使磷化

The third approach is about the concept of an ITO direct Ohmic contact structure on GaP window layer. The direct Ohmic contact structure is performed by the deposition of an AuBe diffused thin layer and the following activation process on the surface of a Mg-doped GaP window layer. The presence of this thin AuBe diffused layer yields the Be dominant metallic surface layer and significantly reduces the barrier height between the ITO and p-GaP layer. Via the modification of contact structure, not only the brightness was significantly increased but the reliability was comparable to the conventional LED without this structure.

第三个研究为一种具有直接欧姆接触在p型磷化镓窗层与氧化铟锡界面的制程方法，於本研究中并无习知砷化镓欧姆接触层的存在，我们利用金/金铍金属藉由热退火程序，使其金铍原子在磷化镓窗层表面形成具金属特性之薄膜层，降低磷化镓与氧化铟锡接触产生之接面能障；另外，该元件在氧化铟锡直接欧姆接触於磷化镓窗层下，除亮度具明显提升外，在稍大电流(20毫安培)元件可靠度测试下，亦未有明显衰减情形发生。

Another approach in enhancing the light extraction efficiency of AlGaInP LED was accomplished using a surface roughening process. In this process, the Au(170 nm)/AuBe(260 nm)/Au(170 nm) ohmic contact layers were first deposited on the GaP window layer. After the alloy annealing process (480°C for 10 min), the Be atoms will diffuse into the GaP top layer and form non-uniform clusters. The LED samples were then immersed into a mixture 3H3PO4:1H2O2:1H2O solution for 6 min, resulting in a rough GaP surface. The luminous intensity of the AlGaInP LED can increase from 42 to 50 mcd, that is, an 18% enhancement can be achieved via the present non-photolithography surface roughening process.Keywords: LED, AlGaInP, Cu substrate, Reflector, Surface roughening

在实验的第二部份是开发磷化镓窗口层之粗化制程，我们是藉由正面金/铍欧姆接触电极之熔合制程，使铍扩散至磷化镓层，同时利用铍渗入磷化镓造成之特殊组成，可形成不均匀之蚀刻阻挡，而在磷化镓表面形成粗化，我们发现480℃、10分钟的熔合制程，加上浸泡磷化镓蚀刻溶液6分钟，可将四元发光二极体之发光亮度由42 mcd 提升到50 mcd，经由此无光罩粗化制程可将亮度提升18%，明显提升磷化铝铟镓发光二极体之外部量子效率。

The results showed that phosphating followed by coating acrylic acid can improve the adhesive strength. Increasing water temperature and the concentrations of cellulose nitrate in the buffer layer, decreasing the concentrations of R-2 resin and solvent can reduce the elongation.

结果表明，铝材表面经过磷化处理后，用丙烯酸金属涂料涂覆，可提高水转印后粘接性，转印时水温升高，过渡层配方中硝化棉增多，随R-2树脂减少，以及溶剂的减少都会使伸长率下降。

Mix with carbon dioxide especially, gas of phosphine of strong exercise of circumfluent suffocating machine is in have the aid of the loop inside grain caboodle, distributing equably quickly, achieve the goal that exterminates a pest completely, this received general application in the process of fuming or steaming-treating diseases with fumes as in moxibustion or with steam generated by boiling medicine herbs of lofty horizontal warehouse.

尤其是和二氧化碳混合，借助环流熏蒸机强行使磷化氢气体在粮堆内循环，快速均匀分布，达到完全杀灭害虫的目的，这在高大平房仓的熏蒸过程中得到了普遍的应用。

And reacting the phosphorous pentafluoride with the lithium chloride in a hydrogen fluoride to prepare the lithium hexafluoro phosphate.

b使氟化磷与氯化锂在氟化氢中发生反应，制备六氟磷酸锂。

Form ternary phosphating film, fine grain size, special structure. Can adsorb thick cathodic electrophoretic coating, make film surface equality and high-brightness.

所形成的三元系磷化膜晶粒细密，结构特殊，可吸附较厚的阴极电泳涂膜，并使涂膜表面均匀完整光亮度高。

This can make not only the outside, but also the inside of the panels be phosphated.

这样可以使钢地板的内外表面全部都得到磷化。

After titanium was phosphated with H_3PO_4 and TEP, the elements of P, C, 0, Ti and the radicles of P-O-C,-PO_3,-PO_4 were detected by X-ray photoelectron spectroscopy and the Fourier transformed infrared spectroscopy. It presents that the phosphorus had been bonded onto the titanium surface with chemical combination.

纯钛表面经过磷化处理，通过X光电子能谱和红外光谱分析可知，表面分别检测到了P、O、C、Ti元素和P-O-C、-PO_3、-PO_4等原子团，说明磷化处理可以有效的使磷元素以化学键合的方式引入表面。

As our experiments were concerned, the after growth of InGaP, GaAs was grown at a lower temperature than that for InGaP. This made the P atoms on the InGaP surface hard to desorb and greatly reduce the thickness of InGaAsP intermixing layer.

在我们的实验中，成长完磷化铟镓后，以较低的温度成长砷化镓，这将使磷化铟镓表面的磷原子较不易脱附，因此可显著的减少磷砷化铟镓四元混合层的厚度。

Inwheat intercropped with soybean not only N situation could be improved butalso P situation could be.2In intercropping,the pH of soybean rhizospherewas decreased by increasing the R-Apase activity,which could decelerate thetransforming and fixing P fertilizer.3In both monoculture and intercroppingsystem,the soil pH of rhizosphere was affected by cropping system at two Plevel which only 0.1-4mm distance from the root surface,but the effect of S-Apase activity in the rhizospher soil by cropping system was less than3mm.In effect,the rhizosphere P was really available nutrient,and applyingP to rhizosphere was effective ways to reduce the P nutrient competition.4Inwheat/soybean intercropping,the peak stage of reduction ability of roots wasthe same as that of the root growth,so that the time compensation appearedin intensity of nutrient absorption.

间套作大豆、小麦、玉米根系Apase的差异又反映出大豆利用土壤磷的潜在能力最大，而玉米最小，可见禾谷类的小麦与大豆间套后不但能改善小麦的氮素营养状况还使磷素营养也得以好转。2）间套大豆根际pH值的下降，导致磷肥施入土壤后形成〓-P的比例显著提高，转化成〓-P等难溶性磷减少，说明间套的大豆能减缓肥料磷在土壤中的转化和固定，减少磷素向无效化方向转化。3）复合群体根际土壤pH值的影响一般只发生在0.1-4mm的根际微区，而土壤磷酸酶的影响供磷与否在距根表3mm以外都无多大差异，说明根际磷才是真正有效磷，根际施磷是解决磷素竞争的有效途径。4）。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。