场效应晶体管

In recent years, a research on the field effect transistor with ZnO as an active channel layer has been made abroad.

近年来，国外已经开展了以ZnO为沟道层的场效应晶体管的研究工作。

A numerical simulation of low frequency current-voltage characteristic for the high Tc superconducting field effect transistor is conducted.

对高温超导场效应晶体管的低频电流-电压特性进行了数值模拟。

Side of the transformer, hence at the end of the flyback phase.

在准谐振模式里，由变压器电感和场效应晶体管输出电容引起的谐振促使开关的开通时刻发生在漏源极电压的最小值上。

The nanotube transistors exhibited n-type semiconductor characteristics, and the conductance of nanotube FETs can be modulated by more than 4 orders of magatitude at room temperature.

显示了纳米器件实际应用的可能性。7利用单根CNx／C纳米管作为半导体材料制备了n型的场效应晶体管，器件的电子密度在105～106 cm-1之间，亚阀值斜率为300-800mV／decode之间，开关比约为10000。

VDMOS power field-effect transistor is abroad 1980s with the rapid development of a new power devices.

VDMOS功率场效应晶体管是国外80年代迅速发展起来的一种新型功率器件。

VDMOS power field-effect transistor is abroad 1980s with the rapiddevelopment of a new power devices.

VDMOS功率场效应晶体管是国外80年代迅速发展起来的一种新型功率器件。

The effect of neutral trap on tunneling currentin ultrathin MOSFETs is investigated by num erical analy- sis.

用数值分析的方法讨论了中性陷阱对超薄场效应晶体管隧穿电流的影响。

Semiconducting carbon nanotubes can be used to fabricate field-effect transistors while metallic ones can be used as interconnects.

半导体型的碳纳米管可以用来制作场效应晶体管，金属型的碳纳米管可以用来做互连线。

By using VDMOS field-effect transistorsas the switch elements, the electronic controlling circuits of the PM brushless DC motor, including the main power switch circuit , power driving circuit, absorption circuit, and logic controlling circuit, are designed.

用 VDMOS场效应晶体管作为开关元件，设计了稀土永磁无刷直流电机的电子控制线路，主要包括：功率开关主回路，功率驱动回路，吸收回路，逻辑控制电路。

The MOSFET will be turned on hard, in this case at a voltage level of 500 V (at time point 3.3 μs).

场效应晶体管开通应力大，在这个例子里，开通电压在500伏特（在3.3微秒的时间点）。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。