受主

In contrast, the concentration of deep defects is very low in annealed undoped InP and the doping of Fe acceptor by diffusion acts as the only compensation centre to pin the Fermi level, resulting in excellent electrical performance.

相比之下，非掺退火半绝缘InP材料中深能级缺陷浓度很低，通过扩散掺入的铁受主作为唯一的补偿中心钉扎费米能级，因而表现出优异的电学性质。

It was shown that the improvement of electric properties in 1%Eu-PZT can be attributed to Eu donor doping, which decreases the concentration of defects such as oxygen vacancies and holes, while the degradation in fatigue and leakage current properties shown in the films with more than 1mol% Eu dopant results from the apparently dominant acceptor doping, which increases the concentration of oxygen vacancies and holes.

结果表明，1mol％Eu施主掺杂，可以减少氧空位以及空穴等缺陷浓度，因此1％Eu-PZT薄膜的极化疲劳和漏电流特性得到明显改善；高于1mol％Eu的受主掺杂作用使薄膜中氧空位以及空穴等缺陷浓度增加，导致PZT薄膜电学性能恶化。

The donor impurity and grain boundary combustion-supporting agent containing acceptor impurity were added successively in the ceramic powder during ceramic powder preparation, both of them can also promote grain growing and semiconductive, and the combustion-supporting agent can be good to form insulation layer in oxidizing process.

采用一次性烧成技术研制了晶界层半导体陶瓷电容器，在瓷料配制过程中先后加入施主杂质和含有受主杂质的晶界助烧剂，两者在还原烧成时促使晶粒生长并半导化，助烧剂在氧化时有利于晶界绝缘层形成。

In the research of prescription, through the experiments we knew the influence from the Nb_2O_5 or Y_2O_3 single donor doped on high-temperature PTC ceramic, and got the curve graph drawing the resistivity and mixing quantity. In order to restrain lead volatilize and mix the rang of donors to neutralization the harmful acceptor impurity in raw materials, adopt the prescription design of Nb_2O_5 and Y_2O_3 double donors-doped. From the result, we know that regulation proportion of Nb , Y double donors, can make high-temperature PTC ceramics semiconducting, the pottery demonstrates good electric performance.

为了能够更有效的抑制铅挥发，并且使掺杂范围能够更好的调节，以"中和"原材料中的有害受主杂质，在配方设计中采用了Nb_2O_5和Y_2O_3双施主掺杂的配方，由结果可知，适当的调节Nb、Y双施主掺杂总量及Nb、Y掺杂比例，可以使高温PTC陶瓷充分的半导化，陶瓷表现出良好的电性能。

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The luminescence properties were investigated with PL and PLE spectra.Emission peaks were at about 450 nm.This emission was ascribed to the recombination between the sulfur vacancy-related electron trap donor having an energy level just below the conduction band and the Ag-related hole trap acceptor above the valence band.

通过发射光谱和激发光谱对产品的光学性质进行研究，发射峰位于450 nm左右，归属于硫空位相关的电子陷阱施主和银相关的空穴陷阱受主的复合；激发峰位于333 nm左右，归属于ZnS基质的带边吸收。

Rarely, ligands are cations and electron -pair acceptors.

配位体很少有阳离子和电子对的受主。

3Genetic analysis showed that there were major gene affecting the panicle exsertion and seed setting rate of low or high temperature sensitive, a lot of weaker plants with cold tolerance have relatively stronger heat tolerance.

遗传研究表明对低温和高温均敏感的穗颈长和结实率受主效基因控制，多数弱耐冷单株的耐热性相对强。

Controlled concentrations of specific donors or acceptors may be intentionally added into materials to form extrinsic semiconductor using various techniques.

控制特定施主和受主原子的浓度，进而运用各种方法能动地填加，这种在半导体材料中加入合金成分的过程称为掺杂。

The study of acceptor Ga open-tube diffusion in SiO2/Si has been carried for several decades, whose pursuing was only to get the diffused surface of high uniformity and reproducibility and impurity distribution in Si which can improvethe electrical performance of the devices, but the various manifestation of Ga segregation effect at the SiO2-Si internal interface and the dynamic intendancy of the impurity concentration variability have not been reported.

关于受主杂质Ga在SiO_2／Si系统进行开管掺杂的研究已有几十年的历史，研究的内容与追求的目标主要集中在如何获得高均匀性、重复性的扩散表面和提高器件电学性能的硅体内杂质分布形式，而对Ga在SiO_2-Si内界面上分凝效应的各种表现，以及由此造成的近硅表面杂质浓度动态变化趋势尚未见报导。

It has been put forward that there exists single Ball point and double Ball points on the symmetrical connecting-rod curves of equilateral mechanisms.

从鲍尔点的形成原理出发，分析对称连杆曲线上鲍尔点的产生条件，提出等边机构的对称连杆曲线上有单鲍尔点和双鲍尔点。

The factory affiliated to the Group primarily manufactures multiple-purpose pincers, baking kits, knives, scissors, kitchenware, gardening tools and beauty care kits as well as other hardware tools, the annual production value of which reaches US$ 30 million dollars.

集团所属工厂主要生产多用钳、烤具、刀具、剪刀、厨具、花园工具、美容套等五金产品，年生产总值3000万美元，产品价廉物美、选料上乘、质量保证，深受国内外客户的青睐