刻

The present invention is process of separating and assembling metallic single wall carbon nanotube and semiconductive single wall carbon nanotube synchronously. The process includes the following steps: photoetching silica substrate to prepare Au electrode, cutting intervals in the electrode with focused ion beam, soaking the electrode in DMF solution of single wall carbon nanotube, and applying electric field of 2-8 V magnitude and 1-10 Hz frequency.

本发明的目的在于提供一种金属性和半导体性单壁碳纳米管的同步分离与组装方法，该金属性和半导体性单壁碳纳米管的同步分离与组装方法包括如下步骤：通过常规光刻在含二氧化硅的衬底上制备金电极的步骤；利用聚焦离子束在电极上刻出若干个间隙的步骤；将上述电极浸入到单壁碳纳米管的DMF溶液的步骤；施加大小为2～8V、频率为1～10Hz的电场的步骤。

The invention discloses a method to integrate single CMOS with bulk silicon microelectromechanical system, its technical project: 1 forming isolating groove: adopting deep-groove etching, and SiO2 and polycrystal silicon filling to realize the insulation of MEMS structure and CMOS circuit; 2 making standard CMOS circuit; 3 using SiO2 and Si3N4 as mask, etching silicon on the back until exposing SiO2 at the bottom of the isolating groove, to complete the thickness control for MEMS silicon structure layer; 4 completing metalizing the CMOS circuit and masking the MEMS structure: MEMS structure region uses Al as mask and CMOS circuit region uses thick photoetching glue as mask, using DRIE to release silicon structure.

本发明公开了一种将单片CMOS与体硅微机械系统集成的方法，其技术方案为：1形成隔离槽：采用深槽刻蚀，SiO 2 和多晶硅填充，实现MEMS结构和CMOS电路的绝缘；2完成隔离槽后进行标准CMOS电路的加工；3用SiO 2 和Si 3 N 4 作掩膜，从背面腐蚀硅，直至暴露出隔离槽底部的SiO 2 ，完成MEMS硅结构层的厚度控制；4完成CMOS电路金属化和MEMS结构掩膜：MEMS结构区用铝作掩膜，CMOS电路区用厚光刻胶作掩膜，用DRIE释放硅结构。用本发明方法不仅获得了较大的质量块，而且用本发明较高的深宽比制作出的结构电容，同时实现了体硅微机械与CMOS电路的集成，显著提高MEMS传感器的精度和稳定性，具有前沿性和重要实用价值。

The technology is resolution-independent,i.e.,it does not contain any critical photolithographic steps.

该技术的特点是它与光刻分辨率无关，即不需要高分辨率光刻技术。

A photolithographic mask is used in a photolithography imaging system for patterning a semiconductor wafer.

一种在光刻成像系统中应用的用于形成半导体晶片的图形的光刻掩模。

The QVBA key micro-machined technology are also developed in this paper, such as: single step double sides multilayer photolithographic process, quartz crystal anisotropic etching process.

在仿真分析基础上，完成了石英振梁加速度计的设计及关键微加工工艺研究，包括：单步双面多层光刻工艺、石英晶体各向异性刻蚀工艺等。

The most significant advance of the work described in this thesis is as follow.1 The silica microdisk optical resonator which exhibit whispering-gallery-type modes with quality factors 1×10~5 have been fabricated firstly with standard photolithographic techniques and dry etching in China.

论文主要工作和创新之处包括：1在国内首先通过光刻方法以及干法刻蚀方法得到高Q值微盘谐振腔，微盘腔的Q值达到约1×10~5。

To some extend, photolithography area controls the performance of whole semiconductor manufacturing system.

在整个半导体晶圆制造系统中，光刻区是重入次数最多的区域，光刻设备被认为是利用率最高的瓶颈设备，并在很大程度上控制着整个晶圆制造厂的系统绩效。

A dynamic scheduling method based on Kohonen neural network is proposed in this paper, to accommodate the complex changes of state in photolithography area.

本文所做的主要工作为：(1)针对光刻区的不同状态，提出了基于Kohonen神经网络的晶圆光刻流程动态调度方法，以适应生产过程中的复杂变化。

Imprint lithography, as one of the next generation micro-fabrication processes,is regarded as an alternative to the traditional photolithography technologies.

压印光刻作为未来微细制造的工艺方法之一，被认为是解决传统光学光刻分辨率瓶颈的一种发展方向。

To build the complex CPU of a computer on a single silicon chip using photolithography and chemical etching

由于采用光刻法和化学蚀刻法可以将一台计算机中的complex CPU建造在单个的硅片上如今。。。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。