压

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

The voltage drops of anode,cathode,the voltage between two poles and the voltage drops of generatrix of 80kA pre-baking anode electrobath were tested in Aluminium Electrolysing Works of Shandong Aluminium Industry Co.,Ltd.

对山铝电解铝厂的80kA预焙阳极电解槽的阳极压降、阴极压降、极间电压及母线压降进行测试，并根据测试数据进行电压平衡计算，认为电压分配比较合理，阳极压降偏高。

The piezoelectric motor includes a piezoelectric member which generates a first vibration mode and a second vibration mode simultaneously by an applied power and a frictional member of which a portion is insertedly attached into a concave portion indentedly formed on one side of the piezoelectric member, wherein the frictional member is in an elliptic motion by the vibration generated by the piezoelectric member, so that an influence of the attachment of the frictional member to a resonance frequency can be minimized.

该压电电机包括：压电构件，通过施加的功率同时产生第一振动模式和第二振动模式；摩擦构件，摩擦构件的一部分插入地附着到凹入地形成在压电构件的一侧上的凹入部分中，其中，摩擦构件通过由压电构件产生的振动进行椭圆运动，从而能够使附着摩擦构件对谐振频率的影响最小化。

Results There was no obvious change in the ulstrasonographic characteristics and the pathology of the control group.The diameters,internal echo,the continuity of internal linear echo and epineurium changed correpondingly with time of compression in different model groups.

结果声像图表现：对照组与卡压前正常神经未见明显改变，各卡压组高频超声下均可观察到相应声像图变化，随卡压时间的延长，卡压两端内径逐渐增粗，内部回声逐渐减低，内部线性回声连续性差，神经外膜逐渐增厚。

Based on the item of national high technology development project, the thesis studies the reasonable construction pattern of the tunnel portal, incidence of the micro-pressure wave and the the effect of bell-mouthed hood, lacunaris hood and expansile hood on alleviating the micro-pressure wave in the situations of single line and double line, obtains the relationship between the max micro-pressure wave and the velocity of the train as well as the relationship between the max micro-pressure wave and distance of measuring point at the velocity of 100km/h-550km/h, compares the different alleviative effect of the three different hood to max micro-pressure wave and finally proposes the reasonable construction pattern of the tunnel portal.

本文针对国家高技术研究发展计划(863计划)课题"磁浮交通沪杭线越黄浦江隧道的工程技术问题研究"，在单洞单线和单洞双线两种工况下，对隧道洞口的合理结构形式和影响范围，以及洞口喇叭形入口缓冲段、多孔壁入口缓冲段以及隧道出口膨胀室对减缓微压波的作用进行了研究，得到了磁浮列车速度在100km/h～550km/h时隧道出口微压波最大值与速度的关系以及微压波最大值与测点距离的关系，比较了三种不同形式缓冲结构对微压波最大值的减缓效果，提出了隧道洞口的合理结构形式。

On the aspect of error compensation, the system using the geometric average sound pressure instead of the arithmetic average sound pressure to get the sound pressure of the measurement point. This method not only reduces the high frequency error in the sound intensity measurement, which compensates the finite difference approximation error, but also greatly reduces the computation of the sound pressure spectrum.

误差补偿方面，课题采用几何平均声压代替通常的算术平均声压来计算双传声器法的声场声压值，这样不仅可以有效的减少声强测量中的高频误差，对有限差分误差起到了补偿作用，而且还大大减小了声压谱计算中的计算量。

In the course of the calendering, pressure bearing steel strip temperature is too high, the local Polish film flacherie it appropriate to reduce the pressure of the pressure and temperature light; or possibly finish and calendering technology conditions do not match the business card printing and membership card making products for layer on the surface cools, the same as the above band of light, laymch avulsing is poor technical condition so that it matches on, reducing the calender speed, to improve the optical layer on the light that is between the avulsing: same as above.

温度偏高，使制卡和会员卡制作品在压光过程中脱水过多，含水量降低，因而纸张纤维变脆，应降低压光的工作温度，并采取有效措施，保持制卡和会员卡制作品中—定的含水量；压光中压力过大，使制卡和会员卡制作品的延伸性和可塑性降低，韧性变性，可减少压光中的压力；若因为上光油的后加工适性不良，则应重新选择加工适性较好的上光油；后加工工艺条件选样不合适，可调整后加工工艺条件，使其与制卡和会员卡制作品压光后的适性相匹配。

Dynamic pressure averaging pipe was generally applied to blowing rate measurement in rectangular pipe of power plant, the average velocity of flow in the section was represented by the average dynamic pressure at the line through the geometric center of the cross section, and then the blowing rate was determined.

针对这一问题，本文设计了基于"对数契比雪夫法"的送风流量测量装置，将5支动压平均管置于同一截面，按"对数契比雪夫法"选点位置开孔，把这5支动压平均管的静压输出孔、总压输出孔分别连接到一起作为传感器组件的差压输出，实验表明这种方法使测量准确度明显提高。

In Late Jurassic period (159-135Ma), when the orientation of maximum principal compressive stress was NW direction, the Wuzhangshan granite intruded to upward, accompanied the formation of NW trending Sanrenchang and Huangshuian breccia pipe belts; In the Early Cretaceous period (135-120Ma), when the orientation of maximum principal compressive stress was NNW trending, the second stage of Huashan granite intruded to upward, accompanied the formation of NW trending Qiyugou breccia pipe belts; In 120-105 Ma, when the orientation of maximum principal compressive stress changed to NE direction, the gold-bearing quartz veins and gold orebodies in breccia pipes were formed along the NE trending fractures; In the Middle Cretaceous period (105-85 Ma), when the orientation of maximum principal compressive stress was NEE, the NEE trending Leimengou granite porphyry intruded to upward, accompanied the formation of NEE trending Leimengou breccia pipe belts.

在晚侏罗世(159～135Ma)，构造应力场最大压应力方向为NW向，形成了NW走向的五丈山岩体以及NW向展布三人场、黄水庵两个角砾岩带；在白垩纪早期(135～120Ma)，最大压应力为NNW向，形成了花山岩体第二期上侵，并伴有NW向的祁雨沟角砾岩带；其后(120～100Ma)，构造应力场最大压应力方向变为NE向，形成了NE向含金石英脉及角砾岩体中金矿体；最后(100～80Ma)，形成了雷门沟花岗斑岩以及NEE向展布的雷门沟-杨河沟角砾岩带(区域构造应力场的最大主压应力方向为NEE向)。

Therefore it is necessary to research the mechanism of greensand used for high compacted molding methods thoroughly.This subject is one section of the National Natural Science Foundation subject ""Ivestigation on Predicting Method and Mechanism of Springback for High Compacted Sand Molds"", followed of the other completed one named ""Research on Microdeformation of Molding Sand"". A serious of experiments has been done on the reequipped three axial machine under certain technological conditions, and the mechanics, material science, rheologic science. It is systematically studied that the influences on the springback of sand mold were caused by the main influence factors: pressure, compacted rate and the content of soil. Through the analyzed experiments' data, the experienced stress-strain relationship concerning the main influence factors were obtained;under different technical parameter, the springback and spingback's potential energy are compared, the differences and indifferences between them are found out, and the springback's mechanism is discussed;according to the tests' data of YangGuoping coming from Tinghua University, experienced formula of molding sand's springback displacement is induced, the displacement and springback are compared, the margin of error's reasons are analyzed, and they are tested and verified mutually.

本课题为国家自然科学基金项目"高紧实度砂型预测方法及回弹机理的探讨"的一部分，是已结题的国家自然科学基金项目"铸造型砂微变形的研究"的后继，运用力学、材料学及流变学理论，利用改装的三轴仪，在一定的工艺条件下，作了大量系列实验，系统的研究了压实比压、紧实率和膨润土含量对砂型回弹的影响；对实验数据进行了分析和处理，得出了型砂关于压实比压、紧实率和膨润土含量的本构关系的经验公式；把各工艺参数下的型砂产生的回弹量与回弹势能进行比较，找出两者存在的异同点，并对回弹机理进行了探讨；通过清华大学杨国平的实验数据，推导出型砂回弹位移场的经验公式，并与实验测出的回弹量进行比较，分析误差造成的原因，并互相进行了验证。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。