光电元件

The design of optoelectronic devices fabricated from III-nitride materials is aided by knowledge of the refractive index and absorption coefficient of these materials.

对三族氮化物材料而言，拥有其反射率及消光系数的知识是有助於制光电元件设计的制造。

The so-called transmission-means-tested objects on the road, a constant source of light energy through the measured object, most of the absorption, optical transmission project to optoelectronic components; The so-called diffuse reflection is a constant source of light projected on the measured object, from the detected objects to the surface after projecting optoelectronic components; Shade refers to the so-called when-issued light of the flux measured by the light of a cover part of the projected cut optoelectronic components of flux change, and the degree of change in the optical path detected objects on location

所谓透射式是指被测物体放在光路中，恒光源发出的光能量穿过被测物，部份被吸收后，透射光投射到光电元件上；所谓漫反射式是指恒光源发出的光投射到被测物上，再从被测物体表面反射后投射到光电元件上；所谓遮光式是指当光源发出的光通量经被测物光遮其中一部份，使投射刭光电元件上的光通量改变，改变的程度与被测物体在光路位置有关。

The so-called transmission-means-tested objects on the road, a constant source of light energy through the measured object, most of the absorption, optical transmission project to optoelectronic components; The so-called diffuse reflection is a constant source of light projected on the measured object, from the detected objects to the surface after projecting optoelectronic components; Shade refers to the so-called when-issued light of the flux measured by the light of a cover part of the projected cut optoelectronic components of flux change, and the degree of change in the optical path detected objects position.

所谓透射式是指被测物体放在光路中，恒光源发出的光能量穿过被测物，部份被吸收后，透射光投射到光电元件上；所谓漫反射式是指恒光源发出的光投射到被测物上，再从被测物体表面反射后投射到光电元件上；所谓遮光式是指当光源发出的光通量经被测物光遮其中一部份，使投射刭光电元件上的光通量改变，改变的程度与被测物体在光路位置有关。

AIXTRON AG , AIXTRON AG 是一家生产沉积设备、半导体产业, The Company's technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and opto-electronic applications based on compound, silicon, or organic semiconductor materials and more recently carbon nanostructures.Such components are used in display technology, signal and lighting technology, fiber communication networks, wireless and cell telephony applications, optical and electronic data storage, computer technology as well as a wide range of other high-tech applications.

这些组成部分被使用在显示技术、信号和照明技术、光纤通信网络、无线和手机电话应用、光学和电子数据的存储、计算机技术以及其它广泛的高科技应用，成立於1983年，该公司总部设在德国，在台湾也有分公司；用心在 MOCVD 的开发与研究中20多年， MOCVD 成长薄膜时，主要将载流气体通过有机金属反应源的容器，将反应源的饱和蒸气带至反应槽中与其它反应气体混合，然后在被加热的基板上面发生化学反应促成薄膜的成长，而这些光电半导体薄膜则是被应用在光电元件及微电子元件中；要进入工厂前还需要穿上头套、鞋套和实验衣，可见在对於防止灰尘或头发飘散在他们眼中是很重视的一环。

Zinc oxide has unique physical properties that make it a most promising material for optoelectronic device.

氧化锌因为具有独特的物理特性使它成为最有希望的光电元件材料。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔镭射二极体、以及其他光电元件。

Topics include: properties, preparation, and processing of compound semiconductors; theory and practice of heterojunctions, quantum structures, and pseudomorphic strained layers; metal-semiconductor field effect transistors; heterojunction field effect transistors and bipolar transistors; photodiodes, vertical-and in-plane-cavity laser diodes, and other optoelectronic devices.

主要内容包括：化合物半导体的特性、制备与制程；异质接面、量子结构和假晶应变层的理论与实际应用；金属半导体接面场效电晶体；异质接面场效电晶体以及异质接面双极电晶体；检光二极体、垂直和平面共振腔雷射二极体、以及其他光电元件。

Voltage Source and Current Source, Thevenin Theory, Trouble Shooting, Characteristic Curve of Diode, Diode Models, Rectifier Circuits, Input Filtering Capacitor, Voltage Multiplier Circuits, Limiter and Clipper Circuits, DC Clampers and Peak-to-peak Detectors, Zener Diode, Zener Diode Rectifier, Photoelectric Devices, Collector-Emitter Junction, Transistor Characteristics of common-emitter, Base Bias, LED Dirver, Establishing a Stable Q-point, PNP Transistor Biasing, Transistor Biasing, Coupling and By-Pass Capacitors, AC Emitter Resistance, Common-Emitter Amplifier, Other Common-Emitter Amplifiers, Cascaded Common-Emitter Amplifiers, AC Load Line, Emitter Follower, Class B Push-pull Amplifiers, JFET Characteristic Curve, JFET Biasing, JFET Amplifier, VMOS Circuit, Differential Amplifier, Operational Amplifier, Non-inverting Feedback, Negative Feedback.

电子学实验( S0704)(1，1)/应用电子学实验( S0472)(1，1)电压源和电流源、戴维宁定理、故障排除、二极体特性曲线、二极体近似模型、整流电路、电容-输入型滤波器、倍压电路、限制器电路和峰值检测电路、直流定位器与峰对峰检测器、齐纳二极体、齐纳二极体整流器、光电元件、集射极接面、集极特性曲线、基极偏压、LED驱动器、建立一个稳定的工作点 Q 、 PNP 电晶体偏压、电晶体偏压、耦合及旁路电容、交流射极电阻、共射极放大器、其他 CE 放大器、串接共射极放大器、交流负载线、射极随耦器、 B 类推挽式放大器、 JFET 特性曲线、 JFET 偏压、 JFET 放大器、 VMOS 电路、差动放大器、运算放大器、非反向电压回授、负回授。

Examples of such devices are polarizers and compensators,switches etc.

在研究晶体中的光传输问题时，晶体的双折射效应决定了光传输的特殊性，所以在设计光电元件时光场的矢量性质是不可忽略的。

In this dissertation, two optoelectronic devices based on photonic crystals are presented.

在本论文中，我们报告两种利用光子晶体所制造的光电元件。

However, as the name（read－only memory）implies, CD disks cannot be written onorchanged in any way.

然而，正如其名字所指出的那样，CD盘不能写，也不能用任何方式改变其内容。

Galvanizes steel pallet is mainly export which suits standard packing of European Union, the North America. galvanizes steel pallet is suitable to heavy rack. Pallet surface can design plate type, corrugated and the gap form, satisfies the different requirements.

镀锌钢托盘多用于出口，替代木托盘，免薰蒸，符合欧盟、北美各国对出口货物包装材料的法令要求；喷涂钢托盘适用于重载上货架之用，托盘表面根据需要制作成平板状、波纹状及间隔形式，满足不同的使用要求。