场致发光

An organic electroluminescence device is a high electric field devices which depends on charge carrier injection, but is different from inorganic LED.

有机电致发光器件是载流子注入性器件，但又与无机发光二极管不同，属于高场器件。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Hence, the study of photovoltaic effect might be helpful to understand the mechanism of electroluminescence.

实验发现这两个现象之间存在有趣的联系，因此对其光伏现象的研究有助于了解其场致发光过程。

In this dissertation, we optimized the thinkness of each layer of TFEL devices using the layered optimization method to obtain ZnS: Ce〓 TFEL devices. Accoding to the energy level structure of Ce〓, two criteria for distinguishing the EL of Ce〓 were found out, from which it was conduded that the TFEL of ZnS: Ce〓 comes from 5d→4f transition of Ce〓. The measurement of brightness waveform showed that the TFEL of ZnS: Ce〓 was the luminescence from independent centers. and there were the field induced-delocalization in this process anf it〓s the cause of low TFEL efficiency of ZnS: Ce〓. In this dissertation, different influence factors on TFEL of ZnS: Ce〓 were sdudied. The influence of different host lattice is different: The blue/green ratio of ZnS: Ce〓 in hexagonal system of ZnS is larger than that in cubic system of ZnS, and the TFEL peaks in hexagonal system of ZnS moves toward longer wavelength compared with that in cubic system of ZnS. The adding buffer layer was used in this stage. The solubility of Ce〓 in ZnS was small and it was another limit to TFEL brightness of ZnS: Ce〓 device. The solubility of Ce〓 increased ten times when using Li ions as flux, so that the TFEL brightness of ZnS: Ce〓 was enhanced. It was found that the appearing of ZnO in active layer improves the TFEL of ZnS: Ce〓: the brightness and the wave range of ZnS: Ce〓TFEL were enhanced.

本文采用TFEL的分层优化方案，优化组合了各膜层厚度，选择最佳制备条件，得到了ZnS：Ce〓的TFEL；根据Ce〓的能级结构，找到了判别Ce〓的EL的两个简单依据，并据此断定ZnS：Ce〓的TFEL的两个发射峰分别属于Ce〓的〓和〓跃迁；亮度波形测量表明ZnS：Ce〓的TFEL属于分立中心发光，分析认为在此过程中存在着较严重的场致离化，这也是ZnS：Ce〓的TFEL效率较低的一个原因；本文考查了影响ZnS：Ce〓的TFEL的各种因素，发现：基质的晶体结构对ZnS：Ce〓的TFEL有所影响，在六角相ZnS中Ce〓的TFEL优于立方相ZnS中Ce〓的TFEL：发射峰的蓝-绿比相对较大，且光谱向短波方向移动，在此项研究中本文采用了在发光层前增镀过渡层的办法，过渡层为六角晶相的ZnO；限制ZnS：Ce〓的TFEL器件亮度的一个原因是Ce〓在ZnS中的溶解度低，本文用Li离子作助溶剂增大了Ce〓的溶解度，增大幅度为一个量级，并且ZnS：Ce〓的TFEL亮度明显提高；从ZnS：Ce〓的TFEL光谱来看ZnS：Ce〓的TFEL波长覆盖范围较小，亮度也不高，达不到做为白色TFEL材料的要求，需要寻找新的白色TFEL材料；在研究ZnS：Ce〓的TFEL中还发现：发光层中ZnO的出现有利于ZnS：Ce〓的TFEL：发射峰变宽、亮度增大。

The experimental method was described for measuring the chromaticity of the light source of electroluminescence lines by means of a grating monochromator .

基于色度学的基本理论和色度的测量方法，提出了用平面光栅单色仪测量场致发光线光源色度的方法，研究了场致发光线的结构和发光原理

We further study the photoluminescence and field emission property of ZnO arrays.

进一步研究了阵列的光致发光和场电子发射特性。

The gate voltage and the anode voltage parameters that could influence the performance of triode FED are analyzed and discussed.

将阴栅极板和荧光屏封装成5英寸三极结构的场致发射显示器，实现了稳定的场致电子发光显示。

Another electroluminescent and has the type of light source such as light source.

另有场致发光和蓄光源等光源种类。

The absorption and distribution of chromium were studied in ryeusing nutrient culture technique and pot experiment.

采用不同浓度K2CrO4(0，0.4，0.8和1.2 mmol/L)的Hoagland营养液处理黑麦幼苗，测定铬在黑麦体内的亚细胞分布、铬化学形态及不同部位的积累。

By analyzing theory foundation of mathematical morphology in the digital image processing, researching morphology arithmetic of the binary Image, discussing two basic forms for the least structure element: dilation and erosion.

通过分析数学形态学在图像中的理论基础，研究二值图像的形态分析算法，探讨最小结构元素的两种基本形态：膨胀和腐蚀；分析了数学形态学复杂算法的基本原理，把数学形态学的部分并行处理理念引入到家实际应用中。