二极管对

The reflection spectra of Al0.5Ga0.5As-AlAs distributed Bragg reflector at different incident angle are calculated by transfer matrix method.

采用传输矩阵法对Al0.5Ga0.5As-AlAs材料的发光二极管分布布拉格反射器进行入射角的反射光谱研究，计算发现反射偏振光p和s随入射角的增大呈"V"形变化，在49.8 处有最小反射值。

The reflection spectra of Al0.5Ga0.5As-AlAs distributed Bragg reflector at different incident angle are calculated by transfer matrix method. The reflection spectra curve of p-polarized and s-polarized plane waves vary with a 'V' shape with the rise of the incident angle and the lowest reflectivity is at 49.8°.

采用传输矩阵法对Al0.5Ga0.5As-AlAs材料的发光二极管分布布拉格反射器进行入射角的反射光谱研究，计算发现反射偏振光p和s随入射角的增大呈"V"形变化，在49.8°处有最小反射值。

The study results shows that the breakover phenomenon in the Ⅰ-Ⅴ characteristics of SITH is due to the continual decreasing of potential and the continual increasing of anode P-N junction bias, accordingly the high injection formed in the drifting region, which leads to the hole concentration of space charge region near the gate much higher than the ionized acceptor concentration, and the space charge region reduced and can not stand higher voltage.

论文总结得到的SITH模型一即"SIT控制的二极管"模型—对分析该器件的工作机制显示了良好的作用。

In order to explain the phenomena of negative capacitance in light-emitting diodes, we presented a new model based upon the local strong recombination in active region. And we deduced the analytic expression of NC from continuity equation.

为解释发光二极管中的负电容现象，提出了在有源区与局部强复合效应有关的新模型，首次通过对载流子连续性方程的求解导出了NC的解析表达式。

By using Monte-Carlo simulation and empirical equation, the sensitivity of a CdWO4-photodiode detector under the radiation of 9MeV LINAC, 6MeV LINAC and 60Co source was estimated and compared with the measurement data.

分析了由CdWO4晶体耦合光电二极管所组成的探测器单元探测灵敏度的决定因素，采用蒙－卡计算、经验估算等对其在高能加速器和60Co源下的探测灵敏度进行了估算，并和测量值进行比较。

In this thesis several problem in the numerical simulation of intense relativistic pulse diode are analyzed and studied in detail.

本论文对强流相对论脉冲二极管数值模拟中的若干问题进行了深入的分析和研究。

In the paper,the interaction of an intense relativistic electron beam with the background gas in the high power microwave diode is studied.

利用数值计算与粒子模拟两种方法，结合实际的实验数据，对高功率微波二极管中相对论电子束与背景气体相互作用碰撞产生的等离子体密度进行了研究。

Electron/hole pair for every 3.62 eV of energy lost in the silicon, which is the input signal.

典型的探测器是Si-PIN光电二极管探测器：X射线与硅作用，使其平均每消耗3.62 eV能量便产生一个电子/空穴对，即为输入信号。

This paper analyses the physical characteristic of MOV and gives out its mathematical model by making it equivalent to inductance, resistance and diode three parts.

对金属氧化物变阻器的物理特性进行了分析，并完成了MOV元件的数学建模，将其等效为电感、电阻、二极管三部分。

The paper brought forward and excogitate a technique of dynamic compensating with which can greatly enhance the adaptive capability of temperature of the APD. In the research of usage, with the help of Ningbo Zhengdong photoelectricity CO.

论文详细分析了影响系统稳定性的各种因素，尤其是雪崩光电二极管的温飘特性，提出并研发了一种动态跟踪补偿技术，能够大大提高APD 对环境温度的适应能力。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷