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Keywords: piezoelectric crystal; isomorph; First-principle; crystal growth

中文关键词:压电晶体;异质同构晶体;第一性原理计算;晶体生长

The invention relates to a light pumping system for all-solid laser, particularly a light pumping system for disc type laser, comprising heat sink, laser crystal, optical fiber, plane reflector, a first concave reflector, a second concave reflector, and a third concave reflector, and adopting a structure that the plane reflector is between the optical fiber and the first concave reflector, to make the LD and laser cavity on the same side of the laser crystal, thus reducing the packaged size of the laser; the invention fixes the plane reflector on the heat sink to reduce the inclined incident angle of the pumped light beam, thus the pumped light can be fully absorbed, and the invention solves the problem of pumping efficiency and largely reduces the bulk of the laser, beneficial to the all curing of the product and ensuring the cooling requirement of the laser crystal.

本发明涉及全固体激光器的光泵浦系统,特别是一种盘式激光器的光泵浦系统。包括热沉1、激光晶体2、光纤3、平面反射镜4、第一凹面反射镜5、第二凹面反射镜6、第三凹面反射镜7,本发明采用平面反射镜位于光纤与第一凹面反射镜之间的结构,使LD和激光腔位于本发明激光晶体的同一侧,从而减小了激光器的封装尺寸;本发明将平面反射镜固定在热沉上,使泵浦光束斜入射角减小,泵浦光则能充分吸收,为此,本发明解决背景技术采用第一凹面反射镜使泵浦光束斜入射角过大引起的像散,泵浦光斑变形引起泵浦效率降低问题,使得本发明可选用大面积半导体制冷器,避免使用水冷,则激光器的体积大大减少,有利于产品的全固化,保证了激光晶体的散热要求。

Since polar organic crystals have noncentric structures, the existence of polar axis in the crystals has a significant effect on the molecular arrangement and on the crystal growth.

极性有机晶体在不同的溶剂中具有明显不同的生长习性,主要有两个方面的原因:一是极性有机晶体属非中心对称性晶类,晶体具有极轴,极轴的存在对分子堆积和晶体生长具有重要影响;另一是极性有机晶体的界面结构不同,溶剂与晶体界面的相互作用不同,使得晶体同一面族的生长速率不同,从而导致了晶体习性的改变。

The model of programmed crystallization of SPM was proposed based on the moment transformation of the population considering the agglomeration. The optimal temperature-time curves in a batch crystallizer which maximized the terminal mean size and mean weight size can be determined from the application of the Pontryagin Maximum Principle. The calculated crystallization results heating under optimal temperature were compared with ones under linear or natural heating temperature.

根据第四章所得到的螺旋霉素晶体二次成核和晶体生长和布朗扩散引起的聚集动力学,利用第六章所描述的晶体尺寸分布的各阶矩对时间的一阶导数所构成的自封闭的一阶常微分方程组,采用庞得里亚金极大值原理,以温度为控制变量,在满足某些约束条件下,以最大平均尺寸和最大晶体重量平均尺寸为性能指标,计算出了螺旋霉素间歇结晶的最优温度—时间曲线,并同线性加热和自然方式进行了比较。

AlN is an important Ⅲ-Ⅴ compound semiconductor material with wide band-gap, which has wurtzite structure too.

氮化铝是一类重要的宽带隙Ⅲ-Ⅴ族化合物半导体材料,其晶体结构为纤锌矿型,同ZnO的晶体结构相同。

CaSiO〓 came out to be major crystal phase in glazes with high CaO/MgO ratio. Relatively, melilite and clinopyroxene became major crystal phase when CaO/MgO ratio neared 1 or when MgO was more than CaO.

在釉式中其它组分固定时,氧化铝、氧化硅含量较低时,熔体粘度较小,有利于形成晶体结构简单的晶相;对同结构的晶体而言,有利于晶体的快速生长。

The batch seeded isothermal desupersaturation experiments of SPM in aqueous solution were carried out and the overall crystal growth kinetics parameters were determined by the nonlinear optimization techniques. Assuming that the volume diffusion rate at growth is equal to the mass transfer rate at dissolution under the same conditions, the two-step crystal growth rate parameters can be determined. At the fow supersaturation, the surface integration rate is proportional to relative surface supersaturation.

通过测量螺旋霉素均相成核动力学,获得了表面能的值,估算出表面熵因子的值在1.41~1.56之间,从而可以推断出螺旋霉素晶体生长的表面反应速率同表面相对过饱和度成线性关系,这种生长机理同第四章得到的结果是相吻合的;利用估算的表面熵因子的值,把螺旋霉素晶体看作为简单的立方科瑟尔晶体,根据能量最低原理,对螺旋霉素的晶体生长进行了模拟。

Completely different crystal structures and morphology were shown in the meltdrawn films of two kinds of tacticity of sPP. A continuous conformational transform from the 〓 into the of sPP was induced by further stretching. While the zigzag conformation can retransform back to helical 〓 one after annealing above 80℃, the mechanism of conformation transform has been introduced.

Petermann教授学科专业高分子化学与物理研究领域\研究方向学位级别博士学位授予单位中国科学院长春应用化学研究所学位授予日期2001 论文页码总数114页关键词聚丙烯聚丁烯共聚物聚α-烯烃馆藏号BSLW /2003 /O632 /3 用电子显微学、电子衍射、DSC和FTIR等技术对聚α-烯烃及其共聚物的晶体结构和相转变行为进行了系统地研究,包括间同立构聚丙烯、全同立构和间同立构聚丁烯-1(iPB-1,sPB-1)、以及丙烯-丁烯-1间同立构共聚物。

SiC polytypes of 6H and 15R and a transition zone between the two were observed under HREM and TEM and discussed from the point view of the crystal structures; the clear evidence of Al〓C〓 nucleated in the SiC particle was provided, indicating the aluminum penetrating the SiC grains is already carbon-saturated and, consequently, Al〓C〓 crystals grow in the particles wherever a temporary local supersaturating is produced; The experimental observation indicated that the types of the interface between SiC and Al are variable and the distribution feature of reaction product, Al〓C〓, were also given in the present work: to be nucleated on SiC, to be aggregated at SiC/Al interface zone or to be aggregated at the crystal boundaries.

通过高分辨透射电镜,本文观察到SiC增强体中6H和15R同质多晶现象及6H-15R SiC转变区,以及另外一种无序的SiC同质多晶,并从其晶体结构的角度解释了6H和15R在晶体内共存的现象。通过高分辨透射电镜,本文给出了Al〓C〓在SiC颗粒内部形核的明证,表明Al〓C〓形核是Al渗透到SiC颗粒内部在C过饱和处在SiC的(0006)面上而形核,而且一种可能的位相关系为A1〓C〓[11〓0]∥SiC[11〓0]。研究结果同时给出了SiC/Al复合材料的界面反应产物A1〓C〓的分布特征:在SiC上形核并生长,聚集于SiC/Al界面去附近,或者聚集于晶界上。

Moreover CGANN was utilized to recognize the patterns of piezoelectric TSM array data set. The results show that the algorithm has strong compatible capacity and can correctly identify the samples of different classes of chemical substances such as ethanol, chloroform and acetone.

同时我们使用CGANN方法作为模式识别工具,对压电TSM晶体传感器阵列数据进行了分析,结果发现压电TSM晶体传感器阵列能够准确的识别气态物质,比较其他方法而言,CGANN具有明显的优点,如容错能力更强,识别速度更快等,CGANN方法同压电TSM晶体传感器阵列的结合在气态物质识别中有着广阔的应用前景。

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