光密度

Five minutes is the optimal irradiation time for ALA-PDT by Xe lamp under the same irradiation conditions. Irradiation injury caused by the light alone was slight, but the destruction rate of ALA-PDT was very high. Conclusion: Xe lamp's action spectrum is wider and it's power is higher, so it's better than 532 nm laser for ALA-PDT.

结果：532 nm连续激光和脉冲激光对K562细胞的ALA-PDT抑制率均较低，增加光剂量也不能有效提高ALA-PDT的抑制率；氙灯在功率密度为350 mW/平方公分、光照5 min时就能达到最佳的光剂量，此时单纯光照对K562细胞的光损伤作用很小且ALA-PDT效率很高。

In this paper, quantum theory, the use of time evolution operator obtained by the first method for the system density operator of any time, and atomic reduced density matrix, and the atomic dipole squeezing conditions, numerical study of the mixed state -type atom of the three-level with single-mode optical field coherent interaction of atomic dipole squeezing effect.

本文采用全量子理论，运用时间演化算符方法先求出所求系统任意时刻的密度算符，和原子的约化密度矩阵，以及原子偶极压缩的条件，数值计算地研究了混合态型3能级与单模相干光场相互作用时原子的偶极压缩效应。

In this paper. a novel magnetic head crab track pluck detection way is given by the analysis of etched servo graph for 4000 TPI etched surface servo. It improve the maximum seek track speed of magnetic head greatly, So that magnetic head can seek track at high speak for high track density.

光刻伺服盘是一种新的磁头伺服定位技术［1］，通过对4000TPI光刻面伺服系统的光刻伺服图形结构的分析，本文提出了一种简单可靠的磁头过道脉冲检测方式，可显著提高磁头寻道速度，保证磁头在高道密度下高速寻道。

Because the magneto-optical recording density isin inverse proportion to the square of wavelength,and the GaN-based diode ina blue light range is at the stage of practical usage,it is very important to studythe magneto-optical materials in a blue light range.

由于磁光记录密度反比于光波长的平方，而且目前以GaN为基的蓝光二极管已经实用化，从而研究蓝光波段的磁光材料十分重要，这点是本论文的主要出发点。

The influence of the signal power, the signal ER, the probe power, the probe wavelength and the drive current of the SOA on λ pk,s and the improvement of the ER is studied in detail by using the multisection model, and considering the nonsymmetry of the gain profile and the shift of the gain peak wavelength along with the carrier density.

采用分段模型，考虑了SOA中增益谱的不对称性以及增益峰值波长随载流子密度的漂移，深入研究了信号光功率，ER，参考光功率，波长以及SOA注入电流对选择信号光波长λpk，s以及消光比改善量的影响。

Arc-glow plasma depositing technique is a new surface coating method. With the help of vacuum arc discharge, a cold cathode arc source continually emits ion beams of coating elements with high currency density and high ionizing ratio.Upon the ion bombard and diffusion work on, the surfaces of the parts form deposited layers, diffusion layers. In this study, a commercial magnesium alloy AZ91 was coated with Ti film layer.

加弧辉光离子渗镀技术将辉光放电与弧光放电有机地结合起来，利用辉光放电空心阴极效应使工件迅速升温，同时在真空容器壁上设置一个或多个金属阴极电弧靶源，利用真空电弧放电而不断地发射出高能量、高电流密度、高离化率的欲渗金属离子流，依靠扩散和离子轰击作用快速渗入工件表面层，在工件表面可以形成渗层、镀层、渗镀结合层。

This observation provided a strong support to the point that most leaves export the most of assimilates in the light time. Plasmodesmal densities between SE/CC, CC/PP, PP/PP and PP/BSC (bundle-sheath cell) decreased in weak light. Plasmodesmata were observed between CC/SE (nacreous-walled sieve element), PP/BSC in branch veins in normal light intensity, but not in weak light. Thus apoplasmic pathway may be the main mode of transport of assimilates in weak light, however symplasmic pathway may be the main mode of transport of assimilates in normal light intensity.

在筛管/伴胞、伴胞/韧皮薄壁细胞、韧皮薄壁细胞/韧皮薄壁细胞和韧皮薄壁细胞/维管束鞘细胞之间的胞间连丝密度都在弱光条件下下降，在正常光照强度下支脉筛管/伴胞和韧皮薄壁细胞/维管束鞘细胞之间可以观察到胞间连丝，而在弱光下几乎观察不到胞间连丝的存在，所以同化物的运输在弱光条件下可能以质外体运输为主，而在正常光照强度下，共质体运输可能是主要的运输方式。

It is well known that the large lattice mismatch (16%) and thermal expansion coefficient mismatch between GaN and sapphire substrate are the main origins of TDs. By new growing technique of LEO, we acquired high quality GaN films almost free of TDs. The stress characteristics in GaN films with MLTB growing technique is dependent on growing systems and conditions, and the changes of stress and dislocation density are rightabout; Combining buffer layers of high temperature and low temperature is first developed to growing GaN films with low dislocation density, and the mechanism of lowering TDs density is that the first buffer layer of high temperature can make nuclear in second buffer layer of low temperature bigger. This technique also can restrain yellow luminescence effectively.

众所周知，晶格失配和热应力失配是GaN异质外延中位错产生的主要原因；为此，我们对几种降低缺陷的MOCVD外延生长方法进行了新的尝试，其中尝试了侧向外延生长技术，得到了低位错密度（小于10〓/cm〓）、高质量的GaN外延层；尝试多低温缓冲层法，发现材料中的应力特性与生长系统和生长条件有关，材料中的应力与位错密度按相反方向变化；首次尝试高低温联合缓冲层法，材料中高温缓冲层可以使随后的低温缓冲层中成核颗粒增大，从而导致随后高温GaN外延膜中位错密度降低，并且能够有效地抑制黄光峰。

In addition, some parameters evaluating concentrating performance of concentrator are calculated, which conclude optical efficiency, geometric concentrating ratio, energy concentrating ratio and the relative percent of greatest disagreement of the flux density.

另外，计算了评价聚光系统性能的一些参数，包括光学效率、几何聚光比、能量聚光比和接收器上能流密度最大不一致性的相对百分比。

The silica surfaces polished with ion beam of 400ev energy and 100mA density in 35°incident angle for 2hrs was found to have a roughness less than 0.5nm . The SFM was also used to measure the surfaces to be bonded by SAB method and the deformations of the surfaces during contact each other. The micro roughness of the surfaces was found to produce great effect on the SAB strength. The rougher the surfaces are, the weaker the bonding forms.

本文首先将原子力显微镜应用于一种新的超光滑表面离子束抛光的工艺研究，搞清了表面纳米级微观形貌与离子束抛光参数之间的关系，在离子能量为400V、束流密度为100mA和入射角为40°时，经过两个小时以上的抛光，硅（111）表面微观形貌在1μm×1μm的范围内从抛光前的5nm下降到0.4nm。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。