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功率晶体管

与 功率晶体管 相关的网络例句 [注:此内容来源于网络,仅供参考]

The appearance of heterojunction high electron mobility devices has made the new vigor poured into the development of GaAs MMICs. Pseudomorphic high electron mobility transistors have outstanding high-frequency characteristics, power characteristics and low-noise characteristics. And these merits have made the PHEMTs one of the most promising devices.

异质结高电子迁移率器件的出现给GaAs MMIC的发展注入了新的活力,赝配高电子迁移率晶体管具有优异的高频特性、功率特性和低噪声特性,使其成为现今微波单片集成电路发展中最具应用前景的器件之一。

While power MOSFETs can be tested satisfactorily on most curve tracers, the controls of these instruments are generally labeled with reference to bipolar transistors, and the procedure to follow in the case of MOSFETs is not immediately obvious.

虽然功率MOSFET,可在大多数测试曲线示踪剂令人满意,这些文书的控制一般都标有参考双极晶体管和程序按照案件的MOSFET不会立即明显。

Therefore the high-power microwave devices-- Metal Semiconductor Field Effect Transistors based on GaAs material have received increased attention. The large signal analysis is an attractive topic because it is an important and tough issue.

在微波功率器件中,GaAs金属半导体场效应晶体管的应用比较成熟,但是对于微波大信号的研究,一直是人们关注的问题,也是难度较大的问题。

The N-and P-channel Y Low power enhancement mode transistors provide a symmetrical cir-Y High noise immunity cuit with output swings essentially equal to the supply voltage.

氮和磷- y频道低功率增强模式晶体管提供对称内装y高噪声免疫电路与输出摆幅基本上等于供电电压。

A radiation hardened N channel Si power device——VDMNOSFET (Vertical Double Diffused Metal Nitride Oxide Semiconductor Field Effect Transistor) is fabricated by using a double layer (Si 3N 4 SiO 2) gate dielectric and a self aligned heavily doped shallow P + region.

采用 Si3N4- Si O2 双层栅介质及自对准重掺杂浅结 P+区研制出了一种抗辐射加固功率器件—— VDMNOS-FET (垂直双扩散金属-氮化物-氧化物-半导体场效应晶体管)。

In the early 1950s, a new technology based on semiconductor construction would replace triodes with transistors, in cases where low-power amplification was needed.

在上个世纪五十年代初期,基于半导体结构的新技术,在需要低功率放大的情况下可用晶体管替换三极管实现这一功能。

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