介电常数

The important parameters for the wave absorption effects are electromagnetic loss factor, complex dielectric constant , complex magnetic conductivity.

评价吸波效能的主要参数是损耗因子、复介电常数、复磁导率。

For the first time, the complex permittivities of tumour cell sap and blood of rats undergone ECT were measured, which could be regarded as a reference in the study of bioelectromagnetic effect and a preparative work in clinical examination of the characteristic of tissues.

本文首次对电脉冲处理下的肿瘤细胞悬液、小鼠血液的复介电常数进行了测量，对电磁场生物效应的研究具有一定参考价值，对组织介质特性在临床上的检测有一定前瞻性的意义。

In the real electrical double layer of particles, dielectric constant s can be nonuniform.

在实际的粒子双电层中，介电常数ε应该是有变化的。

The electric parameters of the sample such as dielectric constant, spontaneous polarization magnitude and orientation play an important role in the image contrast.

样品的电学性能参数如介电常数、自发极化强度和取向等的改变对电声像衬度的来源起着决定性作用，对电声成像理论提出了新的解释。

In Chapter 2,the polarization and loss mechanism of fruit in the alternating current arestudied,and dielectric parameters such as dielectric constant、equivalent impedance andequivalent capacitance are put forward to analyze the interaction between fruit internalquality and alternating current.

第二章 研究了水果生物介质在交变电场作用下的极化和损耗机制，提出了复介电常数、等效阻抗及等效电容几个相互联系又有所区别的电特性参数是研究交变电场与水果相互作用的基本参数。

Fourth, presents the main factors which affect the dielectric properties after poling and piezoelectric coefficient are the modifiability of the displacement between cation and anion center in oxygen-octahedral structure and the existence of MPB.

第四，提出本系统极化后介电常数及压电系数表现主要影响因素为氧八面体中阴阳离子偏移量的改变量及 MPB之存在。

To improve the dielectric performance of the syntactic foam ,a kind of a low density dielectric materisl with high dielectric comstant.

为改善复合泡沫塑料的介电性能，采用金属氧化物粒子填充改性双马来酰亚胺空芯玻璃微球复合泡沫塑料得到了高介电常数、低介质损耗因数、低密度、力学性能良好的电介质材料。

The phenomenon demonstrates that the perovskite is a stable state with low free energy. The (1-x) PMN- x PT system has a morphotropic phase boundary separating the tetragonal and rhombohedral phases. The MPB is located in the vicinity of x = 33%. The PMN-PT ceramics near the phase boundary possesses excellent piezoelectric performance. d33 can reach to 540 pC/N. kt and kp can be up to 0.45 and 0.62, respectively.

在准同型相界附近，PMN-PT陶瓷材料具有较好的压电性能，d33可达540 pC/N，kt、kp分别可达0.45和0.62；在准同型相界附近，极化后的（1-x）PMN-xPT陶瓷材料（0.22 x 0.35）的介电常数在温度诱导FR-FT相变过程中发生突变；PMN-PT陶瓷材料在FR-FT相变过程中呈现出一个热释电峰，反应了自发极化在相变过程中发生了非线性的变化。

The leakage current density of OSG is investigated by I-V measure. The dielectric constant, hysteresis phenomenon, capacitance-voltage curve shift and stretch-out of OSG is investigated by C-V measure.

利用电容-电压量测探讨薄膜的介电常数、C-V曲线的偏移、扭曲(stretch-out)、C-V磁滞的现象以及利用电-电压量测探讨薄膜的漏电流密度。

On CHE programming, the higher coupling ratio of control-gate makes the higher electrical field across TOX in Si than Ge. Also because of the continuity of displacement vector, the higher permittivity of Ge would cause the lower electrical field at interface. We get the higher gate current in Si than Ge. On CFN programming, the higher CT in Ge would show the higher electrical field across TOX. However, the parameters of F-N tunneling are calculated and showing the gate current in Si is larger than Ge. On the same mechanism of F-N tunneling erasing, the parameters also show the higher electrical filed of Si would cause the higher erasing speed. The continuity of displacement vector also explains the higher electrical field at interface for F-N tunneling programming/erasing.

从通道热电子穿隧写入的模拟结果发现，由於控制闸极耦合电容的影响，加上电位移向量在半导体-氧化层界面连续的观念，拥有较高介电常数的锗反而得到较小的等效电场，决定了穿隧电流反倒是不如矽基板；在F-N穿隧写入的模拟中，即便锗基板拥有较大的总耦合电容，使得在浮闸的耦合电压大於矽基板，但仍旧是半导体-氧化层界面的电场扮演了穿隧电流的决定性因素，得到的结果仍旧是矽基板的写入速度高於锗基板；在F-N抹除的模拟中，运用与F-N写入相同的数学模型，仍旧看见在锗基板上未能得到速度上的改善，同时用数学的计算展示了合理的解释。

But we don't care about Battlegrounds.

但我们并不在乎沙场中的显露。

Ah! don't mention it, the butcher's shop is a horror.

啊！不用提了。提到肉，真是糟透了。