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介电常数

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The composite was prepared with BaTiO_3,epoxy resin CYD128,4,4-diaminodiphenyl sulphone and nitrile-butadiene rubber.

以BaTiO3、CYD128型环氧树脂、丁腈橡胶和4,4-二氨基二苯基砜为原料,采用共混法制备了具有高介电常数和低介电损耗性能的BaTiO3/环氧复合材料。

A kind of BaTiO3/epoxy composite material with high dielectric constant and low dielectric dissipation was prepared by mixing method. The composite was prepared with BaTiO3, epoxy resin CYD128, 4, 4-diaminodiphenyl sulphone and nitrile-butadiene rubber.

以BaTiO3、CYD128型环氧树脂、丁腈橡胶和4,4-二氨基二苯基砜为原料,采用共混法制备了具有高介电常数和低介电损耗性能的BaTiO3/环氧复合材料。

It was found that the dielectric constant and dielectric loss of unpoled samples is higher that those of poled samples.

结果表明:极化后的介电常数和介电损耗低于极化前。

The dielectric constant and dielectric loss of unpoled and poled samples increased with the increase content of BKT.

极化前和极化后的介电常数和介电损耗随BKT含量的增加而增加。

The material compositions are selected from Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3 family and they are used as the four layers in the new FG piezoelectric actuator.The piezoelectric constants and dielectric constants of the materials are gradated oppositely in the thickness direction, because this special structure of the FG piezoelectric actuator has an advantage over the traditional actuators in internal stress distribution.

这种新型功能梯度驱动器由4种基于Pb(Ni1/3Nb2/3)O3-PbZrO3-PbTiO3系列的材料复合而成,且4层材料的压电常数和介电常数在厚度方向上的梯度变化相反,这种梯度结构能使驱动器结构内部的应力分布优于传统弯曲驱动器。

It was found that sialon thin films deposited in ar and n2 atmosphere have higher relative dielectric constant, dielectric dissipation and leakage current density than those deposited in ar and o2 atmosphere.

发现在ar/n2气氛中沉积的sialon薄膜具有较高的介电常数,漏电流密度和介电损耗也稍大。

The results indicated that the dopings of appropriate amount of rare earth ions improved the dielectric constants, where the optimal doping concentratrations of Er3+ and Eu3+ ions were around 4.5% and 5.7%, respectively.

结果表明,稀土离子的适量掺杂使BST薄膜介电常数有所提高,其中, Er3+和Eu3+的最佳掺杂浓度分别为4.5%及5.7%左右时,介电常数值达到最高。

An oxide coating is formed on the surface of the aluminum powder after the surface passivation treatment, so as to efficiently avoid the formation of leakage conductance due to mutual contact between eclectically-conducting additives and thereby to reduce the dielectric loss of the material. The composite material has high dielectric constant, low density and good flexibility. The production method of the composite material has the advantages of simple and controllable process, low hot-pressing temperature, energy conservation and environmental protection.

铝粉经过钝化处理,表面形成一层氧化物包覆层,有效地避免了导电添料因相互接触而形成漏电导,降低了材料的介电损耗;复合材料介电常数高,密度低,加工简单,并具有良好的柔韧性;复合材料的制备方法工艺易控简单、热压温度低、节能环保。

In this study, we demonstrate a programmable-erasable MIS capacitor with a single high-k Hf3N2O5 dielectric layer for many applications such as volatile DRAM and non-volatile MONOS type memories.

本文将探讨使用高介电常数氮氧化铪为介电层的可写入抹除金属-绝缘层-矽结构电容,其可应用在记忆体上例如:动态随取记忆体与快闪记忆体。

In this thesis, there are two types of varactors used in the VCO: one is the Philips' BB135 p-n junction capacitor; the other is Al/HfO2/Si capacitor with HfO2 dielectric. Because the dielectric constant of HfO2 is larger than that of SiO2, the capacitance of Al/HfO2/Si capacitor will be larger than that of MOS capacitor with the same thickness and area. Therefore, there will be larger unit voltage for adjusting the ratio of the capacitance values of the capacitors.

在本论文实验的VCO电路中之可变电容有2种:一种是飞利浦厂商所提供型号为BB135之P-N接面电容;第二种是自制的Al/HfO2/Si电容是使用二氧化铪(HfO2)来做为电容的介电材料,因为HfO2介电常数比氧化矽(SiO2)大,目的是要在相同厚度以及面积下,就可以有较大的电容值,希望能藉此有较大的单位电压改变电容值的比值。

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