反向曲线

In the term of unloading and opposite side loading, let the stress-strain curve have the same form of skeleton curve, the curve uses the last unloading point as its starting point, and uses soil's ultimate stress level as its asymptote. Then the hysteretic curve is constructed.

在卸载和反向加载时，采用与骨架曲线相同的函数形式，并以前一次卸载开始点作为起点，以土体的极限应力水平作为渐近线，构造出土体动力本构模型的滞回曲线。

The paper introduces the concept of curve following turnout branch line,the confirmation of head and end,the chord offset calculation of points,the measuring steps in the field.

道岔附带曲线是由道岔侧股引出一与导曲线成反向曲线的曲线，它与道岔有着密切的联系。

The relations of electrophoresis velocity, electroosmosis velocity and electric dispersion velocity are also investigated with these expressions. The results show that this new model offers a better explanation for peak compression effect on the migration behaviour of charged solute in CEC. The retention time will be shorter by peak compression effect, which is similar to a solvent gradients process. The peak compression effect is not steady, and doesn't appear until the conditions are fitted in some special situation.

基于弛豫理论所建立的基本模型，在考虑溶质在两相中皆有可能发生正、反向迁移的情况下，得到了流出曲线一阶原点矩和二阶中心矩的理论表达式，并通过对溶质在两相中电扩散速率与电泳速率、电渗流速率关系的分析结果证实：溶质在固定相表面的电扩散行为可以使其保留变弱，出峰加快；而这种电扩散导致的超常柱效峰的出现具有不稳定性，只有在多方面因素综合影响匹配的情况下才可能出现。

According to the load-displacement curve obtained experimentally from the double holes microshear test, the true stress-strain curve of local material was calculated by means of the inverse methodology of finite element computation.

建立这种方法的有限元模型，根据实验的载荷位移曲线，利用反向有限元计算方法得到局部材料的真应力应变曲线。

In order to control the flow separation by reducing the diffusion factor and enlarging the diameter of inner circle, the meridian plane profile of the return channel was redesigned, which is achieved by substituting arbitrary curve for the circle with no change of the axial length of the stage. Bezier curve with eight parameters was chose to describe the shape of meridian plane profile, and the optimization of the meridian plane profile was implemented combining back-propagation neural network with genetic algorithm.

改进的主要思路是减小弯道前半部分通道的扩压度，并同时加大弯道出口内侧的转弯半径，主要做法是在不增加整级轴向尺寸的前提下，用任意曲线取代传统弯道的同心圆环结构，给定弯道回流器子午型线的外侧型线，采用Bezier曲线对内侧型线的2段曲线进行参数化描述，利用遗传算法和反向传播(back-propagation，BP)神经网络相结合的方法对内侧型线进行优化，得到新的弯道回流器子午型线。

A sufficient length of tangent had better be placed between the reverse curves to facilitate the transition of superelevation .

10反向曲线间最好设置一段足够长的直线，以利于超高的过渡。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Through the analysis about superelevation calculation in middle of S type curve,The author brings forward the improvement method of oblique ridge road arch in convolution engagement of S type curve.

根据S型曲线在超高过渡计算时遇到的具体情况进行分析，提出了对"S型曲线"在两反向回旋线衔接处进行用斜脊式路拱设计的改进方法。

Based on the stress analysis to spired axis mechanism,in the aspect of sliding part which smoothes through alveolus intersection, theresearch of parameters optimization, about the middle alveolus of spired axis andthe dimension of sliding part, has been studied. To the problem that the reverseportion at the both sides of spired axis lashed fiercely and fraies quickly, thearticle finely analyses the best curve of alveolus when adding cushiony spring atthe both sides.

在对螺旋轴机构进行受力分析的基础上，从滑块顺利通过齿槽交叉点的要求方面，对螺旋轴中间段齿槽和滑块的尺寸进行了参数优化分析；针对螺旋轴两端曲线齿槽反向段在高速工作时冲击大、磨损快的问题；从减少滑块在齿槽反向段运动的冲击方面，比较分析了圆弧、抛物线、三角函数等曲线作为螺旋轴齿槽反向段曲线的加速度，提出了较优的(来源：ABCab论bf文网www.abclunwen.com)反向段曲线。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

For a big chunk of credit-card losses; the number of filings (and thus charge-off rates) would be rising again, whether

年美国个人破产法的一个改动使得破产登记急速下降，而后引起了信用卡大规模的亏损。

Eph. 4:23 And that you be renewed in the spirit of your mind

弗四23 而在你们心思的灵里得以更新