光电二极管

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Choose the 890nm infrared LED as the light source after compared the capabilities of incandescent lamp/tungstic lamp and LED/LD and also think about the selective absorbability of water; it has strong points such as constant light intensity,long life, narrow light spectrum,etc, and use the infrared light with 890nm wavelength to decrease the influence of optical-absorption matters.Choose the photosensitive diode which suitable to the LED which we choosed after compare the capabilities of light sensitive resistor, photocell, photosensitive diode and phototriode. Both of these make up the photoelectric system of turbidimeter.

通过比较白炽灯／钨灯和发光二极管／激光二极管的各项性能指标，考虑到水对光线具有选择性吸收作用，选择890nm的红外发光二极管作为浊度仪的发光器件，其有发光光强稳定、寿命长、发光光谱窄等优点，且用波长大于800nm的红外光进行测量可以大大减小水中光吸收物质的影响；通过对光敏电阻、光电池、光敏二极管和光敏三极管等光敏器件的各项性能的分析与比较，选择响应时间短、输出特性线性度好的光敏二极管作为光接收器件，并与红外发光二极管相配套，构成浊度仪工作的重要系统——光电系统。

A resistor is connected between the output end of the live wire and the output end of the earth wire, another resistor is connected between the output end of the null line and the input end of the earth wire, a neon lamp in a photoelectric coupling switch is connected at the two ends of the earth wire switch in parallel after being connected with the resistors in series, one end of a light sensitive resistor in the photoelectric coupling switch GR2 is connected with the anode DC+ of an integrated circuit IC power in the creepage protector, the other end of the light sensitive resistor is connected with the anode of a diode D3, the cathode of the diode D3 is connected with the triggering pole of the silicon-controlled rectifier SCR in the creepage protector, the neon lamp and the light sensitive resistor are positioned into a dark box, and a small hole which avoids the light sensitive resistor is formed on the dark box.

一种防止地线触点未导通的全能安全插头，包括各带开关的地、零、相三线接线和由零序互感器、脱扣器、放大器、整流器、试验回路和可控硅组成的漏电保护器，所述的火线输出端、地线输出端间连接电阻，所述的零线输出端、地线输入端间串接电阻，光电耦合开关内的氖灯与电阻串联后并联在地线开关两端，光电耦合开关GR2内光敏电阻的一端与漏电保护器内的集成电路IC电源正极DC＋连接、光敏电阻的另一端与二极管D3的正极连接，二极管D3的负极与漏电保护器内的可控硅SCR触发极连接，氖灯和光敏电阻置于暗箱中，暗箱上开一避开光敏电阻的小孔。

Somewhat less obvious is the fact that photodiode leakage and photovoltaic cell internal losses are also functions of terminal voltage.

此外，光电二极管的漏电流和光电池的内部损耗也是其端电压的函数。

The main products have silicon photodiode, silicon phototransistor, color sensor diodes, silicon photovoltaic cells, silicon photocell Zilan, infrared light-emitting diodes, photoelectric switch, photoelectric sensor, photoelectric sensor.

主要产品有硅光敏二极管、硅光敏三极管、色敏二极管、硅光电池、硅紫兰光电池、红外发光二极管、光电开关、光电传感器、光电位移传感器。

The main products are photodiodes, phototransistor, silicon PV, silicon-violet light batteries, infrared light-emitting diodes, photovoltaic intermittent, photoelectric sensors, photoelectric displacement sensors, solar cells, and so on.

主要产品有光敏二极管、光敏三极管、硅光电池、硅紫兰光电池、红外发光二极管、光电断续器、光电传感器、光电位移传感器、太阳能电池等。

Basing on some set of devices that had been developed and applied before, a measuring method was presented in this thesis that a small integrating sphere made from graPhite was used as laser allenuator and a photorecdtifier array was used to detect the intens...

本论文在己经研制成功并投入使用的几种激光参数测量设备的基础上提出了石墨材料的小积分球作为强激光衰减器，并用光电二极管阵列探测衰减之后光强分布的测量方法。

A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes.

介绍了由带尾纤的InGaAs/InP雪崩光电二极管建立的近红外单光子探测系统。

These detectors are based on amorphous silicon TFT/photodiode arrays coupled to X-ray scintillators.

这些探测器以连接到 X 射线闪烁体的非晶硅 TFT/光电二极管为基础。

The scintillators absorb the X-rays and convert them into visible light photons that then pass onto the photodiode array.

这个闪烁物可以吸收 X 射线并将他转化成可见光光子，然后进入光电二极管阵列。

Do you know, i need you to come back

你知道吗，我需要你回来

Yang yinshu、Wang xiangsheng、Li decang,The first discovery of haemaphysalis conicinna.

1〕 杨银书，王祥生，李德昌。安徽省首次发现嗜群血蜱。