反向电流

A semiconductor diode in which the reverse current varies with the intensity of received light.

反向电流随光的照射强度而发生变化的一种半导体二极管。

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现，随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV，而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A；为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响，我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy， C-AFM)，特别针对单一个V型缺陷进行微观电性之量测。

In this mode, the device will limit the output reverse current.

在这种模式下，器件会限制输出反向电流。

All apparatus and reverse current relay and automatic control have been checked out.

所有的设备和反向电流继电器及其自动控制已检查完毕。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

It is shown that under the action of the shock, the region I current moves towards the midnight, accompanied by a successive occurrence of two FAC structures: an anomalous FAC pair of opposite direction to the region I current and a new region I current of the same direction.

模拟结果表明，在激波的作用下，电离层Ⅰ区电流系统向子夜方向运动，在向阳侧相继出现与原Ⅰ区电流反向的异常场向电流对和同向的新生Ⅰ区电流对。

Measuring the reverse bias current of an APD requires an instrument that can measure current over a wide range as well as output a voltage sweep.

测量APD的反向偏置电流需要一种能够在很宽范围内测量电流并且能输出扫描电压的仪器。

After take analyzed deeply for the opened magnet circuit with FEMM (Finite Element Method Magnetics) we find out the field distributing that is separated into three sections . One is the main area what we called as positive field section. Beside the main field there are tow areas that are called the inverted field sections. Loudspeaker arise a very serious distortion when the voice coil moving into inverted field areas. The direction of induced current in the coil part of entered inverted field area is same with the current driving into loudspeaker so that total currents increas largely and heat increase rapidly. With more coils moving into inverted area the voice coil will take on negative inductance properties. It is the main reason that voice coil is burned by heating with increasing current due to arise negative inductance. So opened magnetic circuit is not suitable for the woofers in which the voice coil have wider displacement range. When using this kind magnetic circuit design, the voice coil moving range should be less than the range of positive field to avoid loudspeaker arise serious distortion and heating. Even though voice coil moving range is in the positive area, loudspeaker will still arise more distortion because the field distribution is very cliffy at tow sides of the positive area and full range of magnetic field distribution is not parallel that will arise distortion. Base on above reasons, opened magnetic circuit is not an ideal magnetic circuit for low-frequency loudspeakers. But it can be used in mid-range or high-frequency productions.

开式磁路是由2片钕铁硼磁铁和主导磁板和导磁垫片组成，我们在实践过程中发现这种磁路结构不适合于低频扬声器的使用，我们通过使用FEMM（Finite Element Method Magnetics）软件包对该磁路进行了分析，该磁路的磁场范围被分成3个区域，其中在主导磁板附近形成一个正向磁场，在正向磁场的两边存在反向的磁场，音圈在工作时有很大一部分进入了反向磁场中，在反向磁场内线圈的感应电流方向与驱动电流方向相同，使得音圈呈现出负感抗特性，由于音圈的负感抗特性引起电流的增加导致音圈发热甚至烧毁，因此在扬声器中使用开式磁路时，音圈的运动范围应控制在正向磁场范围之内，否则音圈运动到反向磁场区域时将会产生很大的失真和发热，即使在设计时已经将音圈的运动范围控制在正向磁场范围之内，由于正向磁场的2个边缘磁场强度衰减太快，同时开式磁路中磁场的分布不是平行的，而是自由发散的分布，这样肯定会导致扬声器的非线性失真，因此我们得到的结论是：开式磁路并不是一个理想的磁路，它不适合于低频扬声器的使用，但它还可以应用于中高频扬声器。

The opened magnetic circuit is composed as tow NdFeB permanent magnets and a top plate without U-yoke. After take analyzed deeply for the opened magnet circuit with FEMM (Finite Element Method Magnetics) we find out the field distributing that is separated into three sections . One is the main area what we called as positive field section. Beside the main field there are tow areas that are called the inverted field sections. Loudspeaker arise a very serious distortion when the voice coil moving into inverted field areas. The direction of induced current in the coil part of entered inverted field area is same with the current driving into loudspeaker so that total currents increas largely and heat increase rapidly. With more coils moving into inverted area the voice coil will take on negative inductance properties. It is the main reason that voice coil is burned by heating with increasing current due to arise negative inductance. So opened magnetic circuit is not suitable for the woofers in which the voice coil have wider displacement range. When using this kind magnetic circuit design, the voice coil moving range should be less than the range of positive field to avoid loudspeaker arise serious distortion and heating. Even though voice coil moving range is in the positive area, loudspeaker will still arise more distortion because the field distribution is very cliffy at tow sides of the positive area and full range of magnetic field distribution is not parallel that will arise distortion. Base on above reasons, opened magnetic circuit is not an ideal magnetic circuit for low-frequency loudspeakers. But it can be used in mid-range or high-frequency productions.

开式磁路是由2片钕铁硼磁铁和主导磁板和导磁垫片组成，我们在实践过程中发现这种磁路结构不适合于低频扬声器的使用，我们通过使用FEMM（Finite Element Method Magnetics）软件包对该磁路进行了分析，该磁路的磁场范围被分成3个区域，其中在主导磁板附近形成一个正向磁场，在正向磁场的两边存在反向的磁场，音圈在工作时有很大一部分进入了反向磁场中，在反向磁场内线圈的感应电流方向与驱动电流方向相同，使得音圈呈现出负感抗特性，由于音圈的负感抗特性引起电流的增加导致音圈发热甚至烧毁，因此在扬声器中使用开式磁路时，音圈的运动范围应控制在正向磁场范围之内，否则音圈运动到反向磁场区域时将会产生很大的失真和发热，即使在设计时已经将音圈的运动范围控制在正向磁场范围之内，由于正向磁场的2个边缘磁场强度衰减太快，同时开式磁路中磁场的分布不是平行的，而是自由发散的分布，这样肯定会导致扬声器的非线性失真，因此我们得到的结论是：开式磁路并不是一个理想的磁路，它不适合于低频扬声器的使用，但它还可以应用于中高频扬声器。

Since Al〓Ga〓In〓P possesses larger valence band difference to GaAs and wider energy gap, minor carrier reverse injection from base and space charge region recombination in the emitter are effectively suppressed in Al〓Ga〓 In〓P/GaAs HBT. Under most circumstances, quasi-neutral base recombination current dominates the base current, and its ratio to collector current varies little with collector current and temperature, thus greatly stabilizes the current gain.

Al〓Ga〓〓In〓P/GaAs HBT由于异质结的△Ev较大，发射区禁带较宽，有力地抑制了基区少子反向注入流和发射区空间电荷区复合电流；在大多数情况下，基极电流以准中性基区复合电流为主，其与集电极电流的比值随集电极电流和温度的变化极小，稳定了电流增益。

The split between the two groups can hardly be papered over.

这两个团体间的分歧难以掩饰。

This approach not only encourages a greater number of responses, but minimizes the likelihood of stale groupthink.

这种做法不仅鼓励了更多的反应，而且减少跟风的可能性。