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The experiments show that the microstructure of annealed sample is favourable to improving reverse breakdown voltage.

实验表明,退火后样品的微观结构有利于提高反向击穿电压。

The effective channel mobility of4H-SiC MOSFETs is increased significantly by high temperature anneals in nitric oxide.4H-SiC MOSFET with hydrogen postoxidation annealing has a lower threshold voltage of3.1V and a wide gate voltage operation range in which the inversion channel mobility is more than100cm 2 /Vs.

SiC的雪崩击穿电场是Si的十倍,因此,理论上SiC单极功率器件的导通电阻可以比Si器件的低400倍,但在6H-SiCMOS结构中,由于反型层的电子迁移率较小,沟道迁移率测量值仅为40~50cm2/Vs,远远低于6H-SiC的体迁移率400cm2/Vs眼1熏2演,限制了SiC功率MOSFET的导通电阻Ron。

Degaussed resistance from the working principle is not difficult to see, when the hot resistance degaussed smaller resistance, or internal breakdown degaussed resistance, resistance become smaller, you can think of or damage to non-performing degaussing resistor.

从消磁电阻的工作原理不难看出,当消磁电阻热态阻值变小,或是消磁电阻内部击穿,阻值变小,则可以认为消磁电阻不良或损坏。

After such a plate washer deionized water and de-static treatment, corrosion and breakdown will not circuit boards.

这样的洗板水经过去离子和去静电处理,不会腐蚀和击穿电路板。

A few months earlier, at an event in California, the comedian Robin Williams had lampooned the NRAs opposition to banning cop-killer bullets with a good line: Of course we can't ban them.

威廉姆斯讽刺全国步枪协会反对禁止可以击穿警察犯弹衣的了弹的法案的做法,他说了一句很好笑的话:我们当然无法禁止这些子弹。

The computed result indicated that the overvoltage of no-fault phase was determined by the instant voltage, when there is reigniting of fault phase.

仿真结果表明,健全相的过电压值取决于故障相电压发生重燃时刻的瞬间电压值,重燃击穿电压越大,一定时间内电弧重燃的次数越少。

The number of restrikes can be decreased significantly by using a bipolar load current arc conditioning.

只有通过两个极性负载电流的电弧老炼才能有效地减少真空开关的弧后延时重击穿现象。

In this thesis, the load current arc conditioning effect on the postarc restrikes has been investigated by using a synthetic circuit, experiments show that the restrikes can be decreased by using arc conditioning process with polarity effect.

本文在合成回路上研究了负载电流电弧的老炼作用,发现负载电流电弧老炼可以明显地降低弧后延时重击穿率,这种老炼具有极性效应。

Moreover, it shows that with air vents opened to 20%, 60% and 100%, the arc can arrive in the splitter plates successfully under 10mT magnetic field without restriking.

此外,还发现当磁场为10mT时,在出口面积分别为20%、60%和100% 3种情况下电弧均可以顺利到达栅片,在运动的过程中没有电弧重击穿现象的发生。

While using this testing system to observe arc moving in the limiter, it was found that the local restriking near the entrance to iron chute was the cause of arc voltage drop.

利用该测试系统,在研究限流器中电弧运动过程时发现,存在于栅片入口附近空间的局部重击穿现象,是导致分断过程中电弧电压跌落的重要原因。

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In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是,在否定句或疑问句里,这种带有"do"的方法表达的效果却没有什么强调的意思。

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