光电导的

After fast Fourier transform , the amplitude and phase of the THz pulse wave is given, then the refractive index and absorption of the material in THz region is extracted.

它以THz辐射作为探测源，利用电光采样或光电导采样方法直接记录THz辐射电场的振幅时间波形，通过傅立叶变换得到测量信号振幅和相位的光谱分布，进而获得材料在THz波段的吸收和色散等信息。

Then the micro-state and transport process of carriers (hot-electron) in vivo of the switch material were studied in details using the quantum theory. It was found: in the DC bias electric field, under the certain condition of the relaxation time of the hot-electrons in the electron-electron and electron-phonon interaction process, the photoconductivity oscillation can be caused by the change of mobility in the process of optoelectronics transport, and the main causes that the output electrical pulse appears oscillation was revealed.

并从量子理论出发，研究开关体内载流子的微观状态和输运过程，在直流偏置电场作用下，体内热电子在电子—电子、电子—声子相互作用过程中，其驰豫时间及载流子寿命之间存在关系时，光电子的输运可通过迁移率变化引起光电导振荡，揭示出导致开关输出电脉冲出现振荡的根本原因。

The results showed that the photoconductivity of AZO nanoparticles was improved greatly compared to that of bulk AZO due to nanometer size effect.

结果表明，由于纳米尺寸效应，AZO纳米微粒的光电导性能要比本体AZO颗粒好的多。

Photoconductivity of a PVK-C60 thin film has beeninvestigated and electro-optic coefficiency of a PVK-nitroazobenzene thin film has beenmeasured.

研究了PVK-C60薄膜的光电导特性，测量了PVK-硝基偶氮苯的电光系数。

At present, this kind of GaAs photoconductor detector has had practical value. It can detect X-ray, gamma-ray, laser pulse successfully at the room temperature.

目前，我们研制的砷化镓光电导探测器可以在室温下对X射线、γ射线及激光脉冲进行测量，有一定的实用价值。

There are many factors that can affect the radiation, such as photoconductor material characters, bias voltage, laser pulse width and energy, and so on.

影响光电导天线的因素有材料性质、偏转电压、激光脉冲宽度和单脉冲能量等，其中激光脉冲宽度和激光脉冲能量对太赫兹辐射有很重要的影响。

Through the dynamic transporting characteristics of carriers within the photoconductor,the radiation THz puls...

高光能、低偏置电场下，空间电荷电场是造成光电导天线辐射的THz波呈现双极性的主要原因。

It was found that the efficiency after variable temperature phosphorus gettering was much better than that of isothermal one for cast multicrystalline silicon, especially in the high quality zone of as-grown materials, and the optimal parameter of variable temperature phosphoru.

用微波光电导衰减仪研究了不同温度和时间的恒温和变温磷吸杂处理对铸造多晶硅片电学性能的影响。

Multilayer transparent dielectrics as passivation and insulation protection materials are deposited and coated on the surface of the GaAs switch.

通过对Au／Ge／Ni电极结构的最佳化设计，采用Si3N4硅凝胶钝化／保护技术，首次研制出一种全固态的GaAs横向高压光电导开关。

The affection of preparation parameters to photoconduction of CuPc/CdS multilayer films was similar to that of CuPc/ZnS multilayer films.

CuPc/CdS与CuPc/ZnS复合膜的光电导性能随各制备参数有着类似的变化规律。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。