变晶的

The results show that the flow stress decreases with increasing deforming temperature and increases with increasing strain rate. The flow stress of the alloy during hot compression deformation can be described by constitutive equation in hyperbolic sine function with a hot deformation activation energy of 196.27 kJ/mol. Partial recystallization takes place in the alloys deformed at a high temperature or at a low strain rate, and large number of dislocations and subgrains are observed in the alloy. The elongated grains observed in the samples coarsen with increasing temperature and decreasing strain rate. Correspondingly, the subgrain size increases and the dislocation density decreases. The main soften mechanism of the alloy transforms from dynamic recovery to dynamic recrystallization.

结果表明：Al-Cu-Mg-Ag耐热铝合金在热压缩变形中的流变应力随着温度的升高而减小，随着应变速率的增大而增大；该合金的热压缩变形流变应力行为可用双曲正弦形式的本构方程来描述，其变形激活能为196.27kJ/mol；在变形温度较高或应变速率较低的合金中发生部分再结晶，并且在合金组织中存在大量的位错和亚晶；随着温度的升高和应变速率的降低，合金中拉长的晶粒发生粗化，亚晶尺寸增大，位错密度减小，合金的主要软化机制逐步由动态回复转变为动态再结晶。

At this stage, the solid pyrolyzed products of polysiloxane and polycarbosilane were amorphous silicon oxycarbide and nonstoichiometric silicon carbide containing excess carbon, respectively At higher temperature, structure of the amorphous pyrolyzed products started to rearrange and experienced a disorder →order transformation, even crystallized Cristobalite crystallized from SiO〓C〓, and β-SiC also crystallized from SiO〓C〓 provided carbon content of the starting polysiloxane was high enough, while β-SiC crystallized from SiC〓.

当热解温度达1000℃时，聚合物先驱体的无机化过程已基本完成，其陶瓷转化率值趋于稳定，此时聚硅氧烷的热解产物为非晶态的氧碳化硅，聚碳硅烷的热解产物则为含过量碳的非化学计量比的非晶态碳化硅；随着热解温度的升高，非晶态热解产物的结构逐步调整，发生无序→有序的相变，以至析晶。

The resulting materials were characterized by x-ray diffraction, Fourier transform infrared spectroscopy, Nuclear magnetic resonance and Photoluminescence. Those spectra reveal that by adding SiO2 to YAG:Ce precursor, the lattice constant decreases while vacancies are generate due to the co-dopant ions (Si4+) replaces in the place of Al3+ sites of YAG:Ce system. YAG:Ce phosphors with Y3+ dodecahedral site replaced by Ce3+ and diffused effectively as an activator, as a result the photoluminescence intensity increased about ~20-30%.

研究成果显示，掺杂SiO2之YAG：Ce萤光粉经过高温热处理后，由X光绕射、红外线吸收光谱仪以及核磁共振可以得知，当SiO2添加量增加时，YAG：Ce晶格常数会因为Si4+取代Al3+的四面体晶格位置而变小，同时产生将YAG：Ce之铝离子空位缺陷，使活化中心更有效地在YAG：Ce主体中扩散取代Y3+的十二面体晶格位置，提高其发光性质约20~35%。

For spin-3/2 Isingmodel with transverse crystal field,the tricritical phenomena havebeen observed for the square and simple cubic lattice,but there isno tricritical point for the honeycomb lattice.

横向晶场中自旋为3/2的Ising模型中，对于蜂窝点阵晶格来说，系统相变没有三相点，而正方点阵、简立方点阵晶格却有三相点的存在。

The content of the irregular bigger drop phase approached to pyrope. It showed that the crystallization and phase separation mechanics of the glass was the nucleation-and-growth transformation and the crystallization is bulk crystallization. The activation energies of phase separation and crystallization were calculated by the modified Kissinger method, about 310.445 KJ/mol and 249.26 KJ/mol respectively. Using the aluminum hydroxide as the reference, we calibrated the phase separation exothermal enthalpy of the quenched and nucleation treated glass, ca

钠镁侣硅系统徽晶玻瑞快速徽晶化机理的研究利用上式求得混合系统中两相的单位体积相变自由能、两相间的表面能和相互作用参数，分别为刁。6753xlo3了zcm3·、3ss.gozzem3、5.316xlo一JzcmZ和一442 xlol，进而求得球形核的临界半径为nnm，以及一个临界核的成核自由能变化为2石89 x10一14/cm3；成核半径16.5纳米时，球形核稳定存在，实测 1752个球形核中最小核半径为20纳米，与计算结果基本吻合。

More defects forming in the growth plate during deposition almost attribute to the lattice constant relaxation, which makes its lattice constant get larger. However, self-annealing of diamond thick films for long time in the process of deposition makes their lattice constant in their interior and nucleation plate approach its natural value.

化学气相沉积金刚石初期生长的晶体存在大量的空位等缺陷，晶格松弛，在金刚石膜持续生长过程中，形核面和膜内部在高温下发生长时间的自退火，缺陷浓度下降，晶格松弛现象消除，晶格常数变小并趋于理论值。

The role of a-Si:H sublayers is to interrupt the continuous growth and limit the thickness of pc-Si:H sublayers. The a-Si:H sublayers are deposited by two methods, one is fabricated by low hydrogen dilution ratio R = 4, and the second is deposited by pulse-wave modulation plasma with turn-on time (TON = 25 ms) and plasma turn-off time (TOFF = 75 ms).

阻断层所用的非晶矽薄膜采用两种方式制作，第一种是利用低氢稀释比(R = 4)制作的非晶矽，第二种是利用脉波调变电浆开启时间及开关时间分别为25ms及75ms pulse(25ms/75ms所制作的非晶矽。

In this thesis, the heterojunction with intrinsic hydrogenated amorphous silicon thin layer ( heterojunction with intrinsic thin layer: HIT) solar cells are investigated. The solar cell structure of p/i/n are fabricated. The substrate is a typical 4-inch n-type wafer with (100) crystal orientation, 1~10 ohm-cm and about 525 μm thickness. The p and i a-Si:H layers are deposited by a 13.56 MHz plasma enhanced chemical vapor deposition. The i a-Si:H layers are especially deposited by pulse-wave modulation plasma technique with fixed plasma turn-off time toff = 10 ms and changed plasma turn-on time ton= 10 to 40 ms to selectively control the different silicon to hydrogen bonding configurations. The effect of various Si:H bonds on the performance of HIT solar cells are explored.

中文摘要本论文针对异质接面薄本质层(heterojunction with intrinsic thin layer： HIT)太阳电池进行研究，采用一般典型四英吋晶向为(100，厚度约为525 μm，电阻率约为 1~10 ohm-cmn型矽晶圆为基板，制作p/i/n太阳电池，p及i层薄膜以13.56 MHz电浆加强化学气相沈积，i层并采用脉波调变电浆技术，在固定电浆关闭时间toff = 10 ms及改变电浆开启时间由ton = 10 ms 至40 ms条件下制作具有不同矽氢键结微结构的氢化非晶矽薄膜以探讨不同矽氢键结对太阳电池性能的影响。

The structure of ITO films prepared on flexible substrate for different concentration of SnO2 is polycrystalline bixbyite, the crystal lattice parameter of films increases and distortion of crystal lattice is more obvious with the increasing of SnO2 concentration.

用不同掺杂比例的靶材制备的薄膜均为多晶纤锌矿结构，掺杂比例增大，样品的晶格常数变大，晶格畸变明显。

VS crystallization, which has little effect on the elongation growth, takes place on side faces of the whiskers and consequently makes the whiskers radius increase.

从理论上可推导：晶须按 VS生长时，生长速度受原子沿晶须表面向晶须顶端的扩散控制，其生长速度恒定不变；按VLS生长时，固相与液相之间的 Gibbs Thom

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。