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In this dissertation, two optoelectronic devices based on photonic crystals are presented.

在本论文中,我们报告两种利用光子晶体所制造的光电元件。

An experimental system has been set up.The sensitivity of a photon-counting photomultiplier tube was measured,and the results were compared with those obtained using conventional method.

基于这一方法对光子计数型光电倍增管的响应灵敏度进行了测量,并将实验结果与常规方法测得的结果进行了比较。

The model considers as many factors as possible, including nonuniform distribution of photon intensity and carrier density along active region, gain spectral dispersion, spontaneous emission spectrum and facet reflectivity, and is applicable under the condition that the pulse width of injecting signal is wider than 10 picoseconds. It provides a convenient and effective theoretical platform for SOA dynamic characteristic study.

该模型考虑光子密度和载流子浓度沿有源区的非均匀分布、增益谱色散性、自发辐射噪声谱和端面反射率,适用于脉冲宽度高于10ps的信号输入的情况,为后续研究SOA动态特性提供了方便而有效的理论验证平台。

A near-infrared single-photon detection system is established by using pigtailed InGaAs/InP avalanche photodiodes.

介绍了由带尾纤的InGaAs/InP雪崩光电二极管建立的近红外单光子探测系统。

It consists of a traveling-wave semiconductor optical amplifier, a wavelength selecting element, an optical coupler and in-line optical isolators. All of the components in the setup are fiber pigtailed and commercially available. We have solved the wavelength-dependent rate equation applicable to the FRSLs.

针对这种结构的特点,首先,从理论上建立了FRSLs的物理模型,考虑到行波式半导体光放大器增益谱特性,引入Lorentz型波长修正项,得到适用于FRSLs的单模行波速率方程,继而通过求解方程,推出了光子流密度分布的解析表达式。

Refraction index of semiconductor material is a function of optical frequency, called dispersion relation.

半导体材料的折射率是光频率的函数,所以在计算光子晶体的能带结构时毖须考虑到色散关系。

Due to hyperfine structure of Rubidium atoms, the four-wave mixing effect exists in thermal Rubidium atomic vapor, which related to the third-order nonlinear effect closely. The Raman gain of the Stokes and anti-Stokes photons is observed by sweeping the frequency of the probe beam.

由于铷原子的超精细能级结构,在铷原子蒸气中同时存在与三阶非线性效应相关的四波混频现象,通过扫描探测光的频率同时观察到具有斯托克斯和反斯托克斯光子的喇曼增益现象。

From the measured spectrum of He-like Al ions, we observed that the intensities of qr satellites were stronger than that of ijk satellites, and according to these observed satellite features, we have identified that photon ionization and photon excitation have very important effect on the ionization balance of these radiatively heated plasmas.

从测量得到的Al类氦离子发射光谱可以观察到,qr等伴线的强度明显高于ijk伴线的强度,由此可以确定出光子激发和电离过程对输运腔中等离子体的形成不可忽略。

The absorption bandedge redshifts were discussed in terms of Rayleigh scattering. The intensity decrease was caused by nonradiation energy transfer and transform between Co nanopticles and AAO template or metal nanoparticles absorb photon.

分析认为,光吸收带边红移主要是Co纳米粒子瑞利散射引起的消光现象;强度的减弱是由于沉积在AAO模板中的Co纳米粒子和模板之间发生了非辐射能量的传递和转换,或金属纳米粒子对光子具有吸收和传导作用所致。

The first-order and second-order Raman scatterings of the silicon nanowires were studied in a temperature range from 123 K to 633 K.

在123K到633K范围内研究了纳米硅线Raman光谱的温度依赖关系,应用热效应非简谐过程,声子限域模型和晶格扩展效应分析研究结果;引入光子-电子-声子Raman散射过程解释了声学声子模峰强与光学声子模峰强的比值的温度依赖关系。

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