光电二极管

To be true, as a twenty-five-year old Einstein, he is very talented, he associated photoelectric diode and black body radiation in the research of photoelectric effect, young and capable, very talented; he associated Coriolis force in the inertia with electromagnetic induction issue and curl field issue in light wave interference research, I really admired his association talent from my heart!

诚然，作为25岁的爱因斯坦很有才华，他在光电效应的研究中把光电二极管与黑体辐射联想到一起，年轻有为，很不简单；他在光波干涉研究中就把惯性中的 Coriolis 力与电磁感应和旋度场问题联想到一起，我真心佩服他的联想智慧！

The feedback resistance, R1, is dependent on cell sensitivity and should be chosen for either maximum dynamic range or for a desired scale factor. R2 is elective: in the case of photovoltaic cells or of photodiodes, it is not required in the case of photoconductive cells, it should be chosen to minimize bias current error over the operating range.

反馈电阻R1的取值由电池的灵敏度和要求的最大动态范围，或者需要的电流——电压转换比例决定。R2分情况选取：在光电池和光电二极管时不需要这个电阻，在光电导的时候，电阻的阻值应该能使在工作范围内，由OP输入偏置电流所带来的误差最小。

Photodiode and photomultiplier have each advantage and disadvantage, they should be choosed in reason and be used in right way.

光电二极管和光电倍增管各有优缺点，在实验中需要合理选择，并且正确使用。

The method research and error analysis of photodiode and photomultiplier is another main point in the thesis.

光电二极管，光电倍增管测量激光强度的方法研究及其误差分析是本文的另一个重点。

In this paper one kind of electric charge keen amplifier is designed to matchthe detector adopted the scintillation coupling to the photo diode , which isdifferent form the traditional way of using scintillation coupling to themultiplier phototube .

论文针对采用闪烁体和光电二极管耦合的探测器而设计一种对电荷灵敏的放大器，这种探测器方案区别于传统的采用闪烁体与光电倍增管耦合的方式。

Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage.

试验结果表明，采用CTIA读出电路的Nwell/Psub型光电二极管在515 nm处拥有0.1 A/W的光电转换灵敏度以及300 fA的暗电流。

X9313U-WS Pinout: The coupler consists of a AlGaAs LED that is optically cou- pled to a dielectrically isolated photodiode array which drives two series connected high voltage MOS transistors.

X9313U-WS引脚说明：该耦合器由一个砷化铝镓发光二极管是光凑发光二极体为介质隔离光电二极管阵列的驱动两个串联的高压MOS晶体管。

The article research the relative project about visibility, it discussed the principle, it introduced the new measuring method opposite the foreword scattering visibility meter and design the transmit and incept devices of foreword scattering visibility for keystone, it is advanced the characteristics of the light source which is should be possess , it show the advantage of the LED used to the light source and selected PIN LED which matching with it, the article is discussed the optics system and design the reasonable object lens structure, measuring and controlling system and the relative design idea ,design method and the accuracy analyzing etc.

本文研究了能见度测量仪器的有关问题，系统地论述了能见度测量仪器的理论，然后以前向散射式能见度仪为研究对象，论述一种新的测量方法，提出了理想光源应具备的特点，说明了采用LED 发光二极管做光源的优越性，并选择了合适的PIN 光电二极管与之匹配，对光学系统作了全面讨论，设计出合理的物镜结构、机械结构、并详细论述了与之有关的设计思想、设计方法和精度分析等问题。

The OPI1268 optoisolator combines a high efficiency GaAlAs LED with a peak wavelength of 850nm, optically coupled to a Photologic photodiode in the output IC.

OPI1268光隔离器集成了高效率的GaAIAsLED，峰值波长为850nm，光学连接在输出集成电路的光电逻辑光电二极管上。

The experiments show that the Au/n-ZnO/p-Si SHBT UV enhanced phototransistor enhances the sensitivity of the ultraviolet response noticeably. The UV response sensitivity at 370nm of the phototransistor is 5～10 times that of a ZnO/Si heterojunction UV enhanced photodiode.

实验显示Au/n-ZnO/p-Si结构的紫外增强型的光电三极管对紫外光的响应明显增强，对371nm波长的紫外光的灵敏度是普通n-ZnO/p-Si异质结紫外光电二极管道的5～10倍。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。