光电流

In addition, for the first time, we observed that 〓 is a good acceptor and cansensitize the cathodic photocurrent.

另外，我们还首次发现〓的存在可以敏化阴极光电流的产生，它是一个好的电子受体。

Through fluorescence spectrum and photocurrent action spectrum measurements,we found that fluorescence signal of CdS weakened after TiO_2 film was deposited CdSby electrodeposition, and accordingly improved photoelectric capability of TiO_2 filmand achieved sensitization action.

通过荧光光谱和光电流作用谱结果表明在TiO_2薄膜电极上采用电化学沉积法沉积CdS之后，CdS的荧光信号减弱，从而提高了TiO_2薄膜电极的光电性能，起到了敏化的作用。

After UV irradiation and the decomposition of diazium group, the linage of the films will be converted from ionic bond to covalent bond, result in the films could resist the etching of polar solvents and strong electrolyte.

利用传统的三电极光电转换装置，以0.5M KCl溶液为支持电解质，测试了含聚苯胺衍生物超薄膜的光电转换性能，并考察了影响光电流产生的影响因素。

The performance of device is dependent on the concentration of TiO2-nanotubes,appropriate concentration of TiO2-nanotubes can connect moles of C60 which afford more direct band pathway for carrier transport especially electron transport.

实验表明，TiO2纳米管的加入增强了器件的光伏特性，并且随着TiO2纳米管混合比例的提高，器件的电加热管短路光电流和光电转换效率也相应的提高了。

The results indicate that the form of Einstein photoelectric equation at ordinary temperature is somehow different from that at T=0 K.

对室温下光电流的J-U曲线的分析表明，除T =0K情况外，光电子无明确的最大动能，也无明确的截止电压概念。

We utilize the minority carrier equilibrium continuity equations and semiconductor material absorption of photo to get the expression of current induced by photo.

利用少数载流子的稳态连续性方程和半导体材料对光的吸收，求出光电流的表达式。

Strong photocurrent signals are observed for the QDIPs under the normal incidence condition at the temperature of 77 K.

在77 K时，这些器件在垂直入射条件下观察到了很强的光电流信号。

The thick intrinsic buffer layers passivate the surface of crystal silicon layers ﹐but leading to the high series resistance and

厚的本质缓冲层可以钝化结晶矽层，但却导致串联阻抗变大，光电流急遽的下降。

The calculated positions of several photocurrent peaks are in good agreement with the experimental results.

理论计算出的几个光电流峰位置与实验测量的结果符合较好。

Therefore, firstly, the techniques to determine the gapstate density and distribution of a-Si: H films: the photoconductivity spectrum technique and the phase-shift analysis of modulated photocurrent technique, have been described.

由于a-Si：H薄膜的光电性能在很大程度上取决于带隙定域态的密度及分布，所以本论文首先详细描述了a-Si：H薄膜的隙态密度及分布的测量技术—光电导谱技术和调制光电流相移分析技术。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。