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The proposed data driver IC was made by Wuxi CSMC-HJ Company Limited. The testing results of the circuits, the high voltage CMOS and the whole chip proved that the proposed data driver IC was right and reliable. The PDP driver system which was given in Chapter 1 illumes the screen made by Nanjing Electronic Devices Institute with the designed data driver IC in this paper. This result more proves the data driver IC can be applied and industrialized.

本论文所设计的PDP选址芯片在无锡华晶上华半导体有限公司进行了三次流水,该芯片的电路功能、HV-CMOS器件及整个芯片的大量测试分析结果都说明了所设计的PDP选址驱动芯片的正确性和可靠性,点屏测试的良好结果则进一步证明了该芯片实用性,它将具有良好的产业化前景。

By employing the Jordan-Wigner transformation and a modified mean field method, we are able to determine its ground-state quantum phase diagram approximately. The chapter IV is the main part of this Thesis. It contains the main innovations in our work. We propose and study in detail a S=1 Ising chain with the interplay of single-ion anisotropy and dimerization. The main results and innovations are the following: We show that the total number of the zero-component of spins at each site is a conserved quantity. This quantity, which may intuitively called as hole's quantum number, is hidden in the system. We show further that the hole's number in the ground-state is zero; By using the Jordan-Wigner transformation, we map this model onto a series of subsystems described by the spin 1/2 dimerized transverse Ising model. We solve the subsystems exactly, by presenting the exact wave functions and spectra;We show that this system exhibits a series of quantum phase transitions by varying the dimerization strength. We determine the quantum critical points exactly. We also show that the criticality is the same as that of the uniform S = 1/2 transverse Ising chain.

第四章是本文的重点及主要创新内容,我们具体研究了自旋为1的在横向单离子晶格场中的一维二聚化Ising链,我们得到的主要结果和创新之处是:(1)证明了这一模型具有一种隐藏的对称性,即自旋第三分量为零的格点数目是一个守恒量,并证明基态出现在空穴数目为零的子空间中;(2)利用Jordan-Wigner 变换将此模型变换到一系列自旋为1/2的横磁场中的二聚化Ising 模型,并给出了相应严格的波函数及能谱;(3)我们发现系统的基态随着二聚化强度的变化将呈现出一系列量子相变,我们得到了量子临界点的精确位置,并证明其临界性质与自旋为1/2的横磁场中的均匀Ising 链中的临界行为属于同一普适类。

Ming of the people will be hurt by the new technique meridians and their patients are classified as prohibited, and Wong uninvited people together and start practicing a combination of new Ninjutsu; On the other hand, is working with卡卡西evening classes three Rihong She went to members of a secret lair pills, and pills are also big for the upcoming reincarnation of preparation and positive, on the other hand, will be used to send crystal lodged in the hands of Honglian卡卡西and others with the fighting, and one of the moisten罗吏Sophie is not afraid of child Quan fields will be field injured child.

鸣人的新术因会伤及自己的经脉而被列为禁术,而鸣人开始与自来也一起修炼新的组合忍术;另一方面,卡卡西正与夕日红班的三名成员秘密前往大蛇丸的巢穴,而大蛇丸也正在为即将到来的转生而积极准备着,另一方面,会使用晶遁的红莲派出手下与卡卡西等人战斗,其中的濡罗吏并不怕雏田的柔拳,将雏田打伤。

And the strengthening mechanism can be described as follows: WC cemented carbides have interlaced short-clubbed grain, and in the bend strength test, the microcrack generates at WC/WC grain boundary, and may be blocked by interlaced fine-clubbed grains during extending, which induce the intergranular pulling-out. Due to the pulling-out mechanism, fracture-extend energy is greatly expended, thus bend strength is increased. The wear mechanism is groove wear and spalling of WC grains.

热机械合金化合成的WC-Co硬质合金比传统方法制备的同类WC合金具有更高的强度,其机理是:热机械合金化合成的WC合金具有交替排列的短棒状组织,在三点弯曲试验中,微裂纹萌生于WC/WC晶界位置,受到交错排列的短棒状晶粒的阻碍,裂纹扩展以短棒状晶粒的拔出方式进行,极大地消耗了裂纹扩展的能量,从而提高了弯曲强度;合成试样的摩擦磨损过程以犁沟磨损和WC颗粒的剥落为主要特征。

In this dissertation we used different kinds of design to do the experiments, and compared the experiment results with theoretical results. Finally, a 192μm thick PPLN crystal sandwiched between two CLN crystals gave a single (quasi-single) mode in the quasi-phase matched TPG process.

在论文中我们针对不同的设计,进行实验和理论的交互比对,并使用不同厚度的周期性晶格反转铌酸锂反覆试验,最后以190微米的厚度配合上述的第三个方法,达到接近单模输出的准相位匹配的兆赫波参数产生。

The α-BaB〓O〓 crystal is colorless, transparent and without cracking. The cracking problem has been overcome by a special growth procedure. The dislocation density, crystallization morphology and growth habit of α-BaB〓O〓 crystal have been systematically studied by chemical etching method, X-ray laue orientation of synchrotron radiation, double-crystal diffraction topography. The growth striation and irregular dislocation consist of the primary defect in α-BaB〓O〓 crystal. The convex solid-liquid interface is stable during the whole growth process.

在国际上首次采用提拉法生长出φ50×40mm〓的α-BaB〓O〓晶体,生长方向为[0001],晶体完整、无色透明;提出了三种固相反应的原料制备方法,并保证B〓O〓过量1mol%;采用独特的生长装置和程序有效地解决了α-BaB〓O〓晶体易开裂的问题;首先采用化学腐蚀法、白光X射线衍射术、X射线双晶衍射形貌术等研究了α-BaB〓O〓晶体的位错密度;首次采用同步辐射X射线劳埃定向术研究了α-BaB〓O〓晶体的结晶形态及生长习性;结果发现α-BaB〓O〓晶体的缺陷以位错为主,部分α-BaB〓O〓晶体中存在生长条纹。

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