among them there are about 62.5% in ethmoid infundibulum, about 37.5% in frontal recess.

额窦鼻口的位置可根据筛泡基板与筛顶连接的情况划分为两种类型：Ⅰ型额窦的鼻口开口于侧窦，经上半月裂流入中鼻道，约占20%；Ⅱ型开口于筛漏斗、额隐窝及其气房，经下半月裂流入中鼻道，约占80%，其中开口于筛漏斗约为62.5%；开口位于额隐窝约为37.5%。

However, epitaxy of PZT films directly on Si substrates is very difficult because of the lattice mismatch between them and the interdiffusion owing to the high growth temperature during deposition.

摘要 将PZT 薄膜沉积於Si 基板上是非常困难的，主要由於两者晶格常数的不匹配以及在高温沉积时相互间的扩散问题。

The most commonly technique utilizing for removing the electrostatic discharge is the ionizer for removing the electrostatic discharge on the substrate.

在TFT-LCD生产厂中，最常使用的除静电方式为除静电器，目的就是为了去除玻璃基板上的静电。

In the United States, chronic alcoholism and hepatitis C are the most common ones.

在美国，慢性酒精中毒，肝炎是最常见的。

If you have any questions, you can contact me anytime.

如果有任何问题，你可以随时联系我。