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It is the first time that these phenomena were observed: Two nuclei are surrounded by plasma and locate at the central of the female gametophyte and the others nuclei are positioned at the fringe of the female gametophyte; Before the pollen tube enters the female gametophyte. the nuclei in chalazal end begin splitting of plasma and form multinuclear cell.4. The pollens of Gnetumc are spherical or applanate with single aperture. The ornamentation of exine is spine. The basis part of spine is lenience and the top part of spine is tip or obtuse sphere.

首次在买麻藤属植物的雌配子体中观察到2个游离核位于配子体的中央位置,且被一团原生质所包围的,其余的游离核位于边缘的现象以及花粉管进入雌配子体前,合点端的核已经发生胞质分裂形成多核细胞的现象 4、买麻藤的花粉近球形或扁平型,有单萌发孔,外壁表面具小刺状纹饰,小刺基部宽大,末端尖或钝圆。

Therefore, the LsHNXs genes were cloned in this study, and their function was studied by RNAi. The main results were shown as follows:1 The conservative sequences of three LsHNXs genes (LsHNX1, LsHNX2, and LsHNX3), and the 3'-terminal specific sequences of LsHNX2 and LsHNX3, were cloned by RT-PCR and 3'-RACE.2 The plant RNAi vectors were constructed and the transformation of Limonium sinense was done. The RNAi lines of three single-genes and one double-gene were obtained and were propogated rapidly for the molecular and the stress tolerance analysis.3 To be compared with wild type, the Na+ and K+ contents secreted by the leaves of LsNHX1 transgenic plants were remarkably higher.

主要实验结果如下:1采用RT-PCR和3'-RACE方法从补血草中克隆获得LsNHXs基因家族三个成员LsNHX1、LsNHX2和LsNHX3的保守区序列以及LsNHX2和LsNHX3的3'端特异序列。2构建植物基因RNAi沉默表达载体并转化补血草,获得三个单基因和一个双基因的RNAi沉默表达植株,快繁转基因植株供分子鉴定和耐逆分析。3LsNHX1转基因植株叶片表面分泌物中的Na+、K+离子含量比野生型对照显著增加;叶组织内Na+离子含量和K+离子含量均略高,但差异不显著;K+/Na+比没有显著差异。4LsNHX2转基因植株叶片表面分泌物中的Na+离子含量比野生型对照有所下降,但差异不显著;K+离子含量比对照显著降低。

Volar Plate Fixation of AO Type C2 and C3 Distal Radius Fractures, A Single-Center Study of 55 Patients.

掌侧钢板固定AO分型C2及C3型桡骨远端骨折,55例患者的单中心研究

Pinout: C High-performance 32-bit RISC Architecture C High-density 16-bit Instruction Set C Leader in MIPS/Watt C Little-endian C Embedded ICE (In-circuit Emulation) 8-, 16- and 32-bit Read and Write Support 256K Bytes of On-chip SRAM C 32-bit Data Bus C Single-clock Cycle Access Fully Programmable External Bus Interface C Maximum External Address Space of 64M Bytes C Up to Eight Chip Selects C Software Programmable 8/16-bit External Data Bus Eight-level Priority, Individually Maskable, Vectored Interrupt Controller C Four External Interrupts, including a High-priority, Low-latency Interrupt Request 32 Programmable I/O Lines Three-channel 16-bit Timer/Counter C Three External Clock Inputs C Two Multi-purpose I/O Pins per Channel Two USARTs C Two Dedicated Peripheral Data Controller Channels per USART Programmable Watchdog Timer Advanced Power-saving Features C CPU and Peripheral Can be Deactivated Individually Fully Static Operation: C 0 Hz to 75 MHz Internal Frequency Range at VDDCORE = 1.8V, 85C 2.7V to 3.6V I/O Operating Range 1.65V to 1.95V Core Operating Range -40C to +85C Temperature Range Available in 100-lead TQFP Package

M5L8253P-5引脚说明: C型高性能32位RISC架构C高密度以MIPS /瓦C小端C十六位指令集C领袖嵌入式冰8 - 16 -位和32位的读写支持256K的片上SRAM的 32位数据总线C单时钟周期存取字节完全可编程的外部总线接口C最大的外部地址空间的64M字节多达8个C芯片选择C软件可编程8位外部数据总线8级优先级,独立可屏蔽,向量中断控制器C四外部中断,其中包括一个高优先级,低延迟中断要求32个可编程I / O口线三通道16位定时器/计数器C三个外部时钟输入C两多用途I / O引脚每通道2个通用同步C两专用外设数据控制器通道每个USART可编程看门狗定时器先进的节能特性 CPU和外设可停用独立全静态工作中:C 0 Hz至75 MHz的频率范围内的VDDCORE = 1.8,85℃2.7V到3.6VI / O的操作1.65V到1.95V范围核心工作电压范围在- 40C至+85 C温度范围内使用的100引脚TQFP封装

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