击穿

In evaluating the dielectric strength of gases and gas mixtures, the com- monly used method, i.

通常采用的评定气体和混合气体耐电强度的方法，即将均匀场间隙中测得的击穿电压与参考气体相比，实际上并不能反映不同气体在工程应用中绝缘性能的优劣。

Experimental results show that the dielectric strength increases significantly when the Cr phase is selectively strengthened.

例如，CuCr触头合金是由Cu相和Cr相组成的，而CuCr合金在真空中的电击穿首先选择发生在耐电压能力较弱的Cr相的表面［4］。国外研究者也有类似的研究结果［5］。

In the case of dielectric breakdown, a different type of acceleration occurs

在介质击穿的情况下，出现了一种不同类型的加速。

A model of dielectric breakdown in SiO2 has been proposed and theory analysis is also made.

建立了SiO2介质击穿的物理模型并给出了理论分析。

The new diode should be of the same specifications as the one broken down.

新的二极管应当和被击穿的二极管具有相同的规格。

Silicon carbide is a promising semiconductor with wide band-gap, highsaturation electron drift velocity, high thermal conductivity and high breakdownelectric field.

碳化硅是一种具有宽禁带、高电子饱和漂移速度、高的热导率以及高的临界击穿电场等优异特性的新型半导体材料。

SiC is a very promising material for high temperature, high power, high frequency, and radiation application because of its superior properties such as wide band gap, high critical breakdown field, high thermal conductivity and high saturation electron drift velocity.

SiC材料具有宽禁带、高临界击穿电场、高热导率、高载流子饱和漂移速度等优良特性，这些特性决定了它在高温、大功率、高频和抗辐照等方面的有着广泛的应用前景。

The carbon based materials have low electron affinity even negative electron affinity,and have the good ability of eradiating electrons in electric field.

其中非晶碳膜具有好的化学稳定性和热稳定性、高的熔点和热导率、小的介电常数、大的载流子迁移率和高的击穿电压，是一种很有前途的场发射冷阴极材料。

These materials have excellent chemical and thermal stability, high melting point, high thermal conductivity, high breakdown voltage and large carrier mobility rate especially the smaller electron affinity and potential or even a negative electron affinity, and the situation has greatly reduced the market launch of the threshold voltage, therefore, Field emission of such material will have a very vast potential for development and application prospects.

这些材料具有良好的化学与热稳定性、高熔点、高热导率、高击穿电压及大的载流子迁移率，特别是较小的电子亲和势甚至是负的电子亲和势，大大降低了场发射的阈值电压，因此，这类场发射材料将有着极为广阔的发展潜力及应用前景。

Silicon carbide is a promising semiconductor with wide band-gap, high saturation electron drift velocity, high breakdown electric field and high thermal conductivity.

碳化硅是一种新型半导体材料，具有禁带宽、电子饱和迁移速度高、击穿电场强度高、热导率高等特点。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷