双晶的

On the basis of twin-roll thin strip continuous casting experiments and solidification structure characteristic analysis of thin strip and combining with the simulation results of effects of technological parameters, the forming mechanism of solidification structure zone (especially equiaxed crystal zone) on 1Crl8Ni9Ti stainless steel twin-roll thin strip was investigated.

在双辊薄带连铸实验和薄带凝固组织特征分析的基础上，结合对薄带凝固组织区的模拟预测结果，研究了1Cr18Ni9Ti不锈钢双辊薄带凝固组织区的形成机理。结果表明：1Cr18Ni9Ti不锈钢双辊薄带凝固组织中的等轴晶区不但在凝固类型为半固态时形成，在轧制或理想型时也能形成。其形成机理为，熔池中悬浮游离晶体的沉积、聚集以及在枝晶生长前沿的长大和薄带离开二铸辊最小间隙后，薄带/空气界面换热系数骤然降低抑制了柱状枝品的生长，并促使薄带中部未凝固熔体中游离晶体的择优长大

And the devices'properties and improve the properties to prepare the artificial boundary. The bi-epitaxial YBCO superconducting film with 45°grain boundary in a-b plane was made for the first time in China in this article by magnetic sputtering instrument that was designed and fabricated by ourselves. The x-ray θ～ 2θ scan 、Ф scan、rocking curve、non-symmetry diffraction and SEM、 TEM、AES etc. were utilized in the study.

为此，本工作采用自行设计制造的全金属密封超高真空磁控溅射设备，利用x射线θ～2θ扫描、Ф扫描、摇摆曲线、非对称衍射及SEM、TEM、AES等分析测试手段，在国内首次、也是至今唯一的一家，制得a—b平面内具有45°人工晶界的双外延YBCO超导薄膜，并进而得到双外延晶界Josephson结。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Five novel torsion-mirror optical actuators including double-beam thickness differential structure with single torsional axis, double flexible folded-beam structure with single torsional axis, double-beam vertical torsion comb structure with single torsion axis, four-beam differential compound-micromirror structure with double torsional axis and the combined structure of the four basis forms above, are brought forward. All of these devices could be fabricated by the same silicon micromachining process we have developed. The deformation compensation design with local enhancement for the thin torsional beam which is the key structure of these devices is also put forward to improve the reliability. The three-dimension solid model and two-dimension reduced order model of the torsion-mirror optical actuator are established and then the numerical simulations for evaluating the device characteristics of the statics, dynamics, electrostatic field, mechanical and electrostatic coupling, fluid and solid coupling are carried out to optimize the structure design. Furthermore, three optical fibre clamping structures which could be integrated monolithicly are designed and analyzed to improve the optical coupling capability. 4. Three flexible process flows combined with bulk silicon micromachining and surface silicon micromachining are brought forward to fabricate these novel single-crystal silicon or polysilicon torsion-mirror optical actuators by using the same lithography masks for both SOI wafer and regular silicon wafer. A series of important process experiments are carried out to optimize the process parameters and the process flows. Some novel and typical process phenomena which occurred during the microfabrication are analyzed and then the corresponding solutions are put forward. 5. A MEMS dynamic testing system which exploit blur image synthetic technique, stroboscopic image matching technique, stroboscopic mirau microscopic interferometry technique and microscopic laser dopper vibrometer technique is set up to measure three-dimension and six-freedom micro motions of any MEMS devices with nanometer resolution.

在对硅微机械扭转镜光致动器的光机电特性系统地理论研究的基础上提出了硅微机械扭转镜光致动器的结构设计准则。3、提出了单轴双梁厚度差分结构、单轴双柔性折叠梁结构、单轴双梁垂直扭转梳齿结构、双轴四梁差动复合微镜结构以及以上四种基本结构组合后的衍生结构等五种工艺加工技术兼容的新型的硅微机械扭转镜光致动器，对器件关键结构薄厚度、高耐疲劳扭转梁进行了局部加强的变形补偿设计，建立了器件的三维实体模型以及两维降阶模型，对提出的新结构硅微机械扭转镜光致动器进行了系统的静力学、动力学、静电场、力电耦合和流体固体耦合的建模仿真与优化设计，同时设计并分析了三种可实现单芯片集成的弹性光纤定位夹紧结构。4、提出了组合体硅微加工技术与表面硅微加工技术、兼容同一套光刻版图、可分别基于SOI 晶片和普通Si 晶片、适应于制造提出的各种新结构单晶硅和多晶硅硅微机械扭转镜光致动器的三套柔性加工工艺流程，开展了一系列重要工艺步骤的单项工艺试验，对工艺流程与工艺参数进行了优化，针对加工过程中出现的具有普遍意义的典型工艺问题进行了讨论和分析，并提出了解决方法。5、创新性地将模糊图像合成技术、频闪图像匹配技术、频闪Mirau 显微干涉技术与显微激光多普勒测振技术有机结合，建立起了一套周期运动测量与瞬态运动测量相结合、单点运动测量与全视场运动测量相结合、满足不同MEMS 器件各种动态测试要求的集成的MEMS 三维六自由度微运动精密测量系统。

The results indicate that the flow stress of the alloy increases with increasing strain rate and decreasing deformation temperature. The flow stress increases with increasing strain until the stress reaches the peak value, then the flow stress remains constant, which indicates that dynamic recrystallization happens during deformation. The flow behaviors are described by the hyperbolic sine constitutive equation, and the activation energy calculated is 337.75 kJ/mol. The as-forged microstructure consists of refined α2/γ and γ grains, and the grains are much homogeneous than before. The B2 phase distributes uniformly at the grain boundary of α2/γ and γ grains. The B2 phase decreases with increasing deformation temperature.

结果表明：流变应力随着应变速率提高和变形温度降低而增大；在变形过程中，流变应力随着变形量增大而增大，当流变应力达到峰值后趋于平稳，表明合金在变形过程中发生了动态再结晶；热变形过程的流变应力可采用双曲正弦本构关系来描述，平均激活能为337.75 kJ/mol；从合金的组织演化过程中可以看出，合金中不均匀的原始组织得到明显均匀化，变形后的组织是由α2/γ层片晶团和γ晶粒组成的双态组织，在α2/γ层片晶团和γ晶粒的晶界交界处发现分布均匀的B2相，并且随着变形温度升高B2相数量逐渐减少。

Moreover, the hot compressive deformation behavior of the RS/PM AZ91 magnesium alloy and AZ91 alloy matrix composite were also investigated, the conclusions are drawn as follows:1. The processing parameters of the atomization-twin rolls quenching technology were optimized as follows: the diameter of the nozzle 1mm, the wheel velocity 25m/s, the pressure of atomization gas 0.3MPa and Ar gas for melt injection 0.1MPa. The RS AZ91 alloy flakes exhibited fine and uniform microstructures. When the flakes were extruded at 673K, extruded velocity of 0.1mm/min and extrusion ratio of 25:1,the magnesium alloy rods with clean surface, uniform dimension and excellent mechanical properties were obtained.2. The RS AZ91 magnesium alloy powders prepared by atomization-twin rolls quenched technology exhibited fine equiaxed grains with the grain size of 1-3μm, the phase constituent included supersaturate solid solution phaseα-Mg and miner fineβ-Mg_(17)Al_(12) phase. The as-extruded materials also exhibited equiaxed grains with the size of 5-7μm and a large number of fineβ-Al_(12)Mg_(17) and fewer AlMg_2Zn phases were detected in the alloy.

本文还研究了快速凝固/粉末冶金AZ91镁合金热压缩变形流变应力行为，快速凝固/粉末冶金法原位生成Mg_2Si增强AZ91镁基复合材料，经过系统的研究，获得如下结论：1、雾化-双辊急冷法在下列工艺参数组合下：双辊线速度25m/s；喷嘴直径1mm；熔体压射压力0.1MPa；雾化气体压力0.3MPa。，可获得宏观尺寸细小、微观组织均匀细小、综合性能优良的的快速凝固AZ91镁合金细碎箔带，快速凝固箔带在挤压温度为673K、挤压速度为0.1mm/min，挤压比为25：1时，可获得的外表光洁、尺寸均匀、组织性能优异的镁合金棒材。2、雾化-双辊急冷法制备的AZ91镁合金粉末态为细小等轴晶组织，晶粒尺寸1-3μm，组织为α-Mg过饱和固溶体和微量的细小β-Mg_(17)Al_(12)相组成；粉末挤压棒材为等轴晶组织，晶粒尺寸5-7μm，组织中含有大量细小的β-Al_(12)Mg_(17)以及AlMg_2Zn析出相，室温力学性能，抗拉强度383MPa，屈服强度275MPa，断后伸长率7.5%。

Based on the research on the solidifiation of twin-roll casting strip,the analytical model and emulational model of nucleation,the growth of dendrity tip and colunar dendrity transformation to equiaxis dendrityof twin-roll casting strip solidification are established by means of the principle of metal solidification and modern computer emulational technology.

在研究双辊薄带连铸工艺凝固过程的基础上，运用金属凝固的基本原理，并用现代计算机仿真技术建立了双辊连铸薄带凝固的形核、枝晶尖端的生长动力学、柱状晶向等轴晶生长的转变的解析模型及仿真模型，为双辊连铸薄带凝固组织形成的仿真模拟奠定了基础。

The coupling characteristics of the bicrystal Josephson junction with the Fabry-Perot resonator have been investigated experimently, showing that it was greatly affected by the factors such as the location of the sample in the open resonator, the angle between them, the pattern of the junction and the distance between the two reflecting mirrors of the resonator.

重点研究了双晶约瑟夫森结与Fabry-Perot谐振腔的耦合特性，发现放置在谐振腔中的结的位置、角度、结的图形以及Fabry-Perot谐振腔中两镜面间的距离等对耦合都有很大的影响。

The goal of this thesis is to use standard CMOS process to realize a 1.25Gb/s dual-loop data and clock recovery. To attain the aim of low power what we put emphasis on SOC, deep sub-micron CMOS technology is now being considered because of that advantages such as low power, highly integrated capacity. On the other hand, it does not require a frequency divider and we utilize demultiplexer to retime data.

本论文的主题在完成一个双回路的1.25Gb/s资料与时脉回复器，并且完全使用互补式金氧半制程来实现以达到低功率、高度整合的优点，为达到未来系统晶片强调的超低功率，我们更把时脉的频率降低且在不影响速度的前提下达到成效。

The α-BaB〓O〓 crystal is colorless, transparent and without cracking. The cracking problem has been overcome by a special growth procedure. The dislocation density, crystallization morphology and growth habit of α-BaB〓O〓 crystal have been systematically studied by chemical etching method, X-ray laue orientation of synchrotron radiation, double-crystal diffraction topography. The growth striation and irregular dislocation consist of the primary defect in α-BaB〓O〓 crystal. The convex solid-liquid interface is stable during the whole growth process.

在国际上首次采用提拉法生长出φ50×40mm〓的α-BaB〓O〓晶体，生长方向为[0001]，晶体完整、无色透明；提出了三种固相反应的原料制备方法，并保证B〓O〓过量1mol%；采用独特的生长装置和程序有效地解决了α-BaB〓O〓晶体易开裂的问题；首先采用化学腐蚀法、白光X射线衍射术、X射线双晶衍射形貌术等研究了α-BaB〓O〓晶体的位错密度；首次采用同步辐射X射线劳埃定向术研究了α-BaB〓O〓晶体的结晶形态及生长习性；结果发现α-BaB〓O〓晶体的缺陷以位错为主，部分α-BaB〓O〓晶体中存在生长条纹。

The medicinal plant resources of Gentianaceae in Sichuan Province.

四川省龙胆科药用植物资源。

"Some fortuneteller," scoffed the man, I'm the father of THREE children.

" "一些算命"，嘲笑他，"我的父亲有三个孩子。