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功率晶体管

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By means of the ballast effect of the vertical resistor of this non-crystalline Si layer, inject current crowding at emitter edge can be overcome.

与通常晶体管相比,FFJ的有效发射极面积对基极面积之比值提高2~3倍,输出功率-阻抗乘积提高5~10倍。

The amplifier itself consists of a cascade of RC neutralized common-emitter stages each with primary tuned interstage transformer.

放大器由中和了的共发射极级链接而成,级间用初级调谐的变压器耦合,叙述分三个部分:第一部分将中和了的共发射极电路用近似等效电路表示,第二部分分析级间网络,将晶体管放大器的功率增益表示成预给的频率函数后,就能导出各级间网络的谐振频率和Q值等,从而求出线路元件的数值。

D. insulated gate transistor dual-carrier power module and power module.

D。 绝缘闸双载子晶体管功率模块及电源模块。

A novel zero-voltage and zero-current resonant pole soft-switching inverter was proposed to achieve zero- voltage and zero-current switching simultaneously when main power devices turn-on and turn-off. Therefore, turn-on capacitive losses could be reduced for devices which the intrinsic capacitor value cannot be neglected. Additionally losses caused by the tail current can also be reduced, when IGBTs are used as main switches.

提出一种新型的零电压零电流谐振极型软开关逆变器,可以在主功率器件开通和关断时,同时实现零电压和零电流,因此对于内部电容不能忽略的器件,可减小容性开通损耗,当绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)作为主功率器件时,也可减小拖尾电流引起的损耗。

Major products of electron industry have bipolar digital IC, small exterior plastic sealing IC, single slice IC, integrated function module, thin and thick module composed IC, integration pressure sensor, semiconductor plastic down-lead frame, bipolar electrostatic induction transistor BSIT, power commutation diode SBD, microwave scanning frequency test system, ultrahigh frequency test system, waveguide coaxial system and satellite communications aerial etc.

电子行业主要产品有双极型数字集成电路、小外型塑封集成电路、单片集成电路、集成化功能模块、薄厚膜混合集成电路、集成压力传感器、半导体塑料引线框架、双极静电感应晶体管 BSIT 、功率肖特基整流二级管 SBD 、微波扫频测试系统、超高频测试系统、波导同轴系统、卫星通讯天线等。

The transistor can go from an OFF condition to an ON condition with great speed and minimal power.

晶体管能以极快的速度和极小的功率有"关"的状态转到""的状态。

Monolithic Microwave Integrated Circuit; Pseudomorphic High Electron Mobility Transistor; GaAs; Nonlinear Model; Power Amplifier

微波单片集成电路;赝配高电子迁移率晶体管; GaAs;非线性模型;功率放大器

Using 0.15-micron-gate-length GaAs pseudomorphic high-electron-mobility-transistor device technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a signal gain of 20 decibels with +28 dBm P1dB compression point.

采用0.15微米的高电子移导率场效晶体管器件技术的这一功率放大器的频率范围为17~25 GHz,增益为20分贝(相对+28 dBm P1dB压缩点)。

By using VDMOS field-effect transistorsas the switch elements, the electronic controlling circuits of the PM brushless DC motor, including the main power switch circuit , power driving circuit, absorption circuit, and logic controlling circuit, are designed.

用 VDMOS场效应晶体管作为开关元件,设计了稀土永磁无刷直流电机的电子控制线路,主要包括:功率开关主回路,功率驱动回路,吸收回路,逻辑控制电路。

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

所有这些功率MOSFET的设计,例如开关稳压器的应用,开关转换器,电机驱动器,继电器驱动器,驱动器和高功率双极晶体管的开关速度和低要求高栅极驱动力。

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