型半导体

A cable railway on a steep incline, especially such a railway with simultaneously ascending and descending cars counterbalancing one another.Each of these logic families, TTL, ECL, PMOS, NMOS and CMOS, has a specific set of characteristics that make it desirable for certain applications.

每一种逻辑元件，晶体管一晶体管逻辑电路、发射极耦合逻辑电路f 型金属氧化物半导体、n 型金属氧化物半导体和补充金属氧化物半导体，都有其特有的性质，从而适用于不同的用途。

In this dissertation, we study a variety of materials , from conventional semiconductor, organic semiconductor to semimetal, adsorbed on transitional metal surfaces.

本 论文对二维新型材料（从有机半导体、无机半导体到新近发现的半金属graphene）进行了第一性原理研究，研究涉及的材料物性包括几何构型、电子结构等方面。

The invention discloses an optical-fiber all-optical code converter, comprising a temperature control circuit as well as optical-fiber Mach-Zed interferometer, heat sink, semiconductor refrigerator, thermosensitive resistor and radiator, where the interferometer is composed of two cascaded 3dB couplers on the heat sink, the relation between length difference delta L of two arms of the interferometer and generated delay time difference delta T is that delta L=c.delta T/n, where c is light velocity in vacuum and n is refractive index of optical fiber; the thermosensitive resistor is used to detect temperature of interferometer, the temperature control circuit is used to compare feedback voltage of the thermosenstive resistor with a given voltage to regulate working current of the semiconductor refrigerator, and the semiconductor refrigerator refrigerates or heat two arms of the interferometer by the heat sink.

本发明公开了一种光纤型全光码型转换器，它包括温控电路和位于密封盒内的光纤型马赫-泽德干涉仪、导热热沉、半导体制冷器、热敏电阻以及散热片；干涉仪由位于导热热沉上的二个3dB耦合器级联而成，两臂的长度差ΔL与产生的延时差ΔT之间的关系为ΔL＝c。ΔT/n，c为真空中光速，n为光纤折射率；热敏电阻用于对干涉仪的温度进行探测，温控电路用于比较热敏电阻反馈的探测电压和设定电压，对半导体制冷器的工作电流进行调节，半导体制冷器通过导热热沉对干涉仪两臂同时进行制冷或加热。

The Hall effect,XPS,optical absorption,Raman scattering,and cathode luminescence have been used to study the electrical properties,crystal quality,and defects of indium-doped bulk ZnO single crystals grown by the chemical vapor transport method.

张璠 中国科学院半导体研究所，北京 100083赵有文中国科学院半导体研究所，北京 100083董志远中国科学院半导体研究所，北京 100083张瑞中国科学院半导体研究所，北京 100083杨俊中国科学院半导体研究所，北京 100083研究了In掺杂n型ZnO体单晶的化学气相传输法生长和材料性质。

The invention discloses a high-voltage P-type metal oxide semiconductor, including a P-type substrate, a deep N-well is arranged on the P-type substrate, an N-well drift region and a P-type drift region are arranged on the deep N-well, an N-type contact hole, a P-type source and a field oxide layer are arranged on the N-well, a P-type drain and the field oxide layer are arranged on the P-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the N-well is smaller than the grid oxide layer part which is positioned above the P-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly.

本发明公开一种高压P型金属氧化物半导体管，包括P型衬底，在P型衬底上设有深N型阱，在深N型阱上设有N型阱和P型漂移区，在N型阱上设有N型接触孔、P型源及场氧化层，在P型漂移区上设有P型漏及场氧化层，其特征在于位于N型阱上方的栅氧化层部分的厚度小于位于P型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层。

The invention discloses a high-voltage N-type metal oxide semiconductor, including a P-type substrate, a P-well drift region and an N-type drift region are arranged on the P-type substrate, a P-type contact hole, an N-type source and a field oxide layer are arranged on the P-well, an N-type drain and the filed oxide layer are arranged on the N-type drift region; the invention is characterized in that the thickness a grid oxide layer part which is positioned above the P-well is smaller than the grid oxide layer part which is positioned above the N-type drift region and a thin grid oxide layer and a thick thin grid oxide layer are respectively formed accordingly, a P-type impurity injection region is arranged in the P-well, and the P-type impurity injection region is positioned below the thin grid oxide layer.

本发明公开一种高压N型金属氧化物半导体管，包括P型衬底，在P型衬底上设有P型阱和N型漂移区，在P型阱上设有P型接触孔、N型源及场氧化层，在N型漂移区上设有N型漏及场氧化层，其特征在于位于P型阱上方的栅氧化层部分的厚度小于位于N型漂移区上方的栅氧化层部分并由此分别形成薄栅氧化层和厚薄栅氧化层，在P型阱内设有P型杂质注入区且该P型杂质注入区位于薄栅氧化层的下面。

The main products of our company is ZP Standard Recovery Diode、ZK Fast Recovery Diode、KP Phase Control Thyristor、KS Triac Thyristor、KK Fast Thyristor、KG High Frequency Thyristor、 Bridge Rectifier、 Power Modules、Schottky Module、SF Super Fast Recovery Diode Module 、Welding Machine Module、 Solid State Relay、 Solid State Voltage Regulator、Heat Sink Material and so on .

企业主要生产：ZP型普通整流管、ZK型快速整流管、KP型普通晶闸管、KS型双向晶闸管、KK型快速晶闸管、KG型高频晶闸管、桥式整流器、电力模块、肖特基模块、SF超快恢复二极管、电焊机专用模块、固态继电器、固态调压器、型材散热器等电力半导体器件。

Using LM135 semiconductor temperature sensor, CPU and digital tube interface, a digital display free-air thermometer for helicopters has been developed sucessfully, which will take the place of the bimetal pointer thermometer.

采用LM135型半导体温度传感器，与CPU、数码管接口，经A/D和V/F转换等信号处理，成功研制了某直升飞机数字大气温度显示器，取代了双金属片指针式温度计。

In today's rapid development of the techniques of photovoltaic and micro-semi-conductor inverters, the solar energy cell made with monocrystalline silicon is able to change the solar energy into luminous energy to realize the startup of revolution of green energy.

在光伏技术和微小型半导体逆变器技术飞速发展的今天，利用硅单晶所生产的太阳能电池可以直接把太阳能转化为光能，实现了迈向绿色能源革命的开始。

Charge separation between the organic and inorganic components inhibits overlap of the electron and hole wave functions and may therefore decrease the probability of the carriers recombining radiatively.

霍尔电阻率和场诱导表面光电压谱测试，表明杂化材料是p型半导体。

On the other hand, the more important thing is because the urban housing is a kind of heterogeneity products.

另一方面，更重要的是由于城市住房是一种异质性产品。

Climate histogram is the fall that collects place measure calm value, cent serves as cross axle for a few equal interval, the area that the frequency that the value appears according to place is accumulated and becomes will be determined inside each interval, discharge the graph that rise with post, also be called histogram.

气候直方图是将所收集的降水量测定值，分为几个相等的区间作为横轴，并将各区间内所测定值依所出现的次数累积而成的面积，用柱子排起来的图形，也叫做柱状图。