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In particular, the time-domain electric integral equation of second-order time differential coefficient is calculated by an explicit MOT solution.

本文利用时域矩量法及其与时域有限差分方法的混合法分析计算目标电磁辐射与散射问题。

The effect of spectra resolution on the detected characteristic absorption structure of gaseous pollutants and the variation of differential cross section of gaseous pollutants with the change of resolution are studied.

主要研究了光谱分辨率对污染气体被检测到的特征吸收结构形状的影响，以及差分吸收截面随分辨率的变化趋势，从而确定了光谱分辨率对污染气体最低可检测浓度的影响，通过研究分辨率与光强的关系，确定了分辨率与信噪比的函数关系式，得出了DOAS测量NO2，O3和SO2的最佳信噪比范围，对多种污染物标准气体进行了同时监测，计算出标准气体在不同光谱分辨率下的测量误差，确定了对NO2，O3和SO2监测的最适用的分辨率范围。

Among used machine learning methods, the gradient descent method is widely used to train various classifiers, such as Back-propagation neural network and linear text classifier. However, the gradient descent method is easily trapped into a local minimum and slowly converges. Thus, this study presents a gradient forecasting search method based on prediction methods to enhance the performance of the gradient descent method in order to develop a more efficient and precise machine learning method for Web mining.However, a prediction method with few sample data items and precise forecasting ability is a key issue to the gradient forecasting search method. Applying statistic-based prediction methods to implement GFSM is unsuitable because they require a large number of data items to model a prediction model. In the contrast with statistic-based prediction methods, GM(1,1) grey prediction model does not need a large number of data items to build a prediction model, and it has low computational load. However, the original GM(1,1) grey prediction model uses a mathematical hypothesis and approximation to transform a continuous differential equation into a discrete difference equation in order to model a forecasting model.

其中梯度法是一个最常被使用来实现机器学习的方法之一，然而梯度法具有学习速度慢以及容易陷入局部最佳解的缺点，因此，本研究提出一个梯度预测搜寻法则(gradient forecasting search method， GFSM)来改善传统梯度法的缺点，用来提升一些以梯度学习法则为基础的分类器在资讯探勘上的效率与正确性；而一个所需资料量少、计算复杂度低且精确的预测模型是梯度预测搜寻法能否有效进行最佳解搜寻之关键因素，传统统计为基础之预测方法的缺点是需要较大量的数据进行预测，因此计算复杂度高，灰色预测模型具有建模资料少且计算复杂度低等优点，然而灰色预测理论以连续之微分方程式为基础，并且透过一些数学上的假设与近似，将连续之微分方程式转换成离散之差分方程式来对离散型资料进行建模及预测，这样的作法不尽合理，且缺乏数学理论上的完备性，因为在转换过程中已经造成建模上的误差，且建模过程仅考虑相邻的两个资料点关系，无法正确反应数列未来的变化趋势。

The differential and partial wave scattering cross sections of Ne-H2(D2,T2) collisions have been calculated by close-coupling approximation method using Tang-Toennies potential model at the incident energy of 83.8 meV.

使用密耦近似（Close-Coupling）方法、采用Tang-Toennies势模型计算了惰性气体原子Ne与H2分子及同位素D2分子在碰撞能量为83.8 meV时的微分散射截面及分波截面，并与实验值和文献值进行比较。

Using the method we calculate the 〓 elasticdifferential scattering cross section, excitation differential scattering crosssection, and excitation cross section of electron collision with 〓 We transform the electron and molecule problem into electron problemby Born-Oppenheimer approximate. Mr Rossi, Dr. the Flinders University ofSouth Australia, calculated electron collision with molecule, but theexchange term he used become bigger and bigger as incident energyincreases, it is unreasonable, besides, the potential of electron and nucleus heused is somewhat rough. At present we correct these two terms. The potentialconsists of static potential, exchange potential, polarization potential.

电子与分子的碰撞过程的相互作用势主要是由静态势、交换势和极化势三部分决定的，这里对这三部分在动量空间中进行分波展开，推导出易于计算的表达形式，根据这些公式，并参考Rossi的弹性碰撞程序编写了计算电子与分子碰撞激发截面的程序，利用程序计算出势能矩阵元，通过求解Lippmann-Schwinger方程求得T矩阵元，便可求得散射截面。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

We have indications not to be mistaken of a state of social affairs in which Conveyances and Contracts were practically confounded; nor did the discrepance of the conceptions become perceptible till men had begun to adopt a distinct practice in contracting and conveying.

我们有不可误解的有关社会事务状态的各种迹象，证明"让与"和"契约"在实际上是混淆不分的；同时，直到人们在缔约和让与中采用一种各别的实践前，这两个概念的差异从来没有为人们所领会到。

According to that the eigenstates of applied quantum systems, are with discrete or continuous spectrum construction, quantum information is divided into two types of discrete variables and continuous variables. They have different features and application potentials. Both of them are parallelly developing.

量子信息科学根据所利用的量子变量的本征态具有分离谱或是连续谱结构区分为分离变量与连续变量两大类，连续变量和分离变量量子信息有着不同的特点与应用前景，各具特色，目前正在平行发展。

Part One is the introduction, which examines Amartya Sen"s economic ethics thought along the developing line of the unitive and disjunct relation of economics and ethics. It also presents Amartya Sen"s unique view on the two subjects.

第一部分为对阿马蒂亚·森的经济伦理思想历史渊源的分析，该部分以经济学与伦理学之间的统、分关系的变化为主线，简述了经济伦理史上的经济学与伦理学的关系并以此引申出了阿马蒂亚·森经济伦理思想中对二者关系的独特见解。

Finally, the theory and method for distinguishing between contamination and flaws was presented.

最后提出了污染物与疵病区分的理论与方法。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。