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位移电流

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The study indicated that current and displacement stiffness are constant in the range of allowable engineering error. There is a linear range to the magnetic force. The simplified linear model meets the requirement of controller design. The more precise control precision is, the smaller linear range is.

研究表明,在工程误差允许范围内,位移刚度和电流刚度可视为定值,即此时电磁力方程在应用上存在较大的线性区间,因此简化的线性化模型完全可满足控制器设计的需要,且线性区间随着控制精度提高而减小。

The approximate analytic solution of displacement response which is excited by harmonic alternating current can be ...

考虑到问题的数学模型中含有小参数,周期交变电流激励下的位移响应的近似解析解可以用摄动解法得到。

The characteristics of pentacene/perylene derivatives based organic solar cells are investigated in this thesis Donor and acceptor layers are pentacene and N N'-dioctyl-3 4 9 10-perylenetetracarboxylic diimide (PTCDI-2~13C) respectively Twelve organic solar cells with pentacene/PTCDI-2~13C heterojunctions were fabricated to study the influence of various alkylic perylene derivatives on the power conversion efficiency Under the sunlight simulator with AM1 5G filter and 100 mW/cm2 the solar cell of pentacene/PTCDI-7C heterojunction with cathode of Ag/Al bilayer has the best performance among the devices with pentacene/PTCDI-2~13C heterojunctions In PL spectrum analyses the pentacene/PTCDI-7C film had lower recombination rate than the other pentacene/PTCDI-2~13C films; therefore more excitons could reach the P/N junction and enhance short-circuit current Furthermore the PTCDI-7C film grown on the surface of penatcene was more matched than other PTCDI films analyzed by the PL peak shifts of 10 nm and 45 nm thick PTCDI-2~13C and images of atomic force microscope More lattice match between the films of pentacene and PTCDI resulted in fewer defects in P/N junction and more carries can reach electrodes Accordingly the power conversion efficiency approach 2% was obtained from the solar cell with the active layer of pentacene/PTCDI-7C

本研究探讨以五环素/骈苯衍生物异质接面太阳能电池之特性,利用pentacene作为电子施体有机材料,PTCDI -2C~13C作为电子受体有机材料,制作出异质接面为pentacene/ PTCDI-2C ~13C等12种有机太阳能电池,比较不同碳数的骈苯衍生物对於有机太阳能电池之光电转换效率之影响。在AM1 5G、100 mW/cm2的模拟太阳光下,以pentacene/PTCDI-7C异质接面太阳能电池具有短路电流9 882 mA/cm2、开路电压0 376 V、填充因数0 523及光电转换效率达1 945%,皆比其他pentacene/PTCDI-2C ~13C异质接面太阳能电池来的大。由薄膜分析可知PTCDI-7C在这12种太阳能电池中具有较低的电子电洞复合发光效率,可以让较多激子到达异质接面进行电荷分离,减少电子电洞对复合发光的机率;此外,由光激发萤光光谱之峰值位移配合原子力显微镜表面结构图,可以得知当PTCDI-7C成长在pentacene上时会顺著pentacene的结构成长薄膜,故较无缺陷产生在P/N接面处;而在其他结构下则无此现象产生,致使在pentacene/PTCDI-7C薄膜中的载子有较大的机会可以移动至电极,使光电流提高,进而使光电转换效率提高。

This simulation achieves a stable configuration evolution from limiter to lower single-null divertor by using the vertical and horizontal displacement feedback and the current feedback.

数值放电模拟还利用基本的位移控制和等离子体电流控制系统实现了从孔栏位形到下单零偏滤器位形的稳定演变。

The magnetic induction intensity and its distribution of the impulsive magnetic field in the coil-workpiece system are studied.

在毛坯运动的情况下,本文引入等效位移的概念提出了放电回路参数及放电电流的近似计算方法。

Including setting up system platform and measuring structure of the rigidity of pretension spring of the solenoid valve, designing the dynamic electric-current driver on the basis of power sink principal, variable pulse width modulation of voltage boosting and inversion technology, realizing the intelligence controlover the control parameters, satisfying the diversity requirement towards the dynamic feature experiment of the solenoid valve; furthermore, testing system software is developed, and filtering is conducted over the signals of armature displacement response and driving current educed from the experiment using wavelet analysis technology.

构建了系统台架和电磁阀预紧弹簧刚度测量机构,设计了基于功率吸收原理和可变脉宽升压逆变技术的电磁阀动态电流驱动器,实现了对驱动器参数的智能控制,满足了对电磁阀动态特性试验的多样性要求。开发了测试系统软件,提出了基于小波分析的方法,对试验所得衔铁位移响应信号和驱动电流信号进行了滤波。

For the four laterals simply supported plate, the transverse deflection of plate is expanded over the modal shapes, the electroelastic model with self-sensing actuators plate is given, and the current is considered as output variable of measurement equation. Generalized modal coordinates being state variables, LQG and H∞control is proceeded using the state space equation.

将板的横向位移按模态展开,对配置压电自感作动器的薄板建立了模型,给出以广义模态坐标为状态变量的状态方程和以传感电流为输出的观测方程,在此基础上,对系统进行了LQG控制和H∞控制。

This invention relates to a cascade multiple zero-type matrix rectifier, in which, a general input filter is connected between a net and a step-down transformer to get sine-wave input current, the step-down transformer includes n secondary windings with Yn spliced mid lines, the phase of all the three-phase windings is the same, the rectifier array is arrayed in a 1 row x n lines by n zero-matrix rectifier units, each line of which is connected with the seconday winding of the step-down transfornmer, and the outputs of the rectifier units are serial orderly to form a DC output, the general controller is responsible for regulating work of the entire system and connected with the branch controllers by signal cables to control the work of the rectifier units in the array.

本发明涉及一种级联多重化零式矩阵整流器,总输入滤波器连接在电网与降压变压器之间,滤波得到正弦波形的输入电流,降压变压器有n个Yn接带中性线的次级绕组,所有三相绕组相位相同,整流器阵列由n个零式矩阵整流器单元排成1列×n行的阵列,阵列中每一行与降压变压器的一个次级绕组对应连接,阵列中整流器单元的输出依次串联,形成一路直流输出,总控制器负责控制调节整个系统的工作,并通过信号电缆与各个分控制器联络,控制整流器阵列中每个整流器单元的工作。本发明由低压小功率的变换器串联得到幅值可调的高压直流电源,同时在电网侧得到位移为零的输入电流,具有网侧四象限运行能力等优点,适用于中高压直流供电领域。

Mathematics model of dielectric under uniform electric field is built up, and total current is separated into three parts such as conductive current, instantaneous current and relaxation polarization current, then polarization and depolarization of linear and non-linear dielectric are simulated under step excitation, the results show that nonlinearity of non-linear conductivity is reflected by measuring surface potential attenuation during the process of self-discharge of non-linear dielectric.

论文首先对处于均匀电场下的电介质进行电路建模,把电介质的总电流分为电导电流、位移极化电流和松弛极化电流三部分来分析,然后以此为基础利用Matlab软件中的Simulink平台对直流阶跃激励下线性和非线性绝缘介质的极化和退极化过程进行了仿真,结果表明可以通过测试非线性绝缘介质自放电过程的表面电位衰减来反映其非线性电导的非线性程度信息。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现,由於控制闸极耦合电容的影响,加上电位移向量在半导体-氧化层界面连续的观念,拥有较高介电常数的锗反而得到较小的等效电场,决定了穿隧电流反倒是不如矽基板;在F-N穿隧写入的模拟中,即便锗基板拥有较大的总耦合电容,使得在浮闸的耦合电压大於矽基板,但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素,得到的结果仍旧是矽基板的写入速度高於锗基板;在F-N抹除的模拟中,运用与F-N写入相同的数学模型,仍旧看见在锗基板上未能得到速度上的改善,同时用数学的计算展示了合理的解释。

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