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Using Landauer-Buttiker formulism the analytical expressions for the electronic transmission probability as a function of incident electron energy and geometry parameters are obtained, with which the conditions for interference maximum and minimum of electron wave are indicated analytically and verified numerically.

用Landauer-Büttiker公式解析地计算出了两种情况下系统电子透射率作为入射电子能量和系统几何参数的函数表达式,从而分析得出了由于量子干涉产生透射极大与极小值时入射能量与几何参数所满足的条件关系并得到了数值验证。

It is composed of a compact normal incidence multiplayer telescope and a grazing incidence Wolter-I telescope.

该望远镜是把小结构尺寸的卡塞格林型极紫外波段正入射望远镜放置在软X射线波段,并由常用的Wolter Ⅰ型掠入射望远镜的中心部分组成。

It reformed the coventional grazing incidence method of reflecting x ray, and made it possible to reflect x ray in normal incidence way.

它从根本上改变了传统的掠入射反射x光的方法,使正入射反射x光成为可能,并极大的促进了x光学的发展。

ABSTRACT The optimum choice of grazing incidence on the basis of the demands soft X-ray normal incidence microscopic optics is presented.

摘 要 依据正入射软X射线显微成像系统对聚光镜的要求,论述了采用掠入射聚光镜是最佳选择。

The optimum choice of grazing incidence on the basis of the demands soft X ray normal incidence microscopic optics is presented.

依据正入射软X射线显微成像系统对聚光镜的要求,论述了采用掠入射聚光镜是最佳选择。

It reformed the coventional grazing incidence method of reflecting x ray, and made it possible to reflect x ray in normal incidence way. It moves x ray optics forward greatly.

它从根本上改变了传统的掠入射反射x光的方法,使正入射反射x光成为可能,并极大的促进了x光学的发展。

It is the first time to be brought out and designed that the solar X-EUV imaging telescope integrates the grazing mirror and the normal incidence mirror.

太阳X-EUV成像望远镜在国际上首次提出并设计实现单台设备集成掠入射望远镜和正入射望远镜系统,分析表明,该设计方式完全满足应用要求。

Imaging quality of a single mirror and two mirrors in the case of grazing incidence is discussed. The focal length, field obliquity and diaphragm position of KBA microscope are analyzed.

详细分析掠入射情况下单镜及双反射镜的成像特性,对组成KBA显微镜的反射镜在掠入射条件下的焦距、视场倾斜、光阑位置等进行研究。

It is the first time to be brought out and designed that the solar X-EUV imaging telescope integrates the grazing mirror and the normal incidence mirror. This design can fully meet the applied requirements according to simulation.

太阳X-EUV成像望远镜在国际上首次提出并设计实现单台设备集成掠入射望远镜和正入射望远镜系统,分析表明,该设计方式完全满足应用要求。

AlN MSM devices were fabricated on AlN epitaxial thin film deposited on GaN/Sapphire substrates using helicon sputtering system at the low temperature of 300°C. The device characteristic was found to be improved by in situ metallization of Al electrodes. The extremely low dark current (1.39pA at 20V), the ideal factor (1.0125) and the Schottky barrier height (0.916eV) are superior compared to those of AlN MSM in the literature. When the device was illuminated by the 150W D2 lamp, the ratio of the induced photocurrent to dark current is more than 2 orders of magnitude. The illumination effect also shows the linear relationship between the radiation power and the photo current for the MSM devices, indicating the potential applicability for deep UV sensors.

氮化铝金属-半导体-金属光侦测器则是用In situ metallization制程,利用低温回旋溅镀法在氮化镓/蓝宝石基板上沉积之氮化铝,再直接溅镀金属铝作为指叉电极,比较目前文献制作出来的氮化铝MSM元件,可得到很好的元件金半接面之理想因子1.0125,算出萧特基能障高度为0.916eV,并有很低的暗电流为1.39 pA,提升了元件的特性,使用150 W氘灯入射,光暗电流差距可到两个order,且元件之光电流与入射光功率呈线性,显示所制作之氮化铝MSM元件,很适合针对深紫外光波段侦测。

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