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In this study, porous conductive films were grown on glass substrates, metal substrates and nickel bowl-like array substrates by using glancing angle deposition of aluminum, copper and titanium.

本研究利用斜向沉积法沉积Al、Cu及Ti於玻璃基板、金属基板及镍碗状阵列基板上制备多孔性电极基板

The sealant dispenser includes a stage on which a substrate is mounted; a nozzle for dispensing a sealant while making a relative motion with the substrate; a syringe coupled to the nozzle, for storing the sealant; and a distance sensor installed on both sides of a lower portion of the syringe, for measuring a vertical distance between a principal plane of the substrate and an outlet of the nozzle.

密封剂配送器包括其上可安装基板的工作台;用于在相对基板移动的同时配送密封剂的喷嘴;与喷嘴耦合,用于存储密封剂的注射器;和距离传感器,安装在注射器的下部的两侧,用于测量基板的主平面和喷嘴的出口之间的垂直距离。

A computer of a system control device stores unique information inherent to the circuit substrate (52) such as a relative position of a child substrate position reference mark (266) of each child substrate (260) with respect to a substrate position reference mark (262) of the entire circuit substrate (52) while relating it to the identification code.

使与该识别编码对应付与的各子基板部(260)的子基板位置基准记号(266)对整个电路基板(52)的基板位置基准记号(262)的相对位置等作为电路基板(52)中特有的信息的特有信息存储在系统控制装置的计算机等中。

For MOS capacitors, the saturation current is mainly attributed to the electron-hole pair recombination mechanism. But for MOS capacitors, the saturation current is mainly attributed to the electron-hole pair generation mechanism, and is also controlled by interface trap densities, bulk traps, and suboxide.

对於N型矽基板上的氧半电容而言,其饱和电主要为电子电对在界面及空乏区的合机制,但是对於P型矽基板上的氧半电容而言,其饱和电受控於空乏区内电子电之产生与表面陷阱电荷,矽基板内缺陷,还有次氧化层。

The invention discloses a LCD panel, colorful filter piece and making method, which comprises the following steps: providing a base; forming a buffer material layer on the base; forming patterned lightproof layer on the buffer material layer; adopting patterned lightproof layer as lid to pattern the buffer material layer to form a patterned buffer layer; forming a separating piece through patterned lightproof layer and patterned buffer layer; making the separating piece form multiple pixel areas on the base; forming a colorful filter layer in each pixel area.

本发明公开了一种液晶显示面板、彩色滤光片及其制作方法,其中彩色滤光片的制作方法包括下列步骤:首先,提供一基板,并在基板上形成一缓冲材料层。接着在缓冲材料层上形成一图案化遮光层。以图案化遮光层为罩幕来图案化缓冲材料层而形成一图案化缓冲层,使得该图案化遮光层与图案化缓冲层共同形成一隔离件,且隔离件在基板上形成多个像素区域。然后在每一像素区域内分别形成一彩色滤光层。

Most conventional methods for the extraction of substrate network were based on the use of frequency behavior of Y22 + Y21. However, we found that the feedback signal through the internal circuit elements makes the conductance of the substrate network underestimated while makes the susceptance of the substrate network overestimated. If conventional methods are directly performed on large area SiGe HBTs, a negative effective substrate resistance will be extracted. In the first part of the thesis, a new extraction method for the substrate network parameters of SiGe HBTs is proposed. When extracting the substrate network parameters, the feedback signal through internal circuit elements is considered. All the circuit elements of substrate network are extracted from Ysub instead of Y22 + Y21. The extracted substrate network parameters show a different bias dependence as compared to the conventional methods. By using a simple n+-p junction, we successfully explained the extracted bias dependent substrate network parameters. We developed a series linear regression equation to extracted the intrinsic circuit elements from the ABCD parameters. Compared with the conventional methods which extracted the circuit elements from Y-parameters or Z-parameters, the proposed method is much simple and easy to implement in the computer programs.

传统方法在萃取基板网路参数时,常常由所量得的Y22 + Y21来著手,但我们的研究发现,利用Y22 + Y21的频率关系来萃取基板参数时,基板网路的电导会被低估而基板网路的电纳则会被高估,另外传统基板网路参数萃取方法在萃取大尺寸元件基板网路参数时会得到负值基板等效电阻,以上的非理想效应皆因忽略部份信号会经由本质参数对基板网路做回授的影响,因此本论文中提出一个新的基板网路参数萃取方法,在萃取基板网路参数时考虑了由本质参数所回授的信号,并且由Ysub而非Y22 + Y21萃取基板等效电阻、基板等效电容及基板与集极空乏电容,成功的解决上述的一些非理想效应,所得到的基板网路参数与集极偏压的关系与传统方法所得的趋势相异,经由一个简单的模型成功的解释了所萃取得到的基板网路参数与偏压的关系,在萃取本质参数时,我们舍弃传统萃取方法中常用的Y参数或Z参数萃取方程式,而改用ABCD参数,并提出一系列的线性回归方程式,萃取所有的本质参数,与传统方法比较起来,比较简单而且容易建立在使用者的参数萃取软体中。

The method comprises the procedures as follows:(1) the surface of a base plate is treated:(2) colloidal solution is prepared: and (3) the base plate is put into a vessel and the colloidal solution is added into the vessel; the colloidal solution volatilizes under the constant temperature of 20 DEG C to 70 DEG C; the photonic crystal is taken out until no substance volatilizes, and the photonic crystal is made.

本发明方法如下:一、基板的表面处理;二、胶体溶液的配置;三、将基板放入容器中,然后加入步骤二配置的胶体溶液,然后在温度为20℃-70℃的恒温条件下使胶体溶液挥发,待无物质挥发取出基板,即得到光子晶体。

P: paper-based epoxy resin copper-Park Ji-layer paper between phenolic resin and glass cloth epoxy resin substrate board of the electrical characteristics of the middle, humidity, and heat resistance, used in single-and double-sided printed circuit boards, the main purpose of which is the circuit used for a variety of power requirements of high-frequency characteristics of substrate and the color TV, VTR, etc. used in tuning, as well as the board, such as OA machines.

。P:纸质环氧树脂铜泊积层有介于纸质酚醛树脂基板及玻璃布环氧树脂机板中间之电气特性,耐湿性,耐热性,使用于单面及双面印刷电路板,主要的用途是用于各种电源回路用基板及要求高周波特性之彩色TV,VTR等之调谐器用,以及OA机器等机板。

To solve the problem, a three-point bending test was put forward.

中文摘要:针对以Q450NQR1钢为基板、B级钢为腹板模拟实际工装位置,疲劳断裂与货车运营实际工况不符的问题,提出以B级钢为基板、Q450NQR1钢为腹板进行三点弯曲疲劳试验,诱使疲劳裂纹向B级钢侧扩展,研究了MAG气体保护焊B级钢/Q450NQR1钢搭接接头的疲劳性能。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现,由於控制闸极耦合电容的影响,加上电位移向量在半导体-氧化层界面连续的观念,拥有较高介电常数的锗反而得到较小的等效电场,决定了穿隧电流反倒是不如矽基板;在F-N穿隧写入的模拟中,即便锗基板拥有较大的总耦合电容,使得在浮闸的耦合电压大於矽基板,但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素,得到的结果仍旧是矽基板的写入速度高於锗基板;在F-N抹除的模拟中,运用与F-N写入相同的数学模型,仍旧看见在锗基板上未能得到速度上的改善,同时用数学的计算展示了合理的解释。

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