光刻的

The implements vertical multilayer light interconnecting with short span, solves upward or decurrent perpendicular catenation of optical path, makes integrated structure.

短跨距实现垂直方向的多层光互连，解决了光路向上或者向下的垂直耦合，制成一体化的结构，层之间的对准误差小，连接损耗低，容易实现软光刻转印，从高聚物转印上能充分发挥软光刻三维转印的优势，易安装；材料选用光学高聚物，具有较低的光学损耗和良好的环境稳定性。

The method includes the following steps: a semiconductor basal body is provided and the insulating layer of the semiconductor basal body is plated with light-sensitive lacquer and then is exposed in light and at last is developed; etching process is carried out to make a through hole on the insulating layer; cineration process is done, the remanent light-sensitive lacquer is removed and the temperature for the cineration process is 20-50 DEG C; wet cleaning process is carried out.

该制造方法包括如下步骤：提供半导体基体，对半导体基体的绝缘层进行镀光刻胶步骤、曝光步骤、显影步骤；进行蚀刻步骤，在绝缘层上形成通孔；进行灰化步骤，将剩余的光刻胶移除，且灰化步骤的温度条件范围是20-50摄氏度；进行湿法清洗步骤。

The electroplated ferronickel shutter is suspended by a silicon spring The shutter is fabricated by the nonsilicon surface micromachining techniques. The planar coil is fabricated by high-aspect-ratio photolithography and mask-plating processes. And the silicon spring and the fiber alignment components are fabricated by the reactive ion etching and by the silicon anisotropic etching process.

电镀铁镍制作的挡光片被固定在一个硅弹簧上，该挡光片采用非硅表面微加工工艺制作，平面电感线圈利用高深宽比的光刻工艺和掩蔽电镀工艺制作，硅弹簧和光纤对准元件采用反应离子刻蚀和硅的各向异性腐蚀工艺制作。

The physical mechanism of pupil filleting to improve the photolithography resolution is discussed and several experimental results are given.

推导出光刻成像的计算机模拟公式，讨论了光瞳滤波提高光刻分辨率的物理机理，给出了几个实验结果。

While Intel might be proud of extending dry litho to 45 nm, it cannot match the dimensions from Panasonic's fab, which is running immersion tools now.

虽然Intel可能对将干式光刻沿用至45nm而感到骄傲，他们仍然赶不上松下工厂做到的尺寸---因为他们现在使用了浸入式光刻。

The method not only can be used in imprint lithography process but also in some other lithography process.

该方法时压印光刻乃至其它光刻技术中的套刻对准，都具有一定的参考意义。

The technology is resolution-independent,i.e.,it does not contain any critical photolithographic steps.

该技术的特点是它与光刻分辨率无关，即不需要高分辨率光刻技术。

DSC analysis found that the behavior of PSPI-TM film containing TiO〓of 12% was greatly different from that of the corresponding ester-typePSPI film. An intense exothermal change was found on the DSC curve. TGAanalysis indicated that the curve for weight loss of the PSPI-TM film wouldnot reach a platform until 400℃.

DSC热分析表明含TM基于转化后PI的重量折算为12 ％(w／w的Ti〓的PSPI光刻胶膜的热转变行为不同于相应的酯型PSPI光刻胶膜，在300℃附近有一个很强的放热过程；TGA分析表明这种含TM的光刻胶膜直到400℃以上才达到&失重平台&。

With the imburse of the important practical item "100nm Step-and-Scan Photolithography" of National Hi-tech Research and Development Program, for the sake of improving the nations independent development and innovation ability of strategic equipment in semiconductor chip manufacuring, the Dose Control Board in Illumination Project Control subsystem is mainly developed while the whole framework and the principle of lithography being widely researched in this project.

为了提高我国半导体芯片制造过程中关键设备的自主开发和创新能力，在国家高技术研究发展计划重大面上项目——&100nm步进扫描投影光刻机&的资助下，课题对光刻机的整体结构、光刻原理做了深入研究，重点开发了照明投影控制系统中的剂量控制板。

As the feature size decreases below the wavelength of the illumination system, the diffraction and other effects arising from resist developing and etching causes more and more distortion in the pattern transfer process. Today, new chips with very small feature size can not be manufactured without the support of RETs, OPC is one of the most important technologies in such RETs.

随着集成电路的特征尺寸逐渐下降到光刻所用的光源波长之下，由于光的衍射和光刻胶显影蚀刻等因素带来的不可避免的影响，硅片上实际印制出来的图形与设计图形不再一致，这使得如今的制造工艺已经离不开RET技术的支持，而OPC则是RET技术中的一项重要内容。

Plunder melds and run with this jewel!

掠夺melds和运行与此宝石！

My dream is to be a crazy growing tree and extend at the edge between the city and the forest.

此刻，也许正是在通往天国的路上，我体验着这白色的晕旋。