介晶相

We also study the relation between the dielectric constant and lattice distortion of the PT tetragonal and cubic phase region.

我们还研究了PT四方相区和立方相区介电常数与晶格畸变的关系。

The work of this paper is mainly to deeply study the relation between the dielectric constant and lattice distortion of PZT and PT, based on their thermodynamic theory.

本文的工作是在PT和PZT热力学理论基础上从结构相变的角度深入地研究PT和PZT介电常数与晶格畸变的关系。

The easy generation of middle-and-steady-state and special phase under the hydrothermal condition, enable to form matter which is hard to form in low melting point, high-pressure steam and in the melting state, and enable to the crystallization generation under hydrothermal condition, such as the high-temperature thermal decomposition.

在水热与溶剂热条件下中间态、介稳态以及特殊物相易于生成，能够使低熔点、高蒸气压且不能在融体中生成的物质，及高温分解相等在水热与溶剂热条件下晶化生成。

(1-x)BiScO3-xPbTiO3 ceramics exhibits excellent dielectric and piezoelectric properties in the vicinity of the morphotropic phase boundary (x=64.0% mol fraction PbTiO3), which separates the rhombohedral phase from tetragonal phase.

(1-x)BiScO3-xPbTiO3陶瓷在x=64.0%附近存在一个从菱方晶系过渡到四方晶系的准同型相界，在此相界附近材料能获得优良的介电和压电性能。

BiScO3-xPbTiO3 ceramics exhibits excellent dielectric and piezoelectric properties in the vicinity of the morphotropic phase boundary (x=64.0% mol fraction PbTiO3), which separates the rhombohedral phase from tetragonal phase.

(1-x)BiScO3-xPbTiO3陶瓷在x=64.0％附近存在一个从菱方晶系过渡到四方晶系的准同型相界，在此相界附近材料能获得优良的介电和压电性能。

Dielectric, piezoelectric and electrmechanical coupling properties of PZT and PSZT systems at high Zr content region were studied. The feature of high Kt and low Kp of PZT-based materials near F-AF phase boundary was exploited and examined, and electromachanical coupling anisotropy Kt/Kp is higher than that at the morphotropic phase boundary , Kt≥0.40, Kt/Kp≥3. 0. This phenomenon can be realized by electric field -induced AF-F phase transition and explained by coupling effect of two-sublattice in antiferroelectric unit cell.

研究了PZT和PSZT两个系统在高锆区的介电、压电和机电耦合等性能，首次发现了PZT基材料在铁电-反铁电相界处具有高Kt和低Kp的性质，机电耦合各向异性Kt/Kp也比准同型相界要高，Kt≥0.40，Kt/Kp≥3.0，并把这一现象归因于电场诱导AF-F相变和反铁电双子晶格间的强耦合作用。

The experimental results also showed that the peritectic temperature of ξ phase is in a range of 500℃-520℃.

同时，本实验结果也显示ζ相的包晶反应温度约介於500-520℃之间。

We comprehensively investigate and discuss the relation in the tetragonal,rhombohedral and coexistence phase region of PZT.

我们对PZT四方相区、三角相区和混合相区介电常数与晶格畸变的关系进行了全面研究和探讨。

Thus, the relative error between the theoretical value applied to the rhombohedral phase region and the experimental values must be more error in this region.

根据这两个方程我们得出了PT四方相区介电常数与晶格畸变之间的方程；还研究了PT立方相区介电常数、温度与晶格畸变之间的简单关系。

The SBT thin films with STO seeded layer on MFIS structure also appear prefer (115),(006) orientation and good crystallinity. The seeded layer of STO effectively resists the diffusion of Bi into Ir bottom electrode on MIM structure. The remanent polarization and leakage current density of Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layers are significantly improved. In MFIS structure, the Sr0.8Bi2.6Ta2O9+x thin films with STO seeded layer are improved memory window and lead to lower leakage current at low voltage.

在具有STO晶种层基材上沉积之钽酸锶铋铁电薄膜於700℃淬火后，无论在MIM和MFIS结构上皆可得完美(115)方向之SBT结晶相，而STO的种晶层在MIM结构中确实可以有效的阻止铋原子扩散进入底电极，而降低漏电流，在MFIS结构中虽然得到一较小极化值，但由於铁电层所分配到的电场值反而因介电常数值降低而增加，因而得到较大的记忆窗。

They weren't aggressive, but I yelled and threw a rock in their direction to get them off the trail and away from me, just in case.

他们没有侵略性，但我大喊，并在他们的方向扔石头让他们过的线索，远离我，以防万一。

In slot 2 in your bag put wrapping paper, quantity does not matter in this case.

在你的书包里槽2把包装纸、数量无关紧要。