二极管

SBD is theuse of metal and semiconductor contact with the formation of metal- semiconductor barrier made of, so it is a thermal emission diode,with the manufacturing process of continuous improvement and theemergence of special materials, Schottky barrier gate andhigh-speed FET Large-scale integrated circuit andultra-large-scale integrated circuits wide field ofapplications, Schottky diodes on the application of more and morewidely.

SBD是利用金属与半导体接触形成的金属-半导体势垒制成的，因此，它是一种热电子发射二极管，随着制造工艺的不断完善及特殊材料的出现，肖特基势垒栅FET及其高速大规模集成电路和超大规模集成电路领域的广泛应用，肖特基二极管的应用范围也越来越广。

In this thesis, Based on the advantages of diode-pumped solid-state laser in Chapter 1, the development of diode-pumped solid-state laser is introduced. The trends of DPSSL are pointed out, the wide application fields ,as well as the bright market future of high power DPSSL are also summarized. In the Chapter 2 , all kinds of solid-state laser gain materials are introduced in detail. In the Chapter 3 , the theory on the mode-matching of the pump beam and the cavity mode is analyzed in detail based on the basic theory and work principle of LD-pumped all-solid-state laser.

本论文第一章从二极管泵浦固体激光器的优势出发，介绍了二极管泵浦固体激光器的发展，指出了DPSSL的发展方向，概括介绍了大功率DPSSL的诸多应用领域和广阔的市场前景；第二章对固体激光增益材料作了详细的介绍；第三章基于LD泵浦固体激光器的基本理论和工作原理，从理论上详细分析了LD端面泵浦激光器中泵浦光与腔模的匹配问题。

In the invention, a plurality of high power LED chips are integrated on a laminated base plate of aluminum nitride AIN and low temperature co-fired ceramic LTCC. The heat dissipating capability of the high power LED chips is improved from the levels of the underlay, a bond coat and the base plate.

本发明采用多颗大功率发光二极管LED芯片集成在氮化铝AlN和低温共烧陶瓷LTCC叠层基板上，从衬底、粘结层和基板三个层次上提高大功率发光二极管LED芯片的散热能力。

A novel hybrid diode-clamp cascade multilevel converter is presented in this paper. The new concept of the converter is based on connection of multiple diode-clamp converter modules with different dc bus voltages. Normally, the voltage blocking capability of faster devices such as IGBT and the switching speed of high voltage devices like GTO are found to be limited.

该文在研究传统的级联多电平、传统混合级联多电平以及二级管钳位级联多电平变换器的基础上提出了一种新型的混合二极管钳位级联多电平变换器，这种新型变换器是将具有不同直流母线电压的多个二极管钳位多电平变换器进行级联，输出电压是将这些变换器的输出电压进行矢量相加而合成的。

Its electron beam fluence is three times more than that of the old diode system.

为&闪光二号&加速器研制了新的二极管系统，其电子束能注量比原二极管系统大3倍多。

Its possible causes are: the transistor operating point is not the choice of a good, high-voltage filter capacitor leakage or damage, leakage heat regulator diode, rectifier diode damage.

其可能原因有：晶体管工作点未选择好，高压滤波电容漏电或损坏，稳压二极管发热漏电，整流二极管损坏等。

To obtain lower voltage (400kV) and higher current density (143A.cm-2) for the optical aperture (φ12cm) and required laser output energy (40J) the diode separator structure in the vacuum side, electrode form, length of drift space, Hibachi open area, etc. are considered.

针对低电压(400kV)和高电流密度(143Acm－2)，重点考虑了二极管真空绝缘界面、电极结构、漂移区长度和主膜支撑等问题并介绍了实验结果：二极管电压在 450 kV以上仍能稳定工作，电流上升前沿约20ns，电子束总束能4.2kJ以上。

Double series PIN diodes operates at a hold-off voltage of 4.2 kV, and the dV/dt is promoted from 1.7 kV/ns to 2.3 kV/ns.

对于这种特殊的硅二极管结构，在它上面加一个很快的冲击电压，当冲击电压高于二极管的直流击穿电压时，二极管不会立刻击穿，会有几 ns的延迟。

Stacked PIN diodes in parallel and series operate at a hold-off voltage of 8.0 kV,and the dV/dt is promoted from 2.4 kV/ns to 3.2 kV/ns. Delayed breakdown device ; PIN diode ; Delayed breakdown

因此在输入脉冲 dV/dt很快的情况下，二极管会产生很高的过压，这时空间电荷区的电场强度远远大于雪崩击穿的临界场强，电子和空穴的电离率非常高，导致二极管在很短的时间内击穿，这个现象被

For example, light emitting diodes and lasers using InGaN/GaN and AlGaN/GaN heterostructures have already been demonstrated.

例如应用于InGaN/GaN和AlGaN/GaN异质结的发光二极管和激光二极管已经开发成功。

In the negative and interrogative forms, of course, this is identical to the non-emphatic forms.

。但是，在否定句或疑问句里，这种带有"do"的方法表达的效果却没有什么强调的意思。

Go down on one's knees;kneel down

屈膝跪下。。。下跪祈祷