光电导的

The HEED, XRD, and XPS results confirmed the forming of intermetallic compounds between silver and rare earth. As far as silver and lanthanum be concerned, the format of intermetallic compound is AgLa.

由此，本文首次提出了稀土元素在稀土金属间化合物中的能量传递模型，认为稀土与银金属间化合物的4f能级位于费米能级附近下方，部分局域化且与导带部分耦合。4f能级与导带能级之间的电子跃迁是稀土元素在Ag-BaO薄膜中传递能量的方式，也是光电发射增强效应的来源，而4f电子的光吸收截面随入射光子能量的增加而增大的特点则是"蓝强"现象的原因。

LED or photo aging components: the core of IC optical mouse has a constant internal integrated circuit, the LED constant current of about 50mA, the general use of the mouse high-grade intermittent sampling technique, sent intermittent conduction current is the (sampling frequency of about 5KHz), can be in the same power under the premise of testing to enhance the power LED, the high detection sensitivity.

1发光管或光敏元件老化：光电鼠标的核心IC内部集成有一个恒流电路，将发光管的工作电流恒定在约50mA，高档鼠标一般采用间歇采样技术，送出的电流是间歇导通的(采样频率约5KHz)，可以在同样功耗的前提下提高检测时发光管的功率，故检测灵敏度高。

A resistor is connected between the output end of the live wire and the output end of the earth wire, another resistor is connected between the output end of the null line and the input end of the earth wire, a neon lamp in a photoelectric coupling switch is connected at the two ends of the earth wire switch in parallel after being connected with the resistors in series, one end of a light sensitive resistor in the photoelectric coupling switch GR2 is connected with the anode DC+ of an integrated circuit IC power in the creepage protector, the other end of the light sensitive resistor is connected with the anode of a diode D3, the cathode of the diode D3 is connected with the triggering pole of the silicon-controlled rectifier SCR in the creepage protector, the neon lamp and the light sensitive resistor are positioned into a dark box, and a small hole which avoids the light sensitive resistor is formed on the dark box.

一种防止地线触点未导通的全能安全插头，包括各带开关的地、零、相三线接线和由零序互感器、脱扣器、放大器、整流器、试验回路和可控硅组成的漏电保护器，所述的火线输出端、地线输出端间连接电阻，所述的零线输出端、地线输入端间串接电阻，光电耦合开关内的氖灯与电阻串联后并联在地线开关两端，光电耦合开关GR2内光敏电阻的一端与漏电保护器内的集成电路IC电源正极DC＋连接、光敏电阻的另一端与二极管D3的正极连接，二极管D3的负极与漏电保护器内的可控硅SCR触发极连接，氖灯和光敏电阻置于暗箱中，暗箱上开一避开光敏电阻的小孔。

It was found that in the DC bias electric field, when the relaxation time of the hot-electrons in the electron-electron and electron-phonon interaction process is longer than the carrier life, the photoconductivity oscillation can be caused by the change of mobility in the process of optoelectronic transport, which is the main cause for the output electrical pulse to show oscillations.

分析了开关体内载流子的微观状态和输运过程，在直流偏置电场作用下，开关体内的热电子在电子-电子、电子-声子相互作用过程中，当它们的弛豫时间大于载流子的寿命时，光电子的输运可通过迁移率变化引起光电导振荡，这是开关输出电脉冲出现振荡的原因。

Finally, the relationship between the performance of doped a-Si: H and process conditions is discussed, which includes the deposition of n〓-a-Si: H and p〓-a-Si: H, the relationship between dark conductivity, photoconductivity of boron light-doped a-Si: H and process conditions, and the relationship between the stability of LCLV and S-W effect of a-Si: H.

最后讨论了掺杂a-Si：H的性能与工艺条件的关系，包括重掺杂n〓、p〓非晶硅的制备，硼轻掺杂a-Si：H的暗态电导率与工艺条件的关系，硼轻掺杂a-Si：H的光电导与工艺条件的关系，以及液晶光阀的稳定性与a-Si：H的S-W效应。

Recently organic optoelectronic devices have attracted intensive interest among scientists and technologists because of their huge market and intriguing potential applications. Among these devices, organic photoconductor drum is the only one who has been put into market in large scale.

有机半导体光电器件由于其诱人的应用前景和巨大的市场正日益引起人们的广泛关注和研究兴趣，其中唯一已进行大规模产业化的有机半导体光电器件是有机光导鼓。

The HEED, XRD, and XPS results confirmed the forming of intermetallic compounds between silver and rare earth. As far as silver and lanthanum be concerned, the format of intermetallic compound is AgLa.

由此，本文首次提出了稀土元素在稀土金属间化合物中的能量传递模型，认为稀土与银金属间化合物的4f能级位于费米能级附近下方，部分局域化且与导带部分耦合。4f能级与导带能级之间的电子跃迁是稀土元素在Ag-BaO薄膜中传递能量的方式，也是光电发射增强效应的来源，而4f电子的光吸收截面随入射光子能量的增加而增大的特点则是&蓝强&现象的原因。

The experimental results show that the response time of the GaAs detector is about 100 ps and is independent of the bias voltage. However, it is dependent on the conditions of measurement system. The method of neutron irradiation and techniques change can improve the response time of the detector. The relationship between the sensitivity and the bias voltage is linear.

实验结果表明：SI-LEC GaAs光电导辐射探测器时间响应约为100 ps，与探测器偏压无关，但受测试系统的影响较大；用中子辐照改性和改进工艺的方法可提高探测器的时间响应；探测器的直流激光响应与偏压则呈线性关系。

The response of ultra fast photoconduction detector made of SI-LEC GaAs crystal was studied experimently. The response time to picoseconds pulse laser and sensitivity to 532 nm direct current laser were obtained for GaAs detector.

实验研究了具有极快响应的SI-LEC GaAs光电导辐射探测器的响应，测量它对皮秒级脉冲激光的时间响应及对532 nm直流激光的灵敏度。

Below T_(M1),the resistivity increase under photo inducing. The maximum resistivity change(Δρ/ρ_0) in the La_(0.82)Te_(0.18)MnO_3 sample can reach 51.1% in 253K which is more large than that of hole-doped manganites. Above T_(M1) there is a photoconduction.

在低温区，激光的照射使得薄膜电阻率增大，其中La_(0.82)Te_(0.18)MnO_3在253K下的电阻变化率达到峰值51.1%，这比已有的报道中相同条件下的空穴掺杂材料有很大的提高；在高温区激光作用产生了较小的光电导现缘。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。