发光性

A novel binaphthalene -based copolymer which containing alternating ionic conductive and light-emitting blocks on the main chain was designed and synthesized in order to overcome phase separation problem between the polar ionic conductive and the apolar conjugated polymers in the traditional light-emitting electrochemical cells.

为克服聚合物电化学发光池中极性离子传导性聚合物与非极性发光聚合物两相分离的矛盾，设计合成了一种聚合物分子主链上同时含有发光链段与离子传导性链段的联二萘功能性发光共聚物 EO- PN。

However, in this paper, the crystal was grown with Bridgman method and under non-vacuum condition.

研究了用非真空铂坩埚下降法生长的CsI晶体的在紫外和γ射线激发下的光致发光和光衰减特征，探索了CsI晶体的发光强度和发光不均匀性与Tl离子含量和分布之间的关系以及改善晶体发光均匀性的措施。

AbstractA novel form of luminescence, solid state cathodoluminescence was discovered when certain organic materials were employed as the active layer in an optimally designed scheme. In this paper we recount the history of the discovery of SSCL, identification of the experimental phenomena, investigation of its universal characteristics, and its potential development.

通过分层优化方案，采用有机场致发光材料，发现了一种新的激发发光方式，即固态阴极射线发光(solid state cathodoluminescence，简称SSCL)，文章主要介绍了固态阴极射线发光的发现历史、发光现象的辨认、发光现象的普适性考察以及其良好的发展前景。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The process of both photoluminescence and electroluminescence,and the property of photoluminescence and electroluminescence on polysilane were introduced.

介绍了光致发光和电致发光的过程及聚硅烷的光致发光和电致发光性的研究进展。

On the research work of the relationship of different configurations of hot cathode and its thermal electron emission density, the area source which can emit uniform electrons is designed.

首先，围绕荧光屏发光亮度均匀性，在分析微光像增强器荧光屏的发光特性及性能参数测试技术的基础上，提出测试荧光屏发光亮度均匀性的方法。

The second experiment is to fabricate white light LED from red and green phosphors pumped by blue light LED. The blue light LED we used in our experiment has the wavelength range between 450 and 452.5 nm, and the chip size is 17 mil *14 mil. There are two kinds white light LED we fabricated in the experiment. There are three blue light LED chips bonded in single package of both kinds package. The different of the both packages is mixed phosphor of encapsulation. One of the experimental devices was encapsulated YAG phosphor mixed silicone to fabricate white light. The other is red and green phosphor mixed encapsulation. The compared and focused parameter was luminous efficiency. YAG phosphor pumped white light has the luminous efficiency 72 lm/W, CRI 70, CIE(0.32, 0.33), CCT 5622°K at the operating current 60mA. On another hand, red and green phosphor pumped white light LED has the luminous efficiency 55 lm/W, CRI 90, CIE(0.31, 0.32), CCT 6479°K at the operating current 60mA. We fabricated the red and green phosphor pumped white light LED, and proved that it could has much higher CRI under similar compared conditions, CIE xy and CCT.

第二个实验是使用蓝光LED晶粒来制作白光元件，蓝光LED晶粒波段范围在450 ~ 452.5 nm，晶粒大小为17*14 mil，以三颗蓝光LED晶粒搭配YAG萤光粉(黄绿光 540 nm)制成白光元件，再以另外三颗蓝光LED晶粒搭配红色萤光粉(613 nm)混合绿色萤光粉(519 nm)制成的白光元件进行发光效率比较；搭配YAG萤光粉的白光元件在注入60 mA的电流时所量测到最大的发光效率是在72 lm/W，演色性数值大约为70，CIE色度座标为(0.32， 0.33)，色温是在5622 °K；而搭配红色萤光粉混合绿色萤光粉的白光元件在注入60 mA的电流时，最大的发光效率在55 lm/W，演色性数值大约为90，CIE色度座标为(0.31， 0.32)，色温在6479 °K；证明了蓝光LED晶粒搭配红色萤光粉混合绿色萤光的白光元件演色性指数可以高达90 以上的结果。

Then, we analyzed the the principles of the white device. Besides, we make this kind of white OLED to match with LCD screen. The maximal active area achieved 3cm×3cm. The average brightness of the device reached 1300cd/m^2 at 10V, and the uniformization of brightness was 90%. So it can be concluded that the white OLED well satisfied the need for LCD-backlighting.

对该白光OLED的发光和电学性能以及发光机理进行了深入的研究和探讨，进而制备了应用于液晶显示背光源的近白光OLED，有效面积达到3cm×3cm，在10V时平均亮度达到～1300cd/平方公尺，发光亮度均匀性为90%，色度均匀性较好，很好地符合了LCD对背光源的要求。

Darkness in Antarctica's Weddell Sea gives this comb jelly a chance to show off its candy-colored bioluminescent cells.

在南极洲的威德尔海洋里，黑暗让这个海鸡冠有机会展示它糖果色彩般的生物发光性细胞。

The number and intensity of peaks of the thermoluminescent cutves are obviously related to stages of gold mineralization:the curve of the early barren quartz shows nearly Symmetric pattern; that of the major stage auriferous quartz is of multimodal type; the curve of the late quartz, low in gold, is marked by unimodal--bimodal type with rather intense luminescence.

石英热发光曲线的发光峰的数量和强度与金成矿阶段有着明显的关系：早期成矿阶段结晶的基本不含金石英，热发光曲线常为近对称的单峰型，发光强度较大；主成矿阶段形成的含金石英，热发光曲线为多峰型，常具最大的发光强度；晚期成矿阶段生成的含金性较差的右英，热发光曲线呈单峰-双峰型，发光强度亦较大。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。