反向偏压

The I-V characteristics of the diodes with 100μm diameter indicated that as the densities of V-defects on GaN films increased from 4.1×105cm-2 to 1.03×107cm-2, the Schottky barrier height decreased from 1.44eV to 1.19eV and the reverse bias leakage current at -1V is increased sharply from 10-10A to 10-7A . Further studies on a single V-defect using conductive atomic force microscope demonstrated that the value of forward current biased at 8V at V-defect side-walls appears to be one order higher than that of plain region, indicating that the conductivity mainly occurred at the side-walls of V-defect.

实验结果发现，随著V型缺陷密度由4.1×105cm-2增加至1.03×107cm-2，在氮化镓表面蒸镀镍金属所制成直径为100μm的萧基元件之所属能障从1.44eV下降至1.19eV，而且在-1V的操作下反向偏压漏电流从10-10A急遽的攀升至10-7A；为了了解V型缺陷对厘米尺寸n-GaN萧基元件电流传导机制之影响，我们进一步的利用导电原子力显微镜(Conductive Atomic Force Microscopy， C-AFM)，特别针对单一个V型缺陷进行微观电性之量测。

The conductivity is lineally increased while the decrease of the diameter of nanowire. Meanwhile, the conductivity of oxidized state and reduced state doped with ClO(superscript - subscript 4) ion is lower than that of partial oxidized state by two order of magnitude.

尚未观察到反向击穿现象，可能原因是，在一定的反向偏压下的离子脱嵌使得它由部分氧化态转变为还原态；电导率随纳米线直径减小而线性地增加；以ClO(上标-下标 4)不离子掺杂的氧化态和还原态比部分氧化态的电导率低二个数量级。

If the SMU is set for a positive output voltage, the diodes will be reverse biased.

如果SMU被设置为正向输出电压，二极管将被反向偏压。

The CTIA has a charge-voltage conversion gain of 1.6μV/e~- and helps the Nwell/Psub photodiode to achieve a dark current of 300 fA(3 nA/cm~2) with 300 mV reverse biased voltage.

所采用的改进CTIA结构读出电路功能正确，电荷-电压转换增益为1.6μV/e~-，这种结构令Nwell/Psub光电二极管在300 mV反向偏压条件下，暗电流仅为300fA(3 nA/cm~2)。

A prediction model has been proposed to deal with threshold voltage shift as a function of 1MeV neutron flux and gate oxide thickness, and to deal with room-temperature annealing of threshold voltage shift induced-by 〓Coγ as a function of electric field and gate oxide thickness. The commonness and individuality of MOS device degradation between hot-carrier effect and ionizing radiation were investigated. The dependence of substrate current, gate current and threshold voltage shift due to hot-carrier on gate oxide thickness were simulated with MEDICI-2D simulator. The photocurrents of PN junction and bipolar transistor were studied. Their transient responses on varied bias voltages, pulse durations and absorbed doses were simulated. The influences of NPN base width on base and collector photocurrents were investigated. We also studied 1MeV neutron displacement damage in PN junction, and calculated reverse current leakage under the neutron flux of 2. 67×10〓 per square centimeter. 3 The study of nondestructive screening method for MOS radiation tolerance A theoretical and experimental study of nondestructive screening methods for radiation tolerance of nMOS and pMOS were firstly fulfilled. We determined the informative parameters pertinent to the method and proposed how to deal with experimental data and verify obtained results statistically, as well as make the required steps for nondestructive screening. Based on the experimental data of 180 samples of discrete pMOS devices, the relation between sample quantity and correlation coefficient, screening equation, and other significant results were obtained from the threshold voltage shifts of pre-and post-irradiation samples.

二、分立器件电离和位移辐射损伤响应研究在国内首次开展了电离辐射引起的氧化层阈值电压漂移和退火理论研究，编程计算了1MeV中子引起的MOS器件阈值电压漂移与中子通量及栅氧厚度的关系，计算了〓Coγ光子引起的阈值电压漂移及退火的时效曲线与纵向电场和栅氧厚度的关系等，对评估MOS型集成电路电离损伤和加固方法研究，以及论文中开展的MOSFETs无损筛选方法研究奠定了基础；分析了MOS器件热载流子损伤效应与辐射电离损伤效应之间的异同性，利用二维模拟软件MEDICI-2D模拟了衬底电流和栅电流，在不同栅氧厚度下随栅压的变化曲线，计算了热载流子效应造成的阈值电压漂移，研究结果对当前存在的以热载流子效应研究取代电离辐射损伤实验研究的设想，具有重要的参考价值；开展了PN结和双极晶体管电离光电流研究，计算了不同偏压、不同辐射脉宽和不同吸收剂量下PN结光电流的瞬时响应，计算了不同辐射脉宽下NPN晶体管基极电流和收集极电流的瞬时响应，以及基区宽度对NPN晶体管光电流的影响，研究结果对双极器件抗电离辐射损伤响应及加固方法研究具有重要意义；在国内首次开展了器件位移损伤的理论研究，分析了辐射产生的缺陷对电性能的影响，计算了注量为2.67×10〓cm〓的1MeV中子产生的缺陷对PN结反向电流的影响。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

Lugalbanda was a god and shepherd king of Uruk where he was worshipped for over a thousand years.

Lugalbanda 是神和被崇拜了一千年多 Uruk古埃及喜克索王朝国王。

I am coming just now,' and went on perfuming himself with Hunut, then he came and sat.

我来只是现在，'歼灭战perfuming自己与胡努特，那麼，他来到和SAT 。