光发射

Excitation intensity of the complex is strong enough at 395 nm and the complex can be well excited by the 395 nm emission light of InGaN chip.

在395 nm处具有很强的激发强度，该配合物能够被395 nm发射的InGaN芯片发出的近紫外光激发而发红光。

Monitored at 614 nm, the strongest excitation wavelength located at 395 nm, which matched to the emission light of InGaN chip.

对614 nm 红光进行监控，其激发光谱在395 nm处具有最大的激发强度，与InGaN芯片发射的近紫外光激发相匹配。

When the thickness of ITO was 210 nm, the Alq3 based TOLED exhibited a narrowed Electroluminescent peak at 536 nm with a full width at half maximum of 22 nm, of (0.229, 0.729) and an efficiency of 1.77cd/A. 2. With Alq:DCJTB/TBADN:TBPe/Alq:C545 as white light-emitting layer, RBG tricolor TOLEDS were achieved by adjusting the thickness of ITO. We obtained the peak wavelengths at 603nm, 475nm and 538nm, CIE coordinates of (x=0.513, y=0.360),(x=0.133, y=0.201) and (x=0.335, y=0.567), FWHMs of70nm, 30nm and 48nm for red, blue and green, respectively.

以多层结构Alq：DCJTB/TBADN：TBPe/Alq：C545为白光发光层，通过调节ITO的厚度，实现了红、蓝、绿三基色发光的顶发射微腔器件；当ITO的厚度分别为240nm、180nm、215nm时，器件发光峰值为603nm、475nm、538nm时，色坐标为(X=0.513，y=0.360)、(x=0.133，y=0.201)和(x=0.335，y=0.567)，半高宽为70nm、30nm、48nm。

For example, the light emitting device 50 can be located at any location on the front surface 12f of the housing 12, such as the upper or lower sections, and the light emitting device 50 can be comprised of any light emitting structure, such as a neon tube or black-light.

例如，发光设备50可以被置于外壳12的前表面12f的任何位置，诸如上部或下部，并且发光设备50可以包括任何光线发射结构，诸如氖管或黑光。

Other phenomena, such as rocket launches, can set the stage for night-shining clouds.

其他的现象，比如火箭发射，也可以为夜光云创造条件。

Excited at 488 nm, the wave-lengths of emission photons from all samples are 300, 310, 320, 400 and 460 nm.

在蓝光（488 nm）激发下，各样品的发射光子分别出现在波长为300、310、320、400、460 nm处。

By this technique, quasi twodimensional growth of AlN was achieved under optimized condition, and more, high quality GaN layers were grown on Si (111) substrates using optimized AlN as buffer layer, and the full width at half maximum of near band edge emission at room temperature is the best reported result.

实验结果表明，经优化预沉积Al，成功获得了AlN在Si（111）衬底上的准二维生长，从而生长出高质量的以AlN作为缓冲层的Si基的GaN薄膜材料，其室温光致发光带边发射峰半高宽10nm，为所见报道室温测量结果最小值。

Finally, some conclusions drawn from the approximation that neglecting the pump re-emission and the losses of laser in other references have been analyzed and compared with the conclusions drawn from our paper.

最后和其他文献中在忽略泵光再发射项和激光损耗的近似条件下得到的结果进行了比较和分析。

Light reflection, diffusion, deflection and transmission are all phenomenons of matter's attraction, absorbtion and re-emission.

光的反射、散射、折射和透射都是物质对光的吸引、吸收和再发射现象。

This ingenious technique-which won its inventors, one of whom was Steven Chu, now America's energy secretary, a Nobel prize-works by bombarding an object with laser light at a frequency just below that which it would readily absorb and re-emit if it were stationary.

这项独特精巧的技术为它的发明者们赢得了一座诺贝尔奖，其中之一就是现任美国能源部长朱棣文。&光阱&的工作原理是用特定频率的激光轰击受试物体，这一频率的激光能够很容易地被受试物体所吸收，如果该物体处于稳定状态，激光会被重发射。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。