光电

Beijing Institute of Technology, Beijing 100081,ChinaIn order to get the high output power, a RF excited diffusively cooled all-metal slab waveguide CO2 laser was reported, in which gas discharge region was constructed by two aluminum side walls and aluminum electrodes. The region dimension was 2 mm height×20 mm width×386 mm length, and the gas composition was CO2:N2:He:Xe=1:1:3:0.26. This technique replaced the old ceramic and metal sandwich waveguide technique.The optimum out power 127 W was achieved from the RF excited diffusively cooled all-metal slab waveguide CO2 laser with the longitudinal voltage uniformity distribution technique and scaling area technique. The electro-optic conversion efficiency was about 14%.

为了获得较高的激光输出功率，介绍了射频激励扩散冷却全金属板条波导CO2激光器，放电区域由左右两个铝合金壁和上下两个铝合金电极构成，放电区域高2 mm，宽20 mm，长386 mm，工作气体混合比CO2：N2：He：Xe=1：1：3：0.26，该技术代替了过去的金属陶瓷结构，结合纵向电压均匀分布技术和面增比技术，获得了127 W的激光输出功率，光电转换效率高达14%。

Recent progress for β-diketone derivatives were reviewed based on reading a great deal of related literature including Photoluminescence and Electroluminescence of rear earth metal complexes and the photoelectric properties of multi-pyridine Ru complexes.

本论文在大量文献调研的基础上，对β-二酮的结构特点和研究状况、稀土配合物发光材料和多吡啶钌配合物光电性质研究进展进行了较详细的综述。

With the electrical connections at the top and bottom side of the wafer-level IC packaging Lead-frame structure and composition of the surface-mount semiconductor package structure Multi-layer printed circuit board Antifuse and its formation method and with the anti-fuse non-volatile memory device unit cell Tandem electric signal processing circuit and electronic device Light-emitting diode packaging structure and encapsulation method Electronic Packaging Structure Flip-chip high-speed optoelectronic components and structure Pairs of piezoelectric friction side by side to promote the three-step device and scanning probe microscope Light-emitting diode and its manufacturing method, the production base of light-emitting diode method Three or four parallel advance of stepping piezoelectric device and scanning probe microscope lens body Silicon substrate and its manufacturing method Semiconductor device and voltage-divider A polysilicon layer and the microcrystalline silicon layer of the double-substrate active layer structure, methods and devices The edge of the thickness of silicon controlled Of a lateral semiconductor devices and high-voltage devices With a vertical-channel transistors semiconductor device Of a memory array and for the manufacture of a memory array method Read-only memory cell array structure Active-matrix substrate and display device High-voltage semiconductor integrated circuit devices, dielectric isolated type semiconductor device Image sensing devices Lens module and its manufacturing methods Solid-state imaging device and camera Injection angle for the trench isolation Organic Light-Emitting Display Device Organic light-emitting display device Bipolar transistor structure of the surface passivation Double-triggered silicon-controlled rectifier HFET Metal-oxide semiconductor transistors Self-aligned trench accumulation mode field effect transistor structure Thin-film transistors and Display Devices TFT Lead Diode Low-frequency, low noise, low-flashing diode Used for thin-film solar cells trap light structure Transparent sun solar cells Quaternary semiconductor heterojunction photovoltaic cells heat Si nano-pillar array heterojunction thin-film solar cells GaN-based micro-composite solar cells isotope Optical sensor Semiconductor by optical components Imaging Detector Transparent conductive oxide coating Silicon-based high-performance dual-junction solar cells Thin-film solar cells Alien LED Devices

非专业，不在行，求高手帮忙。谢谢！具有顶部及底部侧电连接的晶片级集成电路封装导线架结构及其构成的表面黏着型半导体封装结构多层印刷电路板反熔丝及其形成方法和具有该反熔丝的非易失性存储器件的单位单元串联用电式信号处理电路及电子装置发光二极管的封装结构及其封装方法电子封装结构高速光电组件及其芯片倒装结构双压电体并排推动的三摩擦力步进器与扫描探针显微镜发光二极管及其制作方法、发光二极管的底座的制作方法三或四压电体并行推进的步进器及其扫描探针显微镜镜体硅衬底及其制造方法半导体装置与分压电路具多晶硅层及微晶硅层的双底材主动层结构、方法及装置硅晶片的受控边缘厚度一种半导体横向器件和高压器件具有垂直沟道晶体管的半导体器件一种记忆体阵列及其用于制造一记忆体阵列的方法只读内存单元阵列结构有源矩阵基板和显示装置高耐压半导体集成电路装置、电介质分离型半导体装置图像感测装置透镜模块及其制造方法固态成像装置和照相机用于沟道隔离的斜角注入有机电致发光显示装置有机发光显示装置双极晶体管的表面钝化结构双触发型可控硅整流器异质结场效应晶体管金属氧化物半导体晶体管自对准沟槽累加模式场效应晶体管结构薄膜晶体管及显示器件薄膜晶体管无铅二极管低频、低噪音、低闪烁的二极管用于薄膜太阳电池的陷光结构透明遮阳太阳能电池片四元半导体的异质结热光伏电池硅基纳米柱阵列异质结薄膜太阳能电池氮化镓太阳能同位素复合型微电池光学传感器半导体受光元件成像探测器透明导电氧化物涂层硅基高效双结太阳能电池薄膜太阳能电池异形LED器件

Wuhan easy way of photoelectric mainly engaged in high-power laser diode module of the development, production and sales.

武汉易路达光电主要从事高功率半导体激光器模块的研发、生产和销售。

The laser unit, because of its monochromaticity and small divergency, is used as sensor's light source. Devices and chips provided with high-speed responsing and processing capabilities are employed.

该方案采用光电传感、模数转换的方法，通过信号处理把被摄对象的高速时空信息以最简单最直观的方式展现出来。

By reducing multiplication and division operation, the simplified algorithm can reduce the measurement time.

研究基于光电编码器和四倍频电路的单片机速度测量系统的简化算法。

The applied coating techniques of photoelectrode are doctor blade and sprinkling. The influence heating temperature and duration as well as transmittance of the photoelectrode were discussed in this work.

光电极制作技术主要有涂布法与喷雾法两种，而探讨的问题有烧结温度与时间，还有多孔膜之透光率等对光电转换效率的影响。

The working principle of double refraction instrument adopting photoelectricity aim is introduced.

介绍了采用光电瞄准的双折射仪的工作原理。

The reasons that the research of NEA photo-electric cathode in our country lags greatly behind the other foreign countries which possess the advanced technologies mainly lie in the following facts: besides the lack of enough investment in this field and the draggle of relative technique on the NEA , t...

我国NEA光电阴极的研究距离国外先进水平差距较大，寻其原因除了资金投入不足，相关技术落后等因素外，缺乏对每一环节有效的测试分析手段和监测控制方法是制约我国阴极发展缓慢的一个重要原因。

In order to realize the ultra high-speed image storage in the high accuracy measurement of opto-electronic tracking and measuring system, an image storage scheme based on Double-data Rate Dual In-line Memory Module array technology is put forward.

为了实现光电跟踪测量系统高精度测量中图像数据的超高速实时存储，提出了基于双数据率模组阵列的超高速数字图像存储方案。

This one mode pays close attention to network credence foundation of the businessman very much.

这一模式非常关注商人的网络信用基础。

Cell morphology of bacterial ghost of Pasteurella multocida was observed by scanning electron microscopy and inactivation ratio was estimated by CFU analysi.

扫描电镜观察多杀性巴氏杆菌细菌幽灵和菌落形成单位评价遗传灭活率。