光刻的

The experiments of UV proximity lithography show that the corrected Fresnel diffraction model could get more accurate results than that of the Fresnel model.

同时计算机模拟和实验结果都说明尺寸越小的微结构，所能够得到的光刻深度越小，需要的曝光剂量越大；光刻所得微结构的中间会比较宽。

By applying the methods provided by the invention, the aberration sensitivity of a photoetching system can be reduced, which causes the graphs formed on the photoetching cellophane of a semiconductor substrate to obtain better critical dimension uniformity.

应用本发明所提供的方法可以减小光刻系统的像差敏感度，使形成于半导体衬底的光刻胶膜上的图形获得较佳的临界尺寸一致性。

The professional skill area of Invarium specialty is a graph the research and development of integrated science and technology, can realize design of excellent film of smooth attack by surprise and craft to optimize with the speed of industry lead, include make from film of attack by surprise, to photoetching and etched whole workmanship flow.

Invarium拿手的专业手艺区域是图形综合科技的研发，能够以业界超前的速度实现出色的光掩膜设计和工艺优化，包括从掩膜建造、到光刻和蚀刻的整个制造工艺流程。

A glass die, a micro replication characteristic of PDMS and an electroplating technology are used to make the three-dimensional microelectrode array. A precise cutting machine is used to cut the glass to form a column array and a mixture of HF and NH4F is used to produce the corresponding structure serving as the die of the micro replication of PDMS. The photoetching technology is left out and the limitation of a photoresist on the dimension of the three-dimensional structure is eliminated; therefore the longer microelectrode array can be made. The length of the microelectrode array depends on the incision depth of the glass and the electroplating technology of deep hole of the metal.

本发明利用玻璃模具、PDMS的微复制特性和电镀技术制作三维微电极阵列，用精密切割机切割玻璃形成柱状阵列，用HF和NH 4 F的混合液腐蚀出相应的结构作为PDMS微复制的模具，免去了光刻工艺，消除了光刻胶对三维结构尺寸的限制，可以制作更大长度的微电极阵列，这一长度决定于玻璃的切割深度和金属的深孔电镀技术。

Image processing and seihan mainly through the principles of optics for the required guangzhu pattern for fast taking pictures, in the light-blocking coating on the glass version 1.5 ~ 2 μm light-blocking Agent, depending on the design pattern for laser exposure, reagent, the laser exposure of light-blocking Agent cleaning off the left photoetching inter-Ridge.

影像处理与制版主要是通过光学原理将所需光柱图案进行快速拍照，在光阻玻璃版上涂布1.5 ～2μm 的光阻剂，依设计图案进行镭射曝光，用显影剂将未镭射曝光的光阻剂清洗掉留下光刻纹路。

To some extend, photolithography area controls the performance of whole semiconductor manufacturing system.

在整个半导体晶圆制造系统中，光刻区是重入次数最多的区域，光刻设备被认为是利用率最高的瓶颈设备，并在很大程度上控制着整个晶圆制造厂的系统绩效。

A dynamic scheduling method based on Kohonen neural network is proposed in this paper, to accommodate the complex changes of state in photolithography area.

本文所做的主要工作为：(1)针对光刻区的不同状态，提出了基于Kohonen神经网络的晶圆光刻流程动态调度方法，以适应生产过程中的复杂变化。

This paper,an introduction to definition and clas-sification of photoresists ,reports the application valueand potential development of various photoresists inaccordance with their characteristics.

介绍了光刻胶的含义及其分类方法，并针对每类光刻胶的特点分析了其应用价值和今后发展的潜力。

The control software of dot matrix hologram system based on this algorism can quickly find out a pixel to that the system moves in the shortest time for photolithographing so that the efficiency of making dot matrix hologram is improved effectively.

根据该算法编制的点阵全息图制做系统控制软件能令系统在完成一个像素的光刻后迅速寻找出下一个光刻过程耗时最短像素，从而有效地提高了系统的工作效率

The source and leak electrode metal layers and pixel electrode layer can be sedimented in the same or different sputtering equipments continuously, which improve the utility of sputtering equipment.

本发明通过将原来的5Mask工艺简化为3Mask工艺，共减少两次光刻过程，从而达到减少工艺步骤的目的；通过合并源漏电极光刻和像素电极光刻，使得源漏电极金属层和像素电极层可以在相同或者不同溅射设备中连续沉积，提高溅射设备的利用率。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。