刻

The thermally cured Etch-resist ink (2) was then removed from the unetched areas of copper by immersing the film in an aqueous solution of 5% by weight caustic at a temperature of 50° C.

的热固化刻蚀抵抗油墨（2）然后从铜的未腐蚀× 100区除名的沉浸在了5％水溶液的电影，由重量烧碱为50 ° C的温度由此产生的FR4电路板蚀刻水冲洗和干燥的空气在25 ° C

The etching solution is composed of Potassium hydroxide, Sodium hydroxide, and additives. The window of demanding is crosshatched in certain conditions on polyimide flexible substrate.

采用化学蚀刻法，蚀刻液由氢氧化钾、氢氧化钠和添加剂组成，于一定的工艺条件下在挠性印制电路板聚酰亚胺基材上开出所需大小、形状的窗口。

The etching solution is composed of Potassium hydroxide , Sodium hydroxide and Additives . The window of demanding size is crosshatched in certain conditions on PI flexible substrate .

采用化学蚀刻法，蚀刻液由氢氧化钾，氢氧化钠和添加剂组成，在一定的工艺条件下在挠性印制电路板聚酰亚胺基材上开出所需大小，形状的窗口。

SI analysis concluded that this bird's beak is the result of TIL and high-k etches undercutting the polysilicon.

SI分析的结论是&鸟嘴&是多晶硅蚀刻时TIL与high-K也被蚀刻侧凹的结果(与原文的字面意义略有出入---译者)。

The etching liquid etches the gold or gold alloy layer existing between the columns evenly.

该蚀刻液均匀蚀刻柱之间存在的金或金合金层。

The etching liquid etches a gold or gold alloy layer formed on the surface of a substrate for a semiconductor device or a liquid crystal device evenly.

该蚀刻液均匀蚀刻在半导体器件或液晶装置用基片的表面上形成的金或金合金层。

This makes it possible to produce dielectric capacitor layers of any desired thickness using materials which can be selected as desired. In particular, this has the advantage that via etches can be carried out significantly more easily than in the prior art, since it is not necessary to etch through the residual dielectric capacitor layer above the metal tracks.

此系使得有可能利用可依所需而进行选择的材质来产生任何所需厚度的介电电容器层，特别的是，本发明所具有的优点是，相较于已知技术，通孔蚀刻系可以简单许多的方式加以进行，因为其不需要蚀刻穿透在该金属轨道上方的剩余介电电容器层。

The barrier layer is removed, and the walls of the trench are etched in a manner that etches the lesser doped regions of the substrate at a higher rate than the higher doped regions of the substrate to widen and lengthen the trench and to form rounded corners at the intersections of the walls of the trench.

除去阻挡层，并以比衬底的更高掺杂区域更高的速率蚀刻衬底的更低掺杂区域的方式蚀刻沟槽壁，将沟槽加宽和加长并在沟槽壁的相交处形成圆角。

In LOCOS dry etching,silicon loss maintained at about 100 - 200 A,pad oxide layer reduced from 300 A to 135 A,and LOCOS oxide thickness change from 5000 A to 4000 A.

在LOCOS干法刻蚀时，对硅的刻蚀深度保持在100-200左右，衬垫氧化层从300减少到135，LOCOS热氧化厚度从5000？

The searching range of the pattern being photolithographed is automatically optimized,thus the computer operation time can be saved.

该算法可以自动优化光刻图案的寻找范围，节省计算机在寻找光刻像素时的运算时间。

Breath, muscle contraction of the buttocks; arch body, as far as possible to hold his head, right leg straight towards the ceiling (peg-leg knee in order to avoid muscle tension).

呼气，收缩臀部肌肉；拱起身体，尽量抬起头来，右腿伸直朝向天花板（膝微屈，以避免肌肉紧张）。

The cost of moving grain food products was unchanged from May, but year over year are up 8%.

粮食产品的运输费用与5月份相比没有变化，但却比去年同期高8％。